Abstract: The photomask of the present invention comprises a transparent substrate, a pattern, and a calcium fluoride film. The transparent substrate has a first main surface and a second main surface opposite to the first main surface and is transparent to the exposed light. The pattern is formed on the first main surface of the transparent substrate and has at least one of a opaque film, a translucent film, and a phase control film. The opaque film does not transmit the exposed light. The translucent film partly transmits the exposed light. Further, the phase control film serves to control the phase of the exposed light. The calcium fluoride film is formed on the second main surface of the transparent substrate and performs the function of an antireflection coating for suppressing the re-reflection of light on the back surface of the transparent substrate.

Abstract: An exposure mask is used for transcribing a desired pattern on a resist on a wafer in a photolithography step. This exposure mask is formed by the arrangement of transcribed pattern film formed in a desired pattern on the transparent substrate. In order to decrease background light, a dummy pattern film formed in a dummy pattern is arranged on the transparent substrate together with the transcribed pattern film. The dummy pattern is designed in such a manner that the dummy pattern is not transcribed on the resist under the exposure condition required for transcribing the desired pattern on the resist in a desired size. Besides, the dummy pattern film is arranged from the transcribed pattern film in a predetermined distance so that the intensity distribution of light which passes through the transcribed pattern film.

Abstract: A method for determining an optical constant of an bottom antireflective layer formed between a resist film and an underlying substrate in an optical lithography process in a process for fabricating a semiconductor device, the resist film having an absorption coefficient &agr;′ of 1.5 &mgr;m−1 to 3.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: The photomask of the present invention comprises a transparent substrate, a pattern, and a calcium fluoride film. The transparent substrate has a first main surface and a second main surface opposite to the first main surface and is transparent to the exposed light. The pattern is formed on the first main surface of the transparent substrate and has at least one of a opaque film, a translucent film, and a phase control film. The opaque film does not transmit the exposed light. The translucent film partly transmits the exposed light. Further, the phase control film serves to control the phase of the exposed light. The calcium fluoride film is formed on the second main surface of the transparent substrate and performs the function of an antireflection coating for suppressing the re-reflection of light on the back surface of the transparent substrate.