Abstract: An on-vehicle interface apparatus includes a touch screen and an I/F controller. The I/F controller stores a first message and a second message having a lower urgency level in association with respective events. The I/F controller displays operation switches including operation switches regarding traveling of a vehicle irrespectively of the events on the touch screen, and, in response to occurrence of an event, displays a corresponding message on the touch screen. The I/F controller, in response to detection of a touch operation on a display region of the first message during display of the first message, outputs to the vehicle controller a signal that instructs execution of the driving control corresponding to the first message.

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a first well of a first conductivity type in a surface region that comprises a surface of the semiconductor substrate; a first impurity region of a second conductivity type in a region of a surface of the first well; a second impurity region of the second conductivity type, a portion of the first well being located between the second impurity region and the first impurity region in the surface region of the semiconductor substrate; a first insulating body on the surface of the semiconductor substrate; a gate electrode extending over part of the first well and part of the second impurity region on the first insulating body; a second insulating body extending on an upper surface of the gate electrode and over a region above the second impurity region; and a first conductive body on the second insulating body.

Abstract: A printing apparatus includes: a printing unit configured to perform printing on a medium; a conveyance unit configured to convey the medium; a winding unit configured to wind up the medium after printing; and a prompting unit configured to prompt a user to fix a leading end of the medium to a winding core material in response to the leading end of the medium reaching a prompting position located downstream of the printing position in the printing unit.

Abstract: A printing apparatus includes: a printing unit configured to perform printing on a medium; a conveyance unit configured to convey the medium; a winding unit configured to wind up the medium after printing; and a stopping unit configured to stop conveyance of the medium by the conveyance unit in response to a break of a printed image reaching a printing position in the printing unit in a state where a leading end of the medium is located in a fixing work range.

Abstract: This wireless communication device is equipped with: an acquisition unit for acquiring, from an onboard network of a work vehicle, an in-vehicle signal that travels through the onboard network; and a control unit for controlling wireless communication between the work vehicle and a portable terminal, and transmitting the acquired in-vehicle signal to the portable terminal. As a result, it is possible to provide a wireless communication device with which a worker can verify the status of the work vehicle from outside the work vehicle.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the semiconductor substrate, a first deep semiconductor region of a second conductivity type provided between the semiconductor substrate and the semiconductor layer, a first guard ring region of the second conductivity type, a first separation region of the second conductivity type contacting the first guard ring region and the first deep semiconductor region, a first semiconductor region of the first conductivity type, and a second semiconductor region of the first conductivity type; the first guard ring region and the first deep semiconductor region surround a first device part of the semiconductor layer; the first separation region partitions the first device part into a first region and a second region; and the first and second semiconductor regions are provided in the first and second regions.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type; a semiconductor layer located on the semiconductor substrate, the semiconductor layer being of the first conductivity type and including a first device part; a buried layer located between the semiconductor substrate and the first device part, the buried layer being of a second conductivity type; a guard region located at a first-direction side of the first device part, the guard region being of the second conductivity type, a lower end of the guard region contacting the buried layer, an upper end of the guard region reaching an upper surface of the semiconductor layer, the guard region not being located at a second-direction side of the first device part, the second direction being opposite to the first direction; and a first semiconductor region located inside the first device part and being of the second conductivity type.

Abstract: An image forming apparatus includes: a display controller that displays an operation screen including a function button for executing a function on a display section; a press determination section that determines whether the function button is short pressed or long pressed; when the press determination section determines that the function button is short pressed, a function execution section that executes the function; and when the press determination section determines that the function button is long pressed, an execute privilege setting section that sets an execute privilege of the function from a plurality of types of execute privileges in accordance with a long press time of the function button.

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a first well of a first conductivity type in a surface region that comprises a surface of the semiconductor substrate; a first impurity region of a second conductivity type in a region of a surface of the first well; a second impurity region of the second conductivity type, a portion of the first well being located between the second impurity region and the first impurity region in the surface region of the semiconductor substrate; a first insulating body on the surface of the semiconductor substrate; a gate electrode extending over part of the first well and part of the second impurity region on the first insulating body; a second insulating body extending on an upper surface of the gate electrode and over a region above the second impurity region; and a first conductive body on the second insulating body.

