Abstract: A decorative sheet with improved heat resistance, scratch resistance, and stain resistance is provided. The decorative sheet (1) includes a primary film layer (2) and a surface protective layer, in which the surface protective layer includes a first gloss-adjustment layer (5) provided on the primary film layer (2) and containing a cured product of a first ionizing radiation-curable resin, and a second gloss-adjustment layer (6) partially covering the upper surface of the first gloss-adjustment layer (5) and containing a cured product of a second ionizing radiation-curable resin, the second gloss-adjustment layer has an upper surface with an uneven structure having a ratio RSm/Ra of a mean width RSm of roughness profile elements to an arithmetic mean roughness Ra that is in the range of 10 or more and 600 or less, and the uneven structure includes a plurality of ridge portions each protruding in a ridge shape.

Abstract: A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

Abstract: A decorative sheet includes a primary film layer and a surface protection layer provided on one surface of the primary film layer. The surface protection layer has a surface provided with an uneven structure having a plurality of ridged portions protruding in a ridged pattern. The uneven structure of the surface protection layer has a reduced peak height Rpk of less than 3.5 ?m. The surface protection layer has a mass concentration of carbon C (% by mass), a mass concentration of oxygen O (% by mass), and a mass concentration of silicon Si (% by mass) satisfying the following relational expression: 0.5?{Si/(C+O+Si)}×100.

Abstract: A protective film containing a transparent polyolefin resin layer with improved or even superior weather resistance, and a sheet using the protective film. A protective film according to the present embodiment includes at least a transparent polyolefin resin layer. The transparent polyolefin resin layer contains a hindered amine light stabilizer represented by general formula (I) below in a range of 0.05 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of a transparent olefin resin included in the transparent polyolefin resin layer. (In general formula (I), R is an alkyl group having 1-18 carbon atoms, or a cycloalkyl group having 5-8 carbon atoms.

Abstract: A photodetection device according to one embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface that are opposed to each other and including a plurality of pixels arranged in an array in an in-plane direction; a first trench extending between the first surface and the second surface in an approximate middle of each of the plurality of pixels; a first semiconductor layer of a first conductivity type, the first semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface; and a second semiconductor layer of a second conductivity type that is opposite to the first conductivity type, the second semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface.

Abstract: A protective film that includes at least one of a transparent polyolefin resin layer and a surface protection layer, and that has excellent weather resistance and a low level of white turbidity, which is a factor that impairs design properties; and a sheet using the protective film. The protective film comprises at least a transparent polyolefin resin layer, wherein the transparent polyolefin resin layer contains a first hydroxyphenyltriazine-based ultraviolet absorber (UVA-A) having a structure represented by the general formula below. In the general formula, R1-R3 each independently represent a hydrogen atom, a methyl group, a phenyl group, or an alkoxy group, and at least two of R1-R3 are an alkoxy group having 8-18 carbon atoms, R4 and R5 each independently represent a hydroxyl group, a methyl group, or a hydrogen atom, and R6-R8 each independently represent a methyl group or a hydrogen atom.

Abstract: A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

Abstract: According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

Abstract: A technique for activating a fuse function in a semiconductor device in a relatively short time is provided. The semiconductor device includes a second bonding material provided on the upper surface of the insulating substrate, a third bonding material provided on an upper surface of the semiconductor element, a through hole extending from the first circuit pattern to the second circuit pattern via the core material, a conductive film provided on an inner wall of the through hole, and a heat insulating material provided inside the through hole and surrounded by the conductive film in plan view. The conductive film allows the first circuit pattern and the second circuit pattern to be conductive.

Abstract: A vehicle cooling system includes a circulation flow path section which has a first flow path section and a second flow path section, and a solenoid valve which can switch between an open state in which the first flow path section and the second flow path section are connected and a closed state in which the first flow path section and the second flow path section are blocked. The circulation flow path section includes a valve body accommodating section configured to include a first accommodating section and a second accommodating section which connects the first flow path section and the second flow path section in the open state, and a connection flow path section whose one end is connected to the first flow path section. The other end of the connection flow path section opens to the first accommodating section.

Abstract: Decorative sheets having improved or even excellent adhesiveness and heat and moisture resistance. A decorative sheet includes at least a substrate layer, an adhesive layer, and a transparent resin layer, which are laminated in this order. The adhesive layer contains a polyester resin and a bisphenol A epoxy resin. The polyester resin contains, as components, phthalic acid, a linear dicarboxylic acid, and an alkylenediol. The polyester resin and the bisphenol A epoxy resin are contained in the adhesive layer in a mass ratio (polyester resin/bisphenol A epoxy resin) of 50/50 to 90/10.

