Patents by Inventor Daisuke Shinohara

Daisuke Shinohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11939404
    Abstract: Cyclized peptides having a crosslinked structure by one or more intramolecular S—S bonds may be prepared by: (1-A) as to a completely protected linear peptide having two or more SH groups as functional groups on the peptide, removing protecting groups of all functional groups other than the protected SH groups in the peptide, (1-B) protecting all SH groups of the linear peptide having two or more SH groups as the functional groups on the peptide by forming a temporary S—S bond, and (2) subjecting the peptide obtained by step (1-A) and step (1-B) to a folding step under oxidation and reduction conditions to obtain the cyclized peptide by re-forming an S—S bond in the peptide molecule.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: March 26, 2024
    Assignee: AJINOMOTO CO., INC.
    Inventors: Daisuke Takahashi, Tatsuji Inomata, Yuki Shinohara
  • Publication number: 20230299129
    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type; a semiconductor layer located on the semiconductor substrate, the semiconductor layer being of the first conductivity type and including a first device part; a buried layer located between the semiconductor substrate and the first device part, the buried layer being of a second conductivity type; a guard region located at a first-direction side of the first device part, the guard region being of the second conductivity type, a lower end of the guard region contacting the buried layer, an upper end of the guard region reaching an upper surface of the semiconductor layer, the guard region not being located at a second-direction side of the first device part, the second direction being opposite to the first direction; and a first semiconductor region located inside the first device part and being of the second conductivity type.
    Type: Application
    Filed: September 8, 2022
    Publication date: September 21, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Kanako KOMATSU, Yoshiaki ISHII, Daisuke SHINOHARA
  • Publication number: 20230280897
    Abstract: An image forming apparatus includes: a display controller that displays an operation screen including a function button for executing a function on a display section; a press determination section that determines whether the function button is short pressed or long pressed; when the press determination section determines that the function button is short pressed, a function execution section that executes the function; and when the press determination section determines that the function button is long pressed, an execute privilege setting section that sets an execute privilege of the function from a plurality of types of execute privileges in accordance with a long press time of the function button.
    Type: Application
    Filed: March 1, 2023
    Publication date: September 7, 2023
    Inventor: Daisuke SHINOHARA
  • Publication number: 20230087733
    Abstract: According to one embodiment, a semiconductor device includes: a semiconductor substrate; a first well of a first conductivity type in a surface region that comprises a surface of the semiconductor substrate; a first impurity region of a second conductivity type in a region of a surface of the first well; a second impurity region of the second conductivity type, a portion of the first well being located between the second impurity region and the first impurity region in the surface region of the semiconductor substrate; a first insulating body on the surface of the semiconductor substrate; a gate electrode extending over part of the first well and part of the second impurity region on the first insulating body; a second insulating body extending on an upper surface of the gate electrode and over a region above the second impurity region; and a first conductive body on the second insulating body.
    Type: Application
    Filed: March 3, 2022
    Publication date: March 23, 2023
    Inventors: Kanako KOMATSU, Daisuke SHINOHARA
  • Publication number: 20220214404
    Abstract: A method for determining a negative electrode capacity of a rechargeable battery is performed by a measurement device that includes a voltage detector that detects a voltage value of the rechargeable battery, a current detector that detects a current value of the rechargeable battery, and a state of charge detector that detects a state of charge of the rechargeable battery. The method includes calculating an absolute value of a voltage slope indicating a voltage change amount with respect to a discharge amount when the state of charge of the rechargeable battery is less than 40%, comparing the absolute value of the voltage slope with a preset lower limit, and determining that the negative electrode capacity of the rechargeable battery has decreased when the absolute value of the voltage slope is less than or equal to the lower limit.
    Type: Application
    Filed: December 23, 2021
    Publication date: July 7, 2022
    Applicant: PRIMEARTH EV ENERGY CO., LTD.
    Inventors: Daisuke SHINOHARA, Daisuke KOBA
  • Patent number: 11363431
    Abstract: This wireless communication device is equipped with: a communication control unit for wirelessly connecting a work vehicle and a portable terminal with one another, an acquisition unit which is connected to a work vehicle onboard network, and acquires, from the work vehicle, work vehicle identification information for identifying the work vehicle; a generation unit for generating first character string data on the basis of the work vehicle identification information; and a setting unit for setting the generated first character string data to as a network name the communication control unit.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: June 14, 2022
    Assignee: TADANO LTD.
