Abstract: An iron powder for dust cores is provided which can be formed into a dust core having a high resistivity and having a low iron loss without degrading the mechanical strength. The iron powder for dust cores includes an iron powder and an oxide film on the surface thereof, wherein the oxide film is composed of a Si-based oxide in which the ratio of Si to Fe satisfies Si/Fe?0.8 on an atomic number basis.

Abstract: A powder for a powder magnetic core, a powder magnetic core, and methods of producing those products are provided, so that mechanical strength of a powder magnetic core can be enhanced by hydrosilylation reaction between vinylsilane and hydrosilane without degrading magnetic properties. The powder for a powder magnetic core is composed of magnetic particles 2 having a surface 21 coated with an insulating layer 3, wherein the insulating layer 3 includes a polymer resin insulating layer 33 comprising vinylsilane 4 and hydrosilane.

Abstract: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

Abstract: The present invention discloses a composite soft magnetic powder core and a preparation method therefor, which belong to the technical fields of soft magnetic materials and preparation thereof. An Fe/Fe3O4 shell layer is generated in situ on surfaces of iron powder particles through a controlled oxidation process, to prepare Fe/Fe3O4 composite soft magnetic powder having a uniform structure. The Fe/Fe3O4 composite soft magnetic powder is mixed with suitable amount of silicone resin, and prepared into a high-performance Fe/Fe3O4 composite soft magnetic powder core by using a powder metallurgy compaction process. Such magnetic powder core has a high density, a high magnetic conductivity, a high magnetic flux density, a low loss, and a high breaking strength, and is useful in a large-power and low-loss application scenario. The present invention has the advantages of being rich in raw material resources, simple in process and environmentally friendly, and being suitable for industrial production.

Abstract: A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)? to ? [?: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than ?/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Abstract: Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.

Abstract: The invention includes: powder preparation step of obtaining magnetic core powders by mixing, of magnetic powders with thermosetting resin powders in hot state; powder filling step of filling the obtained magnetic core powders into a die; a compaction step of compacting magnetic core powders; and compact heating step of heating, compacts to the elevated temperature state at which the thermosetting resin hardens after compaction.

Abstract: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

Abstract: An arm structure includes a first arm pivotally supported on a body, and a second arm pivotally supported on the first arm at an axis portion formed on a distal end side of the first arm. A wire harness fixing portion for fixing a wire harness is provided at a distal end side of the second arm. A guide portion having a curved face for guiding the wire harness is provided at an end portion at an end side of the second arm, the end side being opposite to the distal end side. A width of the guide portion is larger than a width of a portion of the second arm corresponding to the axis portion, in a width direction perpendicular to a longitudinal direction of the second arm.

Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode.

Abstract: A control device for a vehicular differential limiting apparatus is provided, for applying differential limiting torques to a left drive wheel and a right drive wheel of a vehicle during startup and running thereof with favorably suppressing occurrence of deflection of the vehicle.

Abstract: A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

Abstract: Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

Abstract: This image sensor includes a flexible wiring board connected with an optical sensor, bent around the portion connected with the optical sensor and so formed as to generate urging force oppositely to the bent direction and a support portion having a first support surface supporting the optical sensor. The optical sensor is urged toward the first support surface of the support portion to be fixed thereto due to the urging force of the flexible wiring board arranged in the bent manner.

Abstract: A powder for a powder magnetic core, a powder magnetic core, and methods of producing those products are provided, so that mechanical strength of a powder magnetic core can be enhanced by hydrosilylation reaction between vinylsilane and hydrosilane without degrading magnetic properties. The powder for a powder magnetic core is composed of magnetic particles 2 having a surface 21 coated with an insulating layer 3, wherein the insulating layer 3 includes a polymer resin insulating layer 33 comprising vinylsilane 4 and hydrosilane.

Abstract: In this image sensor, a first spring member is so arranged that the urging direction of the first spring member is inclined with respect to the axis of a first rotating shaft of a first driving source thereby inclining a transmission member urged by the first spring member with respect to the axis of the first rotating shaft and bringing the transmission member into contact with a first pressing member engaging with the first rotating shaft, so that the first pressing member engages with the first rotating shaft while the axis of the first pressing member is inclined with respect to the axis of the first rotating shaft.

Abstract: Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.