Abstract: According to the present invention, a semiconductor device includes an insulating substrate having an organic insulating layer and a circuit pattern provided on the organic insulating layer; and a semiconductor chip provided on an upper surface of the circuit pattern, wherein a thickness of the circuit pattern is not less than 1 mm and not more than 3 mm. According to the present invention, a method for manufacturing a semiconductor device includes forming a metal layer with a thickness not less than 1 mm and not more than 3 mm on an organic insulating layer; patterning the metal layer by machining processing to form a circuit pattern; and providing a semiconductor chip on an upper surface of the circuit pattern.

Abstract: A solenoid valve includes a solenoid including a guide, a mover that moves in an axial direction radially inside the guide, a yoke made of a magnetic material and disposed on one axial side of the mover, a magnet on one axial side of the yoke, an elastic body that applies an elastic force to the mover in the direction away from the magnet, a cover made of a magnetic material, a pin which moves as the mover moves, and a valve that is opened and closed as the mover and the pin move. The cover includes a cylinder surrounding the radial outside of the solenoid, a first wall on the other axial side of the solenoid, and a second wall that covers one axial side of the magnet.

Abstract: A protective film containing a transparent polyolefin resin layer with improved or even superior weather resistance, and a sheet using the protective film. A protective film according to the present embodiment includes at least a transparent polyolefin resin layer. The transparent polyolefin resin layer contains a hindered amine light stabilizer represented by general formula (I) below in a range of 0.05 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of a transparent olefin resin included in the transparent polyolefin resin layer. (In general formula (I), R is an alkyl group having 1-18 carbon atoms, or a cycloalkyl group having 5-8 carbon atoms.

Abstract: A protective film that includes at least one of a transparent polyolefin resin layer and a surface protection layer, and that has excellent weather resistance and a low level of white turbidity, which is a factor that impairs design properties; and a sheet using the protective film. The protective film comprises at least a transparent polyolefin resin layer, wherein the transparent polyolefin resin layer contains a first hydroxyphenyltriazine-based ultraviolet absorber (UVA-A) having a structure represented by the general formula below. In the general formula, R1-R3 each independently represent a hydrogen atom, a methyl group, a phenyl group, or an alkoxy group, and at least two of R1-R3 are an alkoxy group having 8-18 carbon atoms, R4 and R5 each independently represent a hydroxyl group, a methyl group, or a hydrogen atom, and R6-R8 each independently represent a methyl group or a hydrogen atom.

Abstract: According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

Abstract: A semiconductor device according to the present invention includes a relay substrate provided on a plurality of semiconductor chips. The relay substrate includes an insulating plate in which a through hole is formed, a lower conductor provided on a lower surface of the insulating plate and having a first lower conductor and a second lower conductor, an upper conductor provided on an upper surface of the insulating plate, a connection part provided in the through hole and connecting the second lower conductor and the upper conductor together, and a protruding part which is a part of one of the first lower conductor and the upper conductor and protrudes outward from the insulating plate, the protruding part is connected to a first external electrode, and another of the first lower conductor and the upper conductor is connected to a second external electrode and is positioned inside the insulating plate.

Abstract: A semiconductor apparatus includes: a substrate including a circuit pattern on an upper surface side and a metal plate on a lower surface side; a semiconductor device joined to the circuit pattern via a conductive component; a case located to surround the substrate; a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and a bonding agent bonding the case and the metal plate on a side face of the substrate.

Abstract: A technique for activating a fuse function in a semiconductor device in a relatively short time is provided. The semiconductor device includes a second bonding material provided on the upper surface of the insulating substrate, a third bonding material provided on an upper surface of the semiconductor element, a through hole extending from the first circuit pattern to the second circuit pattern via the core material, a conductive film provided on an inner wall of the through hole, and a heat insulating material provided inside the through hole and surrounded by the conductive film in plan view. The conductive film allows the first circuit pattern and the second circuit pattern to be conductive.

Abstract: According to the present invention, a semiconductor device includes an insulating substrate having an organic insulating layer and a circuit pattern provided on the organic insulating layer; and a semiconductor chip provided on an upper surface of the circuit pattern, wherein a thickness of the circuit pattern is not less than 1 mm and not more than 3 mm. According to the present invention, a method for manufacturing a semiconductor device includes forming a metal layer with a thickness not less than 1 mm and not more than 3 mm on an organic insulating layer; patterning the metal layer by machining processing to form a circuit pattern; and providing a semiconductor chip on an upper surface of the circuit pattern.