    Inventors: Kazuhisa Onishi, Daisuke Shinohara
  • Patent number: 11271105
    Abstract: A semiconductor device includes a semiconductor part having a recess formed in an upper surface thereof, an insulating member provided in a portion of the recess, a first electrode, a gate insulating film thinner than the insulating member. The first electrode includes a first part provided in another portion of the recess, and a second part provided higher than the insulating member. The gate insulating film is provided between the semiconductor part and the first part. The semiconductor part includes a first layer of a first conductivity type contacting the gate insulating film, second and third layers of a second conductivity type contacting the first layer and being connected to a source contact and a drain contact. The recess is positioned between the source contact and the drain contact when viewed from above. The insulating member is provided between the first part and the third layer.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: March 8, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Daisuke Shinohara
  • Patent number: 11144713
    Abstract: A communication device according to an embodiment includes an interpreter, a storage, and a generator. The interpreter is configured to interpret a content of a message addressed to a target user. The storage stores information on a personal feature of the target user. The generator is configured to generate a response message simulating a response by the target user on the basis of the content of the message addressed to the target user, which is interpreted by the interpreter, and the information on the personal feature of the target user stored in the storage.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: October 12, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Digital Solutions Corporation
    Inventors: Daisuke Shinohara, Kazuhiko Abe, Hideki Ibi, Megumi Kobayashi, Satoko Kikuchi, Tomoko Takeyama, Masaya Hirabara, Tomoya Minatani, Michinari Kino, Yuki Kawakami, Yuji Tanaka
  • Patent number: 11121247
    Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: September 14, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran
  • Publication number: 20210193833
    Abstract: A semiconductor device includes a semiconductor part having a recess formed in an upper surface thereof, an insulating member provided in a portion of the recess, a first electrode, a gate insulating film thinner than the insulating member. The first electrode includes a first part provided in another portion of the recess, and a second part provided higher than the insulating member. The gate insulating film is provided between the semiconductor part and the first part. The semiconductor part includes a first layer of a first conductivity type contacting the gate insulating film, second and third layers of a second conductivity type contacting the first layer and being connected to a source contact and a drain contact. The recess is positioned between the source contact and the drain contact when viewed from above. The insulating member is provided between the first part and the third layer.
    Type: Application
    Filed: July 28, 2020
    Publication date: June 24, 2021
    Inventor: Daisuke Shinohara
  • Publication number: 20210143253
    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the semiconductor substrate, a first deep semiconductor region of a second conductivity type provided between the semiconductor substrate and the semiconductor layer, a first guard ring region of the second conductivity type, a first separation region of the second conductivity type contacting the first guard ring region and the first deep semiconductor region, a first semiconductor region of the first conductivity type, and a second semiconductor region of the first conductivity type; the first guard ring region and the first deep semiconductor region surround a first device part of the semiconductor layer; the first separation region partitions the first device part into a first region and a second region; and the first and second semiconductor regions are provided in the first and second regions.
    Type: Application
    Filed: July 13, 2020
    Publication date: May 13, 2021
    Inventors: Mariko Yamashita, Kanako Komatsu, Yoshiaki Ishii, Daisuke Shinohara
  • Patent number: 10976372
    Abstract: A battery state estimation device for estimating a charged electric charge quantity of a rechargeable battery includes an impedance measurement unit configured to measure a plurality of complex impedances of the rechargeable battery by supplying measurement power to the rechargeable battery, a parameter calculation unit configured to calculate a parameter that includes a ratio of a difference between measurement angular velocities of two complex impedances in a diffusion region among the measured complex impedances to a difference between components of the two complex impedances, and an electric charge quantity estimation unit configured to estimate a charged electric charge quantity of the rechargeable battery based on the calculated parameter and preset correlated information between the charged electric charge quantity of the rechargeable battery and the parameter.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: April 13, 2021
    Assignee: PRIMEARTH EV ENERGY CO., LTD.
    Inventors: Daisuke Koba, Yosuke Murota, Shinobu Minatani, Hiroki Nakafuji, Daisuke Shinohara, Tetsuya Osaka
  • Publication number: 20200367038
    Abstract: This wireless communication device is equipped with: a communication control unit for wirelessly connecting a work vehicle and a portable terminal with one another, an acquisition unit which is connected to a work vehicle onboard network, and acquires, from the work vehicle, work vehicle identification information for identifying the work vehicle; a generation unit for generating first character string data on the basis of the work vehicle identification information; and a setting unit for setting the generated first character string data to as a network name the communication control unit.
    Type: Application
    Filed: January 24, 2019
    Publication date: November 19, 2020
    Applicant: TADANO LTD.
