Abstract: A composition for forming a protective film using a polymer having an imide group: cured under a film-forming condition in air and an inert gas; forming a protective film having excellent heat resistance, embedding and planarization ability for a pattern formed on a substrate, and good adhesiveness to the substrate; and forming a protective film having excellent resistance against an alkaline aqueous hydrogen peroxide.

Abstract: The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W1 represents a tetravalent or hexavalent organic group, n1 represents an integer of 1 or 2, n2 represents 2 or 3, each R1 independently represents any in the following formula (1B), and a hydrogen atom of a benzene ring in the formula (1A) is optionally substituted with a fluorine atom. This provides: a compound having a dioxin structure, which is cured even under film formation conditions in inert gas, and which is capable of forming an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formability and adhesiveness to a substrate; and an organic film material containing the compound.

Abstract: A material for forming an organic film, containing: (A) compound represented by formula (1A); and (B) organic solvent, where W1 represents n1-valent organic group, “n1” represents integer of 2 to 4, X1 represents group represented by formula (1B), “n2” represents 1 or 2, and R1 represents any group represented by formulae (1C). A compound for forming organic film that cures under film formation conditions in inert gas as well as in air, and makes it possible to form organic film that has heat resistance, properties of filling and planarizing pattern formed in substrate, and favorable film-formability on and adhesiveness to substrate; material for forming organic film, containing compound; substrate for manufacturing semiconductor device including material; method for forming organic film, using material; patterning process using material; and aromatic carboxylic anhydride having crosslinkable moiety, expected to be an industrially useful raw material such as electronic materials and aerospace materials.

Abstract: A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R3 represents any one of the following groups.

Abstract: A composition for forming a protective film using a polymer having an imide group: cured under a film-forming condition in air and an inert gas; forming a protective film having excellent heat resistance, embedding and planarization ability for a pattern formed on a substrate, and good adhesiveness to the substrate; and forming a protective film having excellent resistance against an alkaline aqueous hydrogen peroxide. A composition for forming a protective film against alkaline aqueous hydrogen peroxide, including: (A) a polymer having a repeating unit represented by general formula (1A) having at least one or more fluorine atoms and at least one or more hydroxy groups, a terminal group is any one of the following general formulae (1B) and (1C); and organic solvent, wherein R1 represents any one group represented by the following formula (1D), and two or more kinds of R1 are optionally used in combination.

Abstract: A composition for forming an organic film containing (A) a resin or compound for forming an organic film, (B) a compound represented by the general formula (1), and (C) a solvent, wherein R1 is a terminal group represented by the general formula (2), X is an n1-valent organic group having 2 to 50 carbon atoms, and n1 represents an integer of 2 to 8, wherein R2 is a monovalent organic group, wherein the monovalent organic group contains at least any of structures having fluorine atoms represented by the general formula (3), m1 is 1 or 2, wherein when m1 is 1, Z represents a single bond or a divalent organic group optionally containing a heteroatom, and when m1 is 2, Z represents a trivalent organic group optionally containing a heteroatom,

Abstract: A material for forming an adhesive film formed between a silicon-containing middle layer and a resist upper layer film, containing: (A) a resin having structural units shown by formula (1) and formula (2); (B) a thermal acid generator; and (C) an organic solvent, in the component (A), the structural unit shown by formula (1) having a molar fraction of 5% or more and the structural unit shown by formula (2) having a molar fraction of 30% or more. An objective is to provide a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile; a patterning process using the material.

Abstract: Provided is a composition for forming an organic film which has both embedding and planarization properties, and a method for forming an organic film and a patterning process using the composition.

Abstract: A laminate includes a substrate, an adherent film formed thereon from a composition comprising a polymer and an organic solvent, and a resist film formed on the adherent film from a resist composition comprising a hypervalent iodine compound, a carboxy-containing compound and a solvent. When the laminate is processed by EB or EUV lithography, the resist film exhibits a high sensitivity and maximum resolution.

Abstract: An object of the present invention is to provide a composition for forming a resist underlayer film, which serves as an antireflective film and which has excellent resistance to alkaline hydrogen peroxide water and favorable filling/planarization characteristics and dry etching characteristics, as well as a patterning process and a resist underlayer film formation process each using the composition. A composition for forming a resist underlayer film, the composition including: (A) a polymer compound having a structural unit (a1) represented by the following formula (A-1) and at least one structural unit (a2) selected from structural units represented by the following formulae (A-2) to (A-4); (B) a crosslinking agent represented by the following formula (B-1); and (C) an organic solvent.

Abstract: The sulfonium salt monomer can be used for a chemically amplified resist composition which is processed by photolithography. The lithographic performance such as EL, LWR, CDU and DOF in using high-energy radiation such as KrF excimer laser, ArF excimer laser, an electron beam (EB) or EUV is excellent in solvent solubility and a high sensitivity and contrast. The sulfonium salt monomer has the formula (A).

