Patents by Inventor Daisuke Kori
Daisuke Kori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240247156Abstract: The present invention is a conductive material composition containing: (A) metal nanowires; (B) a resin whose main chain is to be decomposed by an acid, heat, or both; and (C) a solvent. This can provide a conductive material composition for forming a conductive film having high-conductivity and high-transparency.Type: ApplicationFiled: January 4, 2024Publication date: July 25, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Shiori NONAKA, Daisuke KORI
-
Publication number: 20240248404Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.Type: ApplicationFiled: January 2, 2024Publication date: July 25, 2024Applicant: SHIN ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Nobuhiro NAGAMACHI, Daisuke KORI
-
Publication number: 20240241445Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material.Type: ApplicationFiled: December 19, 2023Publication date: July 18, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Nobuhiro Nagamachi, Daisuke Kori
-
Publication number: 20240242967Abstract: The present invention is a polymer for forming a metal-containing film including a repeating unit represented by the following general formula (1A), where W1 represents a divalent organic group having 1 to 31 carbon atoms; and each Q represents a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 31 carbon atoms. This provides: a polymer for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the polymer; and a patterning process in which the composition is used.Type: ApplicationFiled: December 18, 2023Publication date: July 18, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Shohei IWAMORI, Daisuke KORI
-
Patent number: 12032293Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.Type: GrantFiled: April 7, 2020Date of Patent: July 9, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Takayoshi Nakahara, Yasuyuki Yamamoto, Hironori Satoh, Tsutomu Ogihara
-
Publication number: 20240201595Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound is represented by the following general formula (A). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.Type: ApplicationFiled: November 3, 2023Publication date: June 20, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Nobuhiro NAGAMACHI, Daisuke KORI
-
Patent number: 12013640Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.Type: GrantFiled: May 25, 2021Date of Patent: June 18, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayoshi Nakahara, Takeru Watanabe, Daisuke Kori, Yusuke Biyajima, Tsutomu Ogihara
-
Publication number: 20240153771Abstract: The present invention is a composition for forming a metal oxide film, including: (A) a metal oxide nanoparticle; (B) a flowability accelerator containing a resin having a structural unit represented by the following general formula (1); (C) a dispersion stabilizer having two or more benzene rings or having one benzene ring and a structure represented by the following general formula (C-1), and the dispersion stabilizer being composed of an aromatic group-containing compound having a molecular weight of 500 or less; and (D) an organic solvent, wherein the flowability accelerator (B) has a content of 9 mass % or more in an entirety of the composition, a ratio Mw/Mn of 2.50?Mw/Mn?9.00, and the flowability accelerator (B) having no cardo structure.Type: ApplicationFiled: May 7, 2023Publication date: May 9, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Daisuke KORI, Hironori SATOH, Toshiharu YANO
-
Publication number: 20240116958Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.Type: ApplicationFiled: September 6, 2023Publication date: April 11, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Shohei IWAMORI, Daisuke KORI, Shun KIKUCHI, Ryunosuke HANDA, Seiichiro TACHIBANA
-
Publication number: 20240103365Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.Type: ApplicationFiled: August 9, 2023Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Daisuke KORI, Takashi SAWAMURA
-
Publication number: 20240103370Abstract: The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.Type: ApplicationFiled: August 9, 2023Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Daisuke KORI, Takashi SAWAMURA
-
Patent number: 11934100Abstract: A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R1 and R2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.Type: GrantFiled: November 22, 2021Date of Patent: March 19, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Yusuke Kai, Kazunori Maeda
-
Patent number: 11886118Abstract: A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where W1 represents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and R1 an alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.Type: GrantFiled: February 22, 2021Date of Patent: January 30, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Takashi Sawamura, Keisuke Niida, Seiichiro Tachibana
-
Publication number: 20240019782Abstract: The present invention is a composition for forming a metal oxide film including (A) an organic-inorganic composite material and (B) a solvent, (A) the organic-inorganic composite material being a reaction product of a metal source (I) and an organic source (II), the metal source (I) containing one or more compounds derived from a metal compound represented by the general formula (I-1), and the organic source (II) containing a compound having a unit represented by the general formula (II-1) and a cardo structure. The present invention provides a composition for forming a metal oxide film which has excellent coatability relative to a previously-known material for forming a metal oxide film and also has high filling and planarizing properties, a patterning process using the material, and a method for forming a metal oxide film.Type: ApplicationFiled: July 6, 2023Publication date: January 18, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Nobuhiro NAGAMACHI, Daisuke KORI
-
Patent number: 11851530Abstract: A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0?n2?6,0?n3?6, and 1?n2+n3?6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.Type: GrantFiled: January 26, 2021Date of Patent: December 26, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Takashi Sawamura, Keisuke Niida, Seiichiro Tachibana
-
Publication number: 20230400770Abstract: The present invention is a resist underlayer film material, including: (A) a compound or resin having a phenolic hydroxy group; (B) a base generator; and (C) an organic solvent. By the above configuration, the present invention provides: a resist underlayer film material that can form a resist underlayer film having excellent planarizing ability and film formability even on a substrate to be processed having a portion with particular difficulty in planarization, such as a wide trench structure, and that yields a resist underlayer film having an appropriate etching characteristic in a fine patterning process with a multilayer resist method in a semiconductor apparatus manufacturing process; and a patterning process and method for forming a resist underlayer film using the above material.Type: ApplicationFiled: June 8, 2023Publication date: December 14, 2023Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayoshi NAKAHARA, Yusuke BIYAJIMA, Daisuke KORI, Keisuke NIIDA, Yuji HARADA
-
Material for forming organic film, method for forming organic film, patterning process, and compound
Patent number: 11822247Abstract: The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point.Type: GrantFiled: February 24, 2021Date of Patent: November 21, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takayoshi Nakahara, Daisuke Kori, Yusuke Biyajima -
Patent number: 11782347Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R? represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.Type: GrantFiled: July 13, 2020Date of Patent: October 10, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Kenta Ishiwata, Yasuyuki Yamamoto, Toshiharu Yano
-
Publication number: 20230280648Abstract: The present invention is a composition for forming a metal oxide film, comprising (A) a metal oxide nanoparticle, (B) a flowability accelerator, which is a compound and/or a polymer having a molecular weight of 5000 or less represented by one or more selected from the following general formulae (I), (II) and (III), and (C) an organic solvent, wherein a weight ratio of the (A) metal oxide nanoparticle to the (B) flowability accelerator is 10/90 to 90/10. This makes it possible to provide a composition for forming a metal oxide film having excellent dry etching resistance relative to a previously-known organic underlayer film composition and also has high filling and planarizing properties, a patterning process using the composition, and a method for forming a metal oxide film (resist underlayer film).Type: ApplicationFiled: February 7, 2023Publication date: September 7, 2023Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki Kobayashi, Daisuke Kori, Toshiharu Yano
-
Publication number: 20230280655Abstract: A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R3 represents any one of the following groups.Type: ApplicationFiled: February 15, 2023Publication date: September 7, 2023Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke KORI, Shohei Iwamori