    Inventors: Kazuhisa ONISHI, Daisuke SHINOHARA
  • Publication number: 20200357202
    Abstract: This wireless communication device is equipped with: an acquisition unit for acquiring, from an onboard network of a work vehicle, an in-vehicle signal that travels through the onboard network; and a control unit for controlling wireless communication between the work vehicle and a portable terminal, and transmitting the acquired in-vehicle signal to the portable terminal. As a result, it is possible to provide a wireless communication device with which a worker can verify the status of the work vehicle from outside the work vehicle.
    Type: Application
    Filed: January 25, 2019
    Publication date: November 12, 2020
    Applicant: TADANO LTD.
    Inventors: Kazuhisa ONISHI, Daisuke SHINOHARA
  • Publication number: 20200303537
    Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.
    Type: Application
    Filed: September 16, 2019
    Publication date: September 24, 2020
    Inventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran
  • Patent number: 10573743
    Abstract: A semiconductor device includes a first semiconductor region, a second semiconductor region, an insulating film, and first and second electrodes provided on the insulating film. The insulating film includes first to fourth portions. The first portion is disposed in a region including the region directly above the first semiconductor region. The second portion is disposed at a portion of the region directly above the second semiconductor region. The second portion is thicker than the first portion. The third portion is thinner than the second portion and thicker than the first portion. The fourth portion is thicker than the third portion. The first electrode is disposed in at least a region directly above the first portion. The second electrode is disposed in at least a region directly above the third portion.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: February 25, 2020
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Daisuke Shinohara
  • Publication number: 20190288108
    Abstract: A semiconductor device includes a first semiconductor region, a second semiconductor region, an insulating film, and first and second electrodes provided on the insulating film. The insulating film includes first to fourth portions. The first portion is disposed in a region including the region directly above the first semiconductor region. The second portion is disposed at a portion of the region directly above the second semiconductor region. The second portion is thicker than the first portion. The third portion is thinner than the second portion and thicker than the first portion. The fourth portion is thicker than the third portion. The first electrode is disposed in at least a region directly above the first portion. The second electrode is disposed in at least a region directly above the third portion.
    Type: Application
    Filed: September 12, 2018
    Publication date: September 19, 2019
    Inventor: Daisuke Shinohara
  • Publication number: 20190220505
    Abstract: A communication device according to an embodiment includes an interpreter, a storage, and a generator. The interpreter is configured to interpret a content of a message addressed to a target user. The storage stores information on a personal feature of the target user. The generator is configured to generate a response message simulating a response by the target user on the basis of the content of the message addressed to the target user, which is interpreted by the interpreter, and the information on the personal feature of the target user stored in the storage.
    Type: Application
    Filed: March 26, 2019
    Publication date: July 18, 2019
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Digital Solutions Corporation
    Inventors: Daisuke SHINOHARA, Kazuhiko Abe, Hideki Ibi, Megumi Kobayashi, Satoko Kikuchi, Tomoko Takeyama, Masaya Hirabara, Tomoya Minatani, Michinari Kino, Yuki Kawakami, Yuji Tanaka
  • Publication number: 20190195960
    Abstract: A battery state estimation device for estimating a charged electric charge quantity of a rechargeable battery includes an impedance measurement unit configured to measure a plurality of complex impedances of the rechargeable battery by supplying measurement power to the rechargeable battery, a parameter calculation unit configured to calculate a parameter that includes a ratio of a difference between measurement angular velocities of two complex impedances in a diffusion region among the measured complex impedances to a difference between components of the two complex impedances, and an electric charge quantity estimation unit configured to estimate a charged electric charge quantity of the rechargeable battery based on the calculated parameter and preset correlated information between the charged electric charge quantity of the rechargeable battery and the parameter.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 27, 2019
    Applicant: PRIMEARTH EV ENERGY CO., LTD.
    Inventors: Daisuke KOBA, Yosuke MUROTA, Shinobu MINATANI, Hiroki NAKAFUJI, Daisuke SHINOHARA, Tetsuya OSAKA
  • Patent number: 9998617
    Abstract: An electronic apparatus is provided in which, upon reception of a change of a setting value of a first setting item on a first setting page, if incompatibility occurs between a setting value of the first setting item on the first setting page and a setting value of a second setting item on a second setting page, which is the second setting item not currently included in a display immediately after switching to the second setting page, the second setting item is displayed on a display unit immediately after the switching to the second setting page.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: June 12, 2018
    Assignee: Seiko Epson Corporation
    Inventor: Daisuke Shinohara