Abstract: This image sensor includes a flexible wiring board connected with an optical sensor, bent around the portion connected with the optical sensor and so formed as to generate urging force oppositely to the bent direction and a support portion having a first support surface supporting the optical sensor. The optical sensor is urged toward the first support surface of the support portion to be fixed thereto due to the urging force of the flexible wiring board arranged in the bent manner.

Abstract: A powder for a powder magnetic core, a powder magnetic core, and methods of producing those products are provided, so that mechanical strength of a powder magnetic core can be enhanced by hydrosilylation reaction between vinylsilane and hydrosilane without degrading magnetic properties. The powder for a powder magnetic core is composed of magnetic particles 2 having a surface 21 coated with an insulating layer 3, wherein the insulating layer 3 includes a polymer resin insulating layer 33 comprising vinylsilane 4 and hydrosilane.

Abstract: In this image sensor, a first spring member is so arranged that the urging direction of the first spring member is inclined with respect to the axis of a first rotating shaft of a first driving source thereby inclining a transmission member urged by the first spring member with respect to the axis of the first rotating shaft and bringing the transmission member into contact with a first pressing member engaging with the first rotating shaft, so that the first pressing member engages with the first rotating shaft while the axis of the first pressing member is inclined with respect to the axis of the first rotating shaft.

Abstract: Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.

Abstract: An arm structure includes a first arm pivotally supported on a body, and a second arm pivotally supported on the first arm at an axis portion formed s on a distal end side of the first arm. A wire harness fixing portion for fixing a wire harness is provided at a distal end side of the second arm. A guide portion having a curved face for guiding the wire harness is provided at an end portion at an end side of the second arm, the end side being opposite to the distal end side. A width of the guide portion is larger than a width of a portion of the second arm corresponding to the axis portion, in a width direction perpendicular to a longitudinal direction of the second arm.

Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode.

Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

Abstract: An electric rice cooker capable of increasing the water content of rice by a simple structure. The electric rice cooker (1) has a pot (10) in which food substances to be cooked including water and rice are contained, heating device (5, 6, 19) for heating the food substances to be cooked in the pot, a lid (11) for closing the opening of the pot, and a controller (9) for performing rice cooking steps including a water absorption step for allowing the rice to absorb the water by controlling the heating devices. The controller (9) raises the internal pressure of the pot (10) to 1.05-1.18 atm in the water absorbing step to allow the rice to absorb the water.

Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Abstract: Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

Abstract: A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

Abstract: A method for producing a powder for a magnetic core, in which an alkoxide film formation step and a silicone resin film formation step are carried out to form an insulation film composed of an alkoxide film and a silicone resin film on the surface of a pure iron powder, wherein the alkoxide film formation step comprises immersing a pure iron powder in an alkoxide-containing solution which is prepared by mixing a Si alkoxide having at least one organic group having a polar group comprising at least one of N, P, S and O atoms and an Al alkoxide with a dehydrated organic solvent, and drying to remove the dehydrated organic solvent, thereby forming an alkoxide film comprising an Al—Si—O type composite oxide on the surface of the pure iron powder; and the silicone resin film formation step comprises immersing the pure iron powder having the alkoxide film formed thereon in a silicone resin-containing solution which is prepared by mixing a silicone resin with an organic solvent, and drying to remove the organic solv

Abstract: Since a surface of an iron powder is covered with an oxide film composed of a Si-based oxide in which the ratio of Si to Fe satisfies Si/Fe?0.8 on an atomic number basis, an iron powder for dust cores is provided which can be formed into a dust core having a high resistivity and hence having a low iron loss without degrading the mechanical strength.

Abstract: Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)? to ? [?: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than ?/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Abstract: A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

Abstract: In this image sensor, a first spring member is so arranged that the urging direction of the first spring member is inclined with respect to the axis of a first rotating shaft of a first driving source thereby inclining a transmission member urged by the first spring member with respect to the axis of the first rotating shaft and bringing the transmission member into contact with a first pressing member engaging with the first rotating shaft, so that the first pressing member engages with the first rotating shaft while the axis of the first pressing member is inclined with respect to the axis of the first rotating shaft.

Abstract: This image sensor includes a flexible wiring board connected with an optical sensor, bent around the portion connected with the optical sensor and so formed as to generate urging force oppositely to the bent direction and a support portion having a first support surface supporting the optical sensor. The optical sensor is urged toward the first support surface of the support portion to be fixed thereto due to the urging force of the flexible wiring board arranged in the bent manner.

Abstract: A fly-eye lens includes multiple sub-lenses laid out in a matrix form, wherein a part of the lens surface of one sub-lens of the multiple sub-lenses has an oddly-shaped part having a different shape from the shape of the lens surface of the other sub-lenses.

Abstract: A projection type display system able to suppress an increase of a outer size of a set, able to improve the contrast, and excellent in silence, having light modulating units 122 (R, G, B) for modulating incident illumination lights based on input image information and emitting the result, an illumination optical system 109 for making illumination lights from a light source 101 strike light modulating units, and a projection optical system 125 for projecting the illumination lights emitted from the light modulating units, wherein a variable opening aperture system 200 is arranged in the vicinity of a pupil position of the projection optical system 125, and the aperture system 200 is arranged so as to match contrast characteristics of the light modulating units and an aperture shape at the time of opening/closing the aperture.