Abstract: A composition for forming an organic film, containing: (A) a resin or compound for forming an organic film; (B) a polymer having a partial structure repeating unit represented by general formula (1); and (C) a solvent. The composition has excellent film-forming properties and embedding properties on a substrate, suppressing humps during an EBR step, and has excellent process tolerance when used as an organic underlayer film for a multi-layer resist, and provides a method for forming an organic film and pattern forming method using the composition: wherein R1 and R2 are hydrogen atoms or saturated or unsaturated organic groups having 1 to 20 carbon atoms, and have at least one fluorine-containing structure represented by the following general formula (2), at least one of R1 and R2 is an organic group that is not a hydrogen atom, and * represents an attachment point.

Abstract: The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound; (B) a surface modifier; and (C) a solvent, where the metal compound contains at least one metal atom selected from the group consisting of Ti, Zr, and Hf, and the surface modifier (B) is a polymer containing one or both of a repeating unit represented by the following general formula (1) and a repeating unit represented by the following general formula (2), and the polymer does not contain a repeating unit containing a hydroxy group, where R1 represents a hydrogen atom or a methyl group, R2 represents a monovalent organic group having 2 to 20 carbon atoms and containing a heterocyclic structure, and R3 represents a hydrogen atom or a linear or branched alkyl group having 1 to 3 carbon atoms. This can provide a metal-containing film in which an excellent pattern profile can be achieved and which can suppress fine-pattern collapse.

Abstract: The sulfonium salt monomer used for a chemically amplified resist composition has excellent solvent solubility, high sensitivity, and high contrast, and excellent lithography performance such as exposure latitude (EL), LWR, CDU, and depth of focus (DOF), particularly in photolithography using high-energy radiation such as KrF excimer laser light, ArF excimer laser light, an electron beam (EB), and EUV. The sulfonium salt monomer having the formula (A).

Abstract: The present invention is a compound for forming a metal-containing film, containing: at least one metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the metal atom via an oxygen atom, where the ligand has a cyclic structure (t) selected from a ring having 4 or more carbon atoms and containing 1 or more oxygen atoms, a ring having 3 or more carbon atoms and containing 2 or more oxygen atoms, and a ring having 3 or more carbon atoms and containing 1 or more oxygen atoms and 1 or more heteroatoms other than oxygen atoms. This can provide: a compound for forming a metal-containing film that gives a resist middle layer film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.

Abstract: An object of the present invention is to provide: a compound for forming a metal-containing film providing a resist middle layer film by which a good pattern shape can be obtained, and that has a high adhesion to a resist upper layer film and suppresses the collapse of a fine pattern in a fine patterning process during a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition.

Abstract: A material for forming an organic film, containing: a compound shown by formula (1); and an organic solvent. In formula (1), R1 represents one of the following formulae (2), R2 represents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group, an alkynyloxy group, an alkenyloxy group, a linear, branched, or cyclic alkyl group, a trifluoromethyl group, or a trifluoromethyloxy group, “n” represents 0 or 1, “m” represents an integer of 1 to 3, “p” represents 0 or 1, “l” represents an integer of 0 to 2, and W represents a divalent organic group having 2 to 40 carbon atoms. The objective: a compound which allows the formation of an organic underlayer film having excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, favorable film-formability and adhesiveness to a substrate; and a material for forming an organic film containing the compound.

Abstract: The present invention is a composition for forming an organic film, containing: a material for forming an organic film shown by the following general formula; and an organic solvent, where R1 represents a hydrogen atom, an allyl group, or a propargyl group, R2 represents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group having 1 to 4 carbon atoms, an alkynyloxy group having 2 to 4 carbon atoms, an alkenyloxy group having 2 to 4 carbon atoms, a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a trifluoromethyl group, or a trifluoromethyloxy group, m=0 or 1, n=1 or 2, l=0 or 1, k represents an integer of 0 to 2, W represents a divalent organic group having 1 to 40 carbon atoms, and each V independently represents a hydrogen atom or a linking moiety.

Abstract: The present invention is a composition for forming a film including a polymer having an aromatic group having a pentafluorosulfanyl group as a substituent. An object of the present invention is to provide a composition for forming a film that has a less environmental load and excellent coatability on a substrate.

Abstract: The present invention is a composition for forming an organic film, containing: a resin and/or compound (A) for forming an organic film; a polymer (B) having a repeating unit represented by the following general formula (1) and/or (2); and a solvent (C). This can provide: a composition for forming an organic film which is excellent in film-formability (in-plane uniformity) on a substrate (wafer) and filling property, can suppress humps in an EBR process, and allows an excellent process margin when used for an organic underlayer film for a multilayer resist; a method for forming an organic film, using the composition; a patterning process using the composition; a monomer; and a polymer.