Abstract: There are disclosed a process for producing a polyamide acid having at least one siloxane bond, which comprises carrying out the reaction of:(a) a tetracarboxylic dianhydride having at least one siloxane bond of the formula: ##STR1## wherein R represents a monovalent hydrocarbon group and m is an integer of 1 or more;(b) a diamine; and(c) a diaminoamide compound of the formula (II): ##STR2## wherein Ar represents an aromatic residue, Y represents SO.sub.2 or CO, and one amino group and Y--YNH.sub.

Abstract: In a resin packaged semiconductor device including a semiconductor element, the back side of which is bonded to a support and the front side of which has electrodes which are electrically connected to electroconductive portions by fine leads, when an adhesive composition comprising an epoxy resin, a novolak type phenolic resin, a solvent for the both resins and a powdery filler, and if necessary, a curing accelerator and a coupling agent, is used for binding the semiconductor and the support, the resulting semiconductor device is excellent in moisture resistance and corrosion resistance.

Abstract: A developing solution comprising at least two compounds selected from choline and quaternary ammonium salts is suitable for developing a negative-type photosensitive resin composition with exposure to a smaller light amount.

Abstract: Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the aromatic polyimide polymer having a saturated water absorption rate of 1% or less. The polyimide polymer is exemplified as the polymer having the following recurring units: ##STR1## wherein R is an aliphatic or aromatic group; R.sub.1 and R.sub.2 are independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or CF.sub.3 ; and R.sub.3 to R.sub.6 are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. The disclosure is also concerned with resin encapsulated semiconductor devices in which the aromatic polyimide polymer of low water absorption is used as an insulating layer or passivation film.

Abstract: A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.

Abstract: A liquid crystal display device containing a liquid crystal orientation controlling film made from a fluorine-containing polyimide-isoindoloquinazolinedione is high in a tilt angle and excellent in viewing properties.

Abstract: Fine patterns with high degree of resolution and high resistance to etching can be produced by coating a solution of a photosensitive composition comprising (a) an aromatic azide compound and (b) an alkaline-aqueous-solution-soluble polymer on a substrate, exposing predetermined portions of the coated photosensitive composition to ultraviolet light, developing with an alkaline aqueous solution to form a resist pattern, and etching the substrate using said resist pattern as a mask.

Abstract: 4'-Azidobenzal-2-methoxyacetophenone is an excellent photosensitive compound and can give a photosensitive composition together with an alkaline-aqueous-solution-soluble polymer which can be insolubilized in an alkaline aqueous solution by photochemical curing with 4'-azidobenzal-2-methoxyacetophenone, and if necessary together with an organic solvent, said composition showing a very small change in viscosity with the lapse of long time.

Abstract: There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

Abstract: Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.

Abstract: There is disclosed an image-formable resinous composition comprising a poly(olefinsulfone) and a matrix polymer, in which the matrix polymer being a novolac phenol resin obtained from:(1) m-cresol and p-cresol as main components, the molar ratio of m-cresol/p-cresol being within the range from 40/60 to 55/45, and(2) formaldehyde, the molar ratio of formaldehyde/(phenol or phenol derivatives) being within the range from 5/10 to 8/10.The image-formable resinous composition has a high sensitivity and a high dissolution.

Abstract: There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

Abstract: A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.

Abstract: In a semiconductor memory device comprising semiconductor memory elements having such a degree of integration in memory circuits as to produce soft errors by incident .alpha.-rays derived from a packaging material and a package which packages the memory elements and is made from the packaging material, when an .alpha.-rays shielding layer made from a resinous material, which may contain one or more high-purity fillers, containing a total amount of 1 part per billion or less of uranium and thorium is interposed between the memory elements and the package, the generation of soft errors is reduced remarkably.

Abstract: An improved method of preparing polyamide acid for processing of semiconductors from a diamine and a tetracarboxylic acid dianhydride with a diaminocarbonamide, is provided (1) by reacting the components at below 40.degree. C. until the reduced viscosity reaches above 0.5 dl/g. at 30.degree. C., and then, (2) by adjusting the reduced viscosity to more than 0.3 dl/g, at 30.degree.0 C. and the solution viscosity to 500-3,000 cps at 25.degree. C. by heating at 50.degree.-100.degree. C. By applying the polyamide acid obtained by the method to semiconductor apparatus, they get sufficient heat-resistance without pin holes, and their reliability may be greatly improved.

Abstract: An improved method of preparing polyamide acid for processing of semiconductors from a diamine and a tetracarboxylic acid dianhydride optionally with a diaminocarbonamide, is provided (1) by reacting the components at below 40.degree. C. until the reduced viscosity reaches above 0.5 dl/g. at 30.degree. C. and then, (2) by adjusting the reduced viscosity to more than 0.3 dl/g, at 30.degree. C. and the solution viscosity to 500-3,000 cps at 25.degree. C. by heating at 50-100.degree. C. By applying the polyamide acid obtained by the method to semiconductor apparatus, they get sufficient heat-resistance without pin holes, and their reliability may be greatly improved.

Abstract: A polyimide-isoindroquinazolinedione-silicone copolymer resin produced by reacting (a) a diaminoamide, (b) a diaminosiloxane, (c) a diamine, and (d) a tetracarboxylic acid dianhydride to give a polyamide acid-silicone intermediate, which is then subjected to dehydration and ring closure, is excellent particularly in adhesiveness, moisture resistance, wear resistance and heat resistance. The polyamide acid-silicone intermediate is stable in the form of a varnish and usuable commercially as a raw material for the polyimide-isoindroquinazolinedione-silicone copolymer resin.

Abstract: Polyimide-amide-carboxylic acids produced by reacting an aromatic diamine with an aromatic tetracarboxylic acid dianhydride in amounts of 1.5 to 2.0 moles of the latter per mole of the former in the presence of an inert solvent, and reacting the resulting intermediate reaction product with an aromatic diisocyanate in about equivalent amounts at a temperature of 50.degree. to 100.degree. C. while removing generated carbon dioxide from the reaction system are good in heat resistance, wear resistance, chemical resistance, etc.

Abstract: A method of preparing a polyamide acid type intermediate is provided, by using a purified inert solvent and monomer compounds, or diamine and/or diaminoamide compounds and a tetracarboxylic acid dianhydride, whose ionic impurities and free acid contents were reduced by recrystallization purification. The polyamide acid type intermediate may improve electrical properties and heat resistance of semiconductors when it is applied to, for instance, a surface-protecting film of semiconductors or an interlayer-insulating film of semiconductors having a multiple layer wiring structure.