Patents by Inventor Daisuke Kori

Daisuke Kori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190194391
    Abstract: The invention provides: a dihydroxynaphthalene condensate which suppresses soft particle generation and is suitably usable for a composition excellent in filterability; and a method for producing the dihydroxynaphthalene condensate, in the method for producing a dihydroxynaphthalene condensate, dihydroxynaphthalene to be used has a sulfur element content of 100 ppm or less in terms of mass among constituent elements. The dihydroxynaphthalene and a condensation agent are condensed in presence of an acid or a base to produce the dihydroxynaphthalene condensate.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Seiichiro TACHIBANA, Tsutomu OGIHARA, Satoru KITANO, Yukio ABE, Fumihiro HATAKEYAMA, Taiki KOBAYASHI
  • Publication number: 20190194102
    Abstract: The invention provides a method for purifying dihydroxynaphthalene, which is capable of suppressing soft particle generation and obtaining dihydroxynaphthalene serving as a raw material of a resin and composition excellent in filterability. The method for purifying dihydroxynaphthalene includes the step of removing a sulfur content in the dihydroxynaphthalene with an adsorbent, and neutral alumina is used as the adsorbent.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro TACHIBANA, Daisuke KORI, Tsutomu OGIHARA, Satoru KITANO, Yukio ABE, Fumihiro HATAKEYAMA, Taiki KOBAYASHI
  • Publication number: 20190198341
    Abstract: The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Daisuke KORI, Seiichiro TACHIBANA, Yusuke BIYAJIMA, Naoki KOBAYASHI, Kazumi NODA
  • Patent number: 10243430
    Abstract: The invention provides a rotating electrical machine system in which an air volume of a refrigerant is increased near the center of a rotating electrical machine in the axial direction is improved. The rotating electrical machine includes a rotor and a stator, in which the stator core, laminated electromagnetic steel sheets formed by laminating a plurality of electromagnetic steel sheets in the axial direction are divided into a plurality of sets of packet cores, and between one of the packet cores of the plurality of sets and another packet core adjacent to it, there is formed a duct providing a flow channel of the stator, and in a duct situated at the center side from both ends in the axial direction among the duct, there is a portion of two packet cores facing each other across the duct, a diameter direction length of the two packet cores becoming long.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: March 26, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Daisuke Kori, Ryuichiro Iwano, Masanori Sawahata, Kazuo Nishihama, Motonobu Iizuka, Takayuki Koyama, Kenichi Sugimoto
  • Patent number: 10241412
    Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: March 26, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroko Nagai, Takeru Watanabe, Daisuke Kori, Tsutomu Ogihara
  • Patent number: 10228621
    Abstract: In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: March 12, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Daisuke Kori, Tsutomu Ogihara
  • Publication number: 20190064659
    Abstract: The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.
    Type: Application
    Filed: July 25, 2018
    Publication date: February 28, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Tsutomu OGIHARA, Takeru WATANABE, Keisuke NIIDA, Takashi SAWAMURA
  • Publication number: 20190067021
    Abstract: The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 28, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Tsutomu OGIHARA, Takeru WATANABE, Keisuke NIIDA, Takashi SAWAMURA
  • Publication number: 20190041752
    Abstract: The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
    Type: Application
    Filed: July 24, 2018
    Publication date: February 7, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro TACHIBANA, Hiroko NAGAI, Daisuke KORI, Tsutomu OGIHARA
  • Publication number: 20190027369
    Abstract: The invention provides: a resin as a material of a composition for forming an organic film having high filling and planarizing properties and etching resistance; the composition; and a patterning process using the composition. Provided is a composition for forming an organic film, including: (I) a resin having a structure shown by a general formula (1) in which a ring structure AR containing an aromatic ring and a spiro structure SP bonded to four of the ARs are alternately repeated in at least a portion of a repeating unit; and (II) an organic solvent.
    Type: Application
    Filed: June 25, 2018
    Publication date: January 24, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Tsutomu OGIHARA
  • Patent number: 10177621
    Abstract: A rotating electric machine comprises a field winding provided on a rotor iron core and a neutral ring supported independently of the field winding, wherein: the field winding and the neutral ring are electrically connected to each other through a connecting wire; the neutral ring is disposed spaced with respect to the rotor iron core; and the connecting wire absorbs the stress difference between the field winding and the neutral ring when a centrifugal stress is applied.
    Type: Grant
    Filed: August 6, 2014
    Date of Patent: January 8, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Naoki Kunihiro, Daisuke Kori, Motonobu Iizuka, Tetsuo Fujigaki, Atsushi Fukunaga, Yasunori Otsuki, Masakatsu Sato, Masanori Matsumoto, Takeshi Nakayama, Masaaki Endo, Yoshihiro Yasui, Yasushi Hayasaka
  • Patent number: 10156788
    Abstract: The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: December 18, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Daisuke Kori, Tsutomu Ogihara
  • Publication number: 20180315594
    Abstract: A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.
    Type: Application
    Filed: March 28, 2018
    Publication date: November 1, 2018
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Osamu WATANABE, Takeshi NAGATA, Naoki KOBAYASHI, Daisuke KORI
  • Publication number: 20180284614
    Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.
    Type: Application
    Filed: March 8, 2018
    Publication date: October 4, 2018
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hironori SATOH, Hiroko NAGAI, Takeru WATANABE, Daisuke KORI, Tsutomu OGIHARA
  • Publication number: 20180284615
    Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
    Type: Application
    Filed: March 8, 2018
    Publication date: October 4, 2018
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroko NAGAI, Takeru WATANABE, Daisuke KORI, Tsutomu OGIHARA
  • Patent number: 10075112
    Abstract: A field winding type synchronous machine connects to a DC line and includes a rotor; a stator; an exciter that passes a current through a field winding of the rotor; and a rectification circuit that rectifies an output from the exciter and provides the output to the DC line. The synchronous machine includes the field winding being connected in parallel to a first circuit in which a parallel circuit including a rectifier element and a first switchgear is connected in series to a discharge resistor, a second switchgear being connected in series to the DC line that connects the first circuit to the rectification circuit, and a capacitor being provided between the discharge resistor and the input side of an electric power source element for gating the first switchgear.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: September 11, 2018
    Assignee: Hitachi, Ltd.
    Inventors: Daisuke Kori, Motonobu Iizuka, Takayuki Koyama
  • Patent number: 10047244
    Abstract: The present invention provides a method for producing a composition for forming an organic film, the composition being used in a process of manufacturing a semiconductor apparatus, the method including the steps of (1) washing a compound having an aromatic skeleton by an acid, (2) preparing a composition solution containing the washed compound, (3) filtering the prepared composition solution through a filter, and (4) putting the filtered composition solution into a container made of an organic resin. There can be provided a method for producing a composition for forming an organic film that can form an organic film in which defects after dry etching are reduced.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: August 14, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke Kori, Tsutomu Ogihara, Motoaki Iwabuchi
  • Patent number: 10007183
    Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: June 26, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro Tachibana, Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Kazumi Noda, Toshiharu Yano
  • Patent number: 9984878
    Abstract: The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1), wherein R represents a group containing one or more fluorine atoms. There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: May 29, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Daisuke Kori
  • Patent number: 9977330
    Abstract: The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L8? represents the partial structure represented by the following formula (i), 0?o<1, 0<p?1 and o+p=1, wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L0 represents a divalent organic group.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: May 22, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro Tachibana, Daisuke Kori, Tsutomu Ogihara, Takeru Watanabe, Kazumi Noda, Toshiharu Yano