Abstract: The present invention is a composition for forming an organic film, comprising: a resin for forming an organic film; a polymer having a unit represented by the general formula (I), and at least one of a unit represented by the general formula (II) and a unit represented by the general formula (III); and a solvent, wherein the unit represented by the general formula (I), and at least one of the unit represented by the general formula (II) and the unit represented by the general formula (III) form a random copolymer, and the polymer has a fluorine content of 5 mass % to 16 mass %. This provides: a composition for forming an organic film that has excellent film-formability on a substrate and filling characteristics, and that inhibits humps in EBR process; and a method for forming an organic film, and patterning process using this composition.

Abstract: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: Provided is a resist underlayer film material that can form a resist underlayer film with excellent planarizing property and film formability and provides a resist underlayer film having appropriate etching properties. The resist underlayer film material includes: (A) a compound containing no phenolic hydroxyl group, or a compound having a phenolic hydroxyl group modified and in which a residual rate of the phenolic hydroxyl group is less than 2%, wherein the compound has a weight average molecular weight of 2,500 or less in terms of polystyrene by gel permeation chromatography; (B) a crosslinking agent containing a phenolic hydroxyl group represented by the following general formula (1); (C) a base generator; and (D) an organic solvent. (In the formula, Q is a single bond or a hydrocarbon group with a valency of q having 1 to 20 carbon atoms. R16 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. q is an integer of 1 to 5.

Abstract: The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and W1 represents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and RA represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups.

Abstract: A patterning process capable of readily and efficiently forming a fine pattern without damaging a substrate is provided.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a conductive material composition containing: (A) metal nanowires; (B) a resin whose main chain is to be decomposed by an acid, heat, or both; and (C) a solvent. This can provide a conductive material composition for forming a conductive film having high-conductivity and high-transparency.

Abstract: The present invention is a polymer for forming a metal-containing film including a repeating unit represented by the following general formula (1A), where W1 represents a divalent organic group having 1 to 31 carbon atoms; and each Q represents a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 31 carbon atoms. This provides: a polymer for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the polymer; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound is represented by the following general formula (A). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Abstract: The present invention is a composition for forming a metal oxide film, including: (A) a metal oxide nanoparticle; (B) a flowability accelerator containing a resin having a structural unit represented by the following general formula (1); (C) a dispersion stabilizer having two or more benzene rings or having one benzene ring and a structure represented by the following general formula (C-1), and the dispersion stabilizer being composed of an aromatic group-containing compound having a molecular weight of 500 or less; and (D) an organic solvent, wherein the flowability accelerator (B) has a content of 9 mass % or more in an entirety of the composition, a ratio Mw/Mn of 2.50?Mw/Mn?9.00, and the flowability accelerator (B) having no cardo structure.

Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.

Abstract: The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.

Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.