Abstract: The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound containing at least one kind of metal selected from the group consisting of Ti, Zr, and Hf; (B) a crosslinking agent containing, per molecule, 2 or more and 4 or fewer cyclic ether structures having 2 to 13 carbon atoms; and (C) a solvent. This can provide: a composition for forming a metal-containing film having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R1 and R2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film, being a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and being a monomolecular compound containing two or more Sn atoms per molecule. This can provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Abstract: The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.

Abstract: The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000: where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1, where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2, where RA represents an organic group, RB represents a hydrogen atom or an organic group, and where R4 r

Abstract: A material for forming an organic film containing a compound of general formula (1) in which X is an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 is an integer of 2 to 10, R1 is at least one of formulae (2) to (4), where l1 is 0 or 1, and l2 is 0 or 1, and an organic solvent; an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Abstract: The present invention is a method for forming a resist underlayer film on a substrate, the method including the steps of: (i) forming an underlayer-film-precursor film by coating a substrate with a composition for forming a resist underlayer film, containing (A) a polymer and an organic solvent, to obtain a coating film and subjecting the coating film to heat treatment at a temperature of 100° C. or higher and 800° C. or lower for 10 seconds to 7,200 seconds to cure the coating film; and (ii) forming a resist underlayer film by curing the underlayer-film-precursor film by plasma irradiation, where the polymer (A) is an aromatic ring-containing resin containing no hydroxy groups or organic groups represented by the following general formulae (1) in a repeating unit contained in the polymer, where “p” represents 0 or 1, and “*” represents an attachment point.

Abstract: The present invention is a compound for forming a metal-containing film, containing: at least one metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the metal atom, where the ligand contains a group represented by any of the following formulae (a-1) to (a-3), where R1 represents a hydrogen atom or an organic group having 1 to 10 carbon atoms, and “*” represents an attachment point. This can provide: a compound for forming a metal-containing film that gives a metal-containing film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1) as a repeating unit; and (B) an organic solvent, where the polymer (A) has a molecular weight of 300 to 3,000, and the polymer (A) contains neither a repeating unit containing a hydroxy group as a substituent nor a repeating unit containing a heteroaromatic ring, and where Ar represents an unsubstituted divalent aromatic group having 6 to 30 carbon atoms. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits much better dry etching resistance than those of conventional organic underlayer film materials.

Abstract: The present invention is a composition for forming an organic film, containing: (A) a polymer having a repeating unit represented by the following general formula (1); (B) a resin for forming an organic film; and (C) a solvent, where R in the general formula (1) represents a saturated or unsaturated divalent organic group having 2 to 30 carbon atoms. This provides: a composition for forming an organic film which is excellent in film-formability (in-plane uniformity) on a substrate (wafer) and filling property and in which humps in an EBR process are suppressed; a method for forming an organic film, using the composition; and a patterning process.

Abstract: The present invention is a pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin and an organic solvent. The resin represented by the following formula (1) is used.

Abstract: The present invention is a compound (A) for forming a metal-containing film, where the compound is derived from a metal-containing compound, being a hydrolysate, condensate, or hydrolysis condensate of a metal compound represented by the following formula (A-1), and the compound (A) further has a ligand derived from an organic compound represented by the following formula (1). This can provide a compound for forming a metal-containing film having better dry etching resistance than those of conventional organic underlayer film materials and also having high filling property and/or high planarizing property.

Abstract: The present invention is a composition for forming a resist underlayer film used for a multilayer resist method contains (A) a resin, (B) a base generator, and (C) an organic solvent, wherein a weight-average molecular weight of (A) the resin is 3,000 to 10,000, (A) the resin is (A-1) a resin containing a phenolic hydroxyl group and a group obtained by modifying a phenolic hydroxyl group, or (A-2) a mixture of a resin containing a phenolic hydroxyl group and a resin containing a group obtained by modifying a phenolic hydroxyl group, and (A) the resin satisfies relations of a+b=1, 0.1?a?0.5, and 0.5?b?0.9, wherein “a” is a proportion of a phenolic hydroxyl group and “b” is a proportion of a group obtained by modifying a phenolic hydroxyl group contained in (A) the resin. This provides: a composition for forming a resist underlayer film having an excellent filling property and adhesiveness to a substrate, and a patterning process using thereof are to be provided.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is represented by the following general formula (M). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a material for forming an organic film, containing: an organic film compound represented by the following general formula (1); and an organic solvent. This provides: an organic film compound which allows the formation of an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film-formability and adhesiveness to a substrate; a material for forming an organic film containing the compound; and a patterning process using the material.

Abstract: A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of “n” having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70?a?0.99 and 0.01?b?0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH2)p—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH2)r—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Abstract: The present invention is a material for forming an organic film, including: a compound for forming an organic film (A) represented by the following general formula (1A); and an organic solvent (B), wherein Y represents an n1-valent organic group, a trivalent nitrogen atom, or a tetravalent carbon atom; n1 represents an integer of 3 to 8; and X is represented by the following general formula (1B), This provides: a compound that can form a cured organic film under inert gas conditions, having excellent heat resistance, filling and planarization characteristics of a pattern formed on a substrate, and having good adhesiveness to the substrate; and a material for forming an organic film containing the compound.

Abstract: The present invention is a composition for forming an organic film, comprising: a resin for forming an organic film; a polymer having a unit represented by the general formula (I), and at least one of a unit represented by the general formula (II) and a unit represented by the general formula (III); and a solvent, wherein the unit represented by the general formula (I), and at least one of the unit represented by the general formula (II) and the unit represented by the general formula (III) form a random copolymer, and the polymer has a fluorine content of 5 mass % to 16 mass %. This provides: a composition for forming an organic film that has excellent film-formability on a substrate and filling characteristics, and that inhibits humps in EBR process; and a method for forming an organic film, and patterning process using this composition.

Abstract: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: Provided is a resist underlayer film material that can form a resist underlayer film with excellent planarizing property and film formability and provides a resist underlayer film having appropriate etching properties. The resist underlayer film material includes: (A) a compound containing no phenolic hydroxyl group, or a compound having a phenolic hydroxyl group modified and in which a residual rate of the phenolic hydroxyl group is less than 2%, wherein the compound has a weight average molecular weight of 2,500 or less in terms of polystyrene by gel permeation chromatography; (B) a crosslinking agent containing a phenolic hydroxyl group represented by the following general formula (1); (C) a base generator; and (D) an organic solvent. (In the formula, Q is a single bond or a hydrocarbon group with a valency of q having 1 to 20 carbon atoms. R16 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. q is an integer of 1 to 5.