Abstract: A method for determining a negative electrode capacity of a rechargeable battery is performed by a measurement device that includes a voltage detector that detects a voltage value of the rechargeable battery, a current detector that detects a current value of the rechargeable battery, and a state of charge detector that detects a state of charge of the rechargeable battery. The method includes calculating an absolute value of a voltage slope indicating a voltage change amount with respect to a discharge amount when the state of charge of the rechargeable battery is less than 40%, comparing the absolute value of the voltage slope with a preset lower limit, and determining that the negative electrode capacity of the rechargeable battery has decreased when the absolute value of the voltage slope is less than or equal to the lower limit.

Abstract: This wireless communication device is equipped with: a communication control unit for wirelessly connecting a work vehicle and a portable terminal with one another, an acquisition unit which is connected to a work vehicle onboard network, and acquires, from the work vehicle, work vehicle identification information for identifying the work vehicle; a generation unit for generating first character string data on the basis of the work vehicle identification information; and a setting unit for setting the generated first character string data to as a network name the communication control unit.

Abstract: A semiconductor device includes a semiconductor part having a recess formed in an upper surface thereof, an insulating member provided in a portion of the recess, a first electrode, a gate insulating film thinner than the insulating member. The first electrode includes a first part provided in another portion of the recess, and a second part provided higher than the insulating member. The gate insulating film is provided between the semiconductor part and the first part. The semiconductor part includes a first layer of a first conductivity type contacting the gate insulating film, second and third layers of a second conductivity type contacting the first layer and being connected to a source contact and a drain contact. The recess is positioned between the source contact and the drain contact when viewed from above. The insulating member is provided between the first part and the third layer.

Abstract: A communication device according to an embodiment includes an interpreter, a storage, and a generator. The interpreter is configured to interpret a content of a message addressed to a target user. The storage stores information on a personal feature of the target user. The generator is configured to generate a response message simulating a response by the target user on the basis of the content of the message addressed to the target user, which is interpreted by the interpreter, and the information on the personal feature of the target user stored in the storage.

Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.

Abstract: A semiconductor device includes a semiconductor part having a recess formed in an upper surface thereof, an insulating member provided in a portion of the recess, a first electrode, a gate insulating film thinner than the insulating member. The first electrode includes a first part provided in another portion of the recess, and a second part provided higher than the insulating member. The gate insulating film is provided between the semiconductor part and the first part. The semiconductor part includes a first layer of a first conductivity type contacting the gate insulating film, second and third layers of a second conductivity type contacting the first layer and being connected to a source contact and a drain contact. The recess is positioned between the source contact and the drain contact when viewed from above. The insulating member is provided between the first part and the third layer.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the semiconductor substrate, a first deep semiconductor region of a second conductivity type provided between the semiconductor substrate and the semiconductor layer, a first guard ring region of the second conductivity type, a first separation region of the second conductivity type contacting the first guard ring region and the first deep semiconductor region, a first semiconductor region of the first conductivity type, and a second semiconductor region of the first conductivity type; the first guard ring region and the first deep semiconductor region surround a first device part of the semiconductor layer; the first separation region partitions the first device part into a first region and a second region; and the first and second semiconductor regions are provided in the first and second regions.

Abstract: A battery state estimation device for estimating a charged electric charge quantity of a rechargeable battery includes an impedance measurement unit configured to measure a plurality of complex impedances of the rechargeable battery by supplying measurement power to the rechargeable battery, a parameter calculation unit configured to calculate a parameter that includes a ratio of a difference between measurement angular velocities of two complex impedances in a diffusion region among the measured complex impedances to a difference between components of the two complex impedances, and an electric charge quantity estimation unit configured to estimate a charged electric charge quantity of the rechargeable battery based on the calculated parameter and preset correlated information between the charged electric charge quantity of the rechargeable battery and the parameter.

Abstract: This wireless communication device is equipped with: a communication control unit for wirelessly connecting a work vehicle and a portable terminal with one another, an acquisition unit which is connected to a work vehicle onboard network, and acquires, from the work vehicle, work vehicle identification information for identifying the work vehicle; a generation unit for generating first character string data on the basis of the work vehicle identification information; and a setting unit for setting the generated first character string data to as a network name the communication control unit.

Abstract: This wireless communication device is equipped with: an acquisition unit for acquiring, from an onboard network of a work vehicle, an in-vehicle signal that travels through the onboard network; and a control unit for controlling wireless communication between the work vehicle and a portable terminal, and transmitting the acquired in-vehicle signal to the portable terminal. As a result, it is possible to provide a wireless communication device with which a worker can verify the status of the work vehicle from outside the work vehicle.

Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.