Abstract: An evaluation test apparatus is configured to evaluate or test measurement precision of a biological information measurement device configured to measure biological information. The evaluation test apparatus includes: a function generator configured to generate a plurality of input waveform signals by a predetermined operation; an indenter configured to pressure a piezoelectric element of the biological information measurement device; a vibration driver selected from a motor and a solenoid and configured to vibrate the indenter; and a control board configured to control the vibration driver. The control board includes an adder configured to combine the plurality of input waveform signals generated by the function generator. The vibration driver vibrates the indenter based on a composite waveform signal combined by the adder.

Abstract: A piezoelectric sensor configured to detect a change of pressure from a living body in a predetermined location includes: a pair of electrodes spaced from one another and formed to spread as a sheet; a pressure-sensitive layer disposed between the pair of electrodes and configured to generate electric charge in response to the change of pressure; a pair of terminals connected to the pair of electrodes, respectively, and configured to output an electrical signal supplied from the pair of electrodes in response to the change of pressure of the living body. An edge of at least one of the pair of electrodes extending toward the pair of terminals is disposed to protrude outside the pressure-sensitive layer, and the electrical signal propagates through the edge and is outputted from the pair of terminals.

Abstract: A piezoelectric sensor configured to detect a change of pressure from a living body in a predetermined location includes: a pair of electrodes spaced from one another and formed to spread as a sheet; a pressure-sensitive layer disposed between the pair of electrodes and configured to generate electric charge in response to the change of pressure; a pair of terminals connected to the pair of electrodes, respectively, and configured to output an electrical signal supplied from the pair of electrodes in response to the change of pressure of the living body. An edge of at least one of the pair of electrodes extending toward the pair of terminals is disposed to protrude outside the pressure-sensitive layer, and the electrical signal propagates through the edge and is outputted from the pair of terminals.

Abstract: A living body detection device configured to detect a presence of a living body in a predetermined location. The living body detection device includes a piezoelectric element configured to detect a pressure change in the predetermined location, and a processor configured to: calculate multiple pieces of living body information, based on the pressure change detected by the piezoelectric element; calculate a composite index which compositively indicates that the multiple pieces of living body information are caused by the living body, based on the calculated multiple pieces of living body information; and determine whether there is or not the living body in the predetermined location, based on the calculated composite index.

Abstract: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.

Abstract: A method for producing a silver nanoparticle dispersion according to the present invention includes the steps of mixing an amine compound, a resin, and a silver salt to yield a complex compound; and heating and decomposing the complex compound to form silver nanoparticles. A silver nanoparticle ink can be obtained by adding an organic solvent to the silver nanoparticle dispersion obtained by this method. The resin includes, for example, a polymer exhibiting viscosity at a temperature within the range of 20° C. to 50° C. or a high molecular weight compound exhibiting viscosity at a temperature within the range of 20° C. to 50° C.

Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.

Abstract: Provided is a method of manufacturing a thin film transistor satisfying the relation of L<5 ?m. The method includes a process of forming a streak portion by performing transfer printing on a support using a release member which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A?0.05.

Abstract: A method for producing a silver nanoparticle dispersion according to the present invention includes the steps of mixing an amine compound, a resin, and a silver salt to yield a complex compound; and heating and decomposing the complex compound to form silver nanoparticles. A silver nanoparticle ink can be obtained by adding an organic solvent to the silver nanoparticle dispersion obtained by this method. The resin includes, for example, a polymer exhibiting viscosity at a temperature within the range of 20° C. to 50° C. or a high molecular weight compound exhibiting viscosity at a temperature within the range of 20° C. to 50° C.

Abstract: A method for producing silver nanoparticles according to the present invention includes the steps of: mixing an amine mixture and a silver compound to yield a complex compound; and heating and decomposing the complex compound to form silver nanoparticles. The amine mixture contains: a primary amine (A) having 8 or more carbon atoms and a melting point of 20° C. or lower; a diamine (B) having a primary amino group, a tertiary amino group, 4 or more carbon atoms, and a melting point of 20° C. or lower; and a cis-unsaturated primary amine (C) having 12 or more carbon atoms and a melting point of 30° C. or lower.

Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.

Abstract: An object of the present invention is to provide a benzobis(thiadiazole) derivative, which has an excellent mobility of electron (field-effect mobility) and also has an excellent stability in the atmosphere. The present invention relates to a benzobis(thiadiazole) derivative or the like, which has cyclic imide structures annelated to an aromatic ring in the molecule, represented by the following general formula (1) or (2) wherein R, A and Z represent predetermined groups.

Abstract: A benzobis(thiadiazole) derivative represented by the following general formula (1): in which R1 represents a linear or branched alkyl group, or any one of the groups of the following formula (2): in which R represents a linear or branched alkyl group; R2 represents a hydrogen atom; and R3 represents a hydrogen atom, a linear or branched alkyl group, or any one of the groups of the formula (2); with the proviso that at least one of R1 and R3 represents any one of the groups of the formula (2); and two R1 groups, two R2 groups, and two R3 groups may be the same as, or different from each other.

Abstract: A method for forming a wiring according to the present invention includes: applying an ink (6) that exhibits electrical conductivity upon light absorption to a contact hole formation portion of an upper face of an insulating resin layer (3) formed on a lower wiring element (2); and irradiating the ink (6) with light to render the ink (6) conductive and also to remove a part of the insulating resin layer (3) by heat emitted from the ink (6) so as to form a contact hole (5), the part of the insulating resin layer (3) lying under the portion of the face to which the ink (6) is applied. A step of forming an upper wiring element (4) on the upper face of the insulating resin layer (3) may further be carried out, the upper wiring element (4) being electrically continuous with the lower wiring element (2) through the contact hole (5).

Abstract: The metal thin film production method of the present invention includes, in the following order, the steps of: preparing a substrate (1) having thereon an underlayer (2) formed of an insulating resin; subjecting a surface of the underlayer (2) to a physical surface treatment for breaking bonds of organic molecules constituting the insulating resin; subjecting the substrate (1) to a heat treatment at a temperature of 200° C. or lower; applying a metal nanoparticle ink to the underlayer (2); and sintering metal nanoparticles contained in the metal nanoparticle ink at a temperature equal to or higher than a glass transition temperature of the underlayer (2). A fused layer (4) having a thickness of 100 nm or less is formed between the underlayer (2) and a metal thin film (3) formed by sintering the metal nanoparticles.

Abstract: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a fist layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.

Abstract: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.

Abstract: A method for forming a wiring according to the present invention includes: applying an ink (6) that exhibits electrical conductivity upon light absorption to a contact hole formation portion of an upper face of an insulating resin layer (3) formed on a lower wiring element (2); and irradiating the ink (6) with light to render the ink (6) conductive and also to remove a part of the insulating resin layer (3) by heat emitted from the ink (6) so as to form a contact hole (5), the part of the insulating resin layer (3) lying under the portion of the face to which the ink (6) is applied. A step of forming an upper wiring element (4) on the upper face of the insulating resin layer (3) may further be carried out, the upper wiring element (4) being electrically continuous with the lower wiring element (2) through the contact hole (5).

Abstract: The metal thin film production method of the present invention includes, in the following order, the steps of: preparing a substrate (1) having thereon an underlayer (2) formed of an insulating resin; subjecting a surface of the underlayer (2) to a physical surface treatment for breaking bonds of organic molecules constituting the insulating resin; subjecting the substrate (1) to a heat treatment at a temperature of 200° C. or lower; applying a metal nanoparticle ink to the underlayer (2); and sintering metal nanoparticles contained in the metal nanoparticle ink at a temperature equal to or higher than a glass transition temperature of the underlayer (2). A fused layer (4) having a thickness of 100 nm or less is formed between the underlayer (2) and a metal thin film (3) formed by sintering the metal nanoparticles.

Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.