Patents by Inventor Daisuke Kumaki

Daisuke Kumaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110278562
    Abstract: The present invention provides a light-emitting element having less increase in driving voltage with the accumulation of light-emission time, and provides a light-emitting element having less increase in resistance value with the increase in film thickness. A light-emitting element includes a first layer, a second layer and a third layer between a first electrode and a second electrode. The first layer is provided to be closer to the first electrode than the second layer, and the third layer is provided to be closer to the second electrode than the second layer. The first layer is a layer including an aromatic amine compound and a substance showing an electron accepting property to the aromatic amine compound. The second layer includes a substance of which an electron transporting property is stronger than a hole transporting property, and a substance showing an electron donating property to the aforementioned substance.
    Type: Application
    Filed: August 2, 2011
    Publication date: November 17, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Publication number: 20110272690
    Abstract: A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1?m?n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contain a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 10, 2011
    Inventors: Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo
  • Publication number: 20110241007
    Abstract: The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side.
    Type: Application
    Filed: June 16, 2011
    Publication date: October 6, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Publication number: 20110233597
    Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.
    Type: Application
    Filed: June 8, 2011
    Publication date: September 29, 2011
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Publication number: 20110215311
    Abstract: To provide an electrode for an organic device which can be widely applied to organic devices by having both hole injection function and electron injection function. A carrier injection electrode layer 110 in which a metal for electron injection 112 (a metal having a work function of 4.2 eV or less) and a metal for hole injection 113 (a metal having a work function of more than 4.2 eV) are mixed with one kind of organic compound 111 is provided between a first organic layer 100a and a second organic layer 100b. Thus, carriers are injected into a carrier injection electrode layer 110 in the direction according to voltage application, and seemingly, current flows between an organic layer 100 and a metal electrode 101, or between the first organic layer 100a and the second organic layer 100b.
    Type: Application
    Filed: May 16, 2011
    Publication date: September 8, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tetsuo Tsutsui, Daisuke Kumaki
  • Patent number: 8008651
    Abstract: It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer 102 containing a light-emitting material, a second layer 103 containing an N-type semiconductor, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium are provided between an anode 101 and a cathode 106, wherein the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the cathode 106 are provided in order, and wherein the cathode has a layer containing reflective metal.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: August 30, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Patent number: 8008652
    Abstract: An object of the present invention is to provide a light emitting element or a light emitting device that can be formed without any regard for a work function of an electrode. Another object of the invention is to provide a light emitting element or a light emitting device in that the range of choice for a material of an electrode can be widened. In an aspect of the invention, a light emitting device includes first, second and third layers between mutually-facing first and second electrodes. The first layer has a donor level. The second layer is a single layer or a laminated body containing a light emitting substance. The third layer has an acceptor level. When a potential of the second electrode is set higher than that of the first electrode, holes generated in the second layer are injected in the third layer.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: August 30, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Publication number: 20110156030
    Abstract: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property.
    Type: Application
    Filed: March 10, 2011
    Publication date: June 30, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Publication number: 20110156029
    Abstract: It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer 102 containing a light-emitting material, a second layer 103 containing an N-type semiconductor, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium are provided between an anode 101 and a cathode 106, wherein the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the cathode 106 are provided in order, and wherein the cathode has a layer containing reflective metal.
    Type: Application
    Filed: March 9, 2011
    Publication date: June 30, 2011
    Inventors: Daisuke Kumaki, Satoshi SEO
  • Publication number: 20110147730
    Abstract: It is an object of the present invention to provide a material which is excellent in a hole injecting property and a hole transporting property, and to provide a light emitting element and a light emitting device using a material which is excellent in a hole injecting property and a hole transporting property. The present invention provides a carbazole derivative represented by a general formula (1). The carbazole derivative according to the present invention is excellent in the hole injecting property. By using the carbazole derivative according to the present invention as a hole injecting material for a hole injecting layer of a light emitting element, a driving voltage can be reduced. In addition, a lower driving voltage, improvement of the luminous efficiency, a longer life time, and higher reliability can be realized by applying the material to a light emitting element or a light emitting device.
    Type: Application
    Filed: March 1, 2011
    Publication date: June 23, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Harue NAKASHIMA, Sachiko KAWAKAMI, Daisuke KUMAKI
  • Patent number: 7964891
    Abstract: The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side.
    Type: Grant
    Filed: November 18, 2008
    Date of Patent: June 21, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Patent number: 7964864
    Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.
    Type: Grant
    Filed: September 27, 2005
    Date of Patent: June 21, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Publication number: 20110108864
    Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
    Type: Application
    Filed: January 19, 2011
    Publication date: May 12, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi SEO, Daisuke KUMAKI, Hisao IKEDA, Junichiro SAKATA
  • Patent number: 7940002
    Abstract: A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1?m?n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contain a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: May 10, 2011
    Assignee: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo
  • Publication number: 20110101345
    Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Publication number: 20110101380
    Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Daisuke KUMAKI, Satoshi SEO
  • Patent number: 7901791
    Abstract: It is an object of the present invention to provide a material which is excellent in a hole injecting property and a hole transporting property, and to provide a light emitting element and a light emitting device using a material which is excellent in a hole injecting property and a hole transporting property. The present invention provides a carbazol derivative represented by a general formula (1). The carbazol derivative according to the present invention is excellent in the hole injecting property. By using the carbazol derivative according to the present invention as a hole injecting material for a hole injecting layer of a light emitting element, a driving voltage can be reduced. In addition, a lower driving voltage, improvement of the luminous efficiency, a longer life time, and higher reliability can be realized by applying the material to a light emitting element or a light emitting device.
    Type: Grant
    Filed: October 14, 2005
    Date of Patent: March 8, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Nakashima, Sachiko Kawakami, Daisuke Kumaki
  • Patent number: 7893427
    Abstract: An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: February 22, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Patent number: 7892657
    Abstract: An object of the present invention is to provide a light emitting element which has low driving voltage and can increase lifetime longer than a conventional light emitting element. One feature is to include a plurality of layers which includes a layer containing a light emitting substance between first and second electrodes, in which at least one layer of the plurality of layers contains a carbazole derivative represented by General Formula (1) and a substance having an electron accepting property with respect to the carbazole derivative represented by General Formula (1). By employing this structure, the above object can be achieved.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: February 22, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Nakashima, Ryoji Nomura, Hiroko Abe, Satoshi Seo, Junichiro Sakata, Daisuke Kumaki, Hisao Ikeda
  • Patent number: 7875893
    Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: January 25, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Daisuke Kumaki, Hisao Ikeda, Junichiro Sakata