Abstract: An electrophotographic apparatus does not have a unit for maintaining a uniform surface temperature of an electrophotographic photosensitive member through its surface. The electrophotographic photosensitive member has temperature dependent characteristics and is equally divided into two regions in a cylindrical shaft direction such that absolute values of the temperature dependence of the photosensitive-member characteristics in the two regions are not the same. The electrophotographic photosensitive member is arranged so that when, among the two regions, a region which has a smaller absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a first region, and a region which has a larger absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a second region.

Abstract: An image-forming method uses an electrophotographic photosensitive member having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

Abstract: An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10?Hx_ave?30, Hx<Hy, |Hx_ave?Hx|?5, and 2?Hy_ave?Hx_ave?12.

Abstract: An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2?0.07×DS?0.38??Expression (1) HPmax?0.04×DS+0.

Abstract: The present invention provides an electrophotographic photosensitive member including a photoconductive layer, an intermediate layer made of hydrogenated amorphous silicon carbide on the photoconductive layer, and a surface layer made of hydrogenated amorphous silicon carbide on the intermediate layer, wherein a ratio (C/(Si+C); C2) in the surface layer is 0.61 to 0.75, and a sum of atom density of silicon and carbon is 6.60×1022 atoms/cm3 or more, a ratio (C/(Si+C); C1) and a sum (D1) of atom density of silicon and carbon in the intermediate layer increase continuously from the photoconductive layer toward the surface layer without exceeding C2 and D2, and the intermediate layer has a continuous region in which C1 is 0.25 to C2 while D1 is 5.50×1022 to 6.45×1022 atoms/cm3, the region being 150 nm or larger in a layer thickness direction, and an electrophotographic apparatus equipped therewith.

Abstract: An electrophotographic photosensitive member includes a substrate, a photoconductive layer, an intermediate layer, and a surface layer sequentially formed. The intermediate layer contains silicon, carbon and hydrogen, and a distribution of a hydrogen ratio, which is a ratio of the number of hydrogen atoms to the number of silicon, carbon and hydrogen atoms, in the intermediate layer has a maximum region. A largest hydrogen atomic ratio in the intermediate layer is larger than a hydrogen atomic ratio in the surface layer, and the hydrogen atomic ratio in the surface layer is 0.30 to 0.45. A distribution of a carbon atomic ratio, which is a ratio of the number of carbon atoms to the number of silicon and carbon atoms, in the intermediate layer has a maximum and a minimum region. A carbon atomic ratio in the maximum region is 0.53 to 0.63, a carbon atomic ratio in the minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate layer is partially superimposed on the minimum carbon region.

Abstract: An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10?Hx_ave?30, Hx<Hy, |Hx_ave?Hx|?5, and 2?Hy_ave?Hx_ave?12. An electrophotographic apparatus having the electrophotographic photosensitive member is provided.

Abstract: An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

Abstract: The invention is an electrophotographic photosensitive member comprising a substrate, a photoconductive layer, an intermediate layer and a surface layer sequentially formed, wherein the intermediate contains silicon, carbon and hydrogen, a distribution of a hydrogen ratio which is a ratio of the number of hydrogen to the number of silicon, carbon and hydrogen in the intermediate has a maximum region, a largest hydrogen ratio in the intermediate is larger than a hydrogen ratio in the surface, the hydrogen ratio in the surface is 0.30 to 0.45, a distribution of a carbon ratio which is a ratio of the number of carbon to the number of silicon and carbon in the intermediate has a maximum and a minimum region, a carbon maximum region is 0.53 to 0.63, a carbon minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate is partially superimposed on the minimum carbon region.

Abstract: The present invention provides an electrophotographic photosensitive member including a photoconductive layer, an intermediate layer made of hydrogenated amorphous silicon carbide on the photoconductive layer, and a surface layer made of hydrogenated amorphous silicon carbide on the intermediate layer, wherein a ratio (C/(Si+C); C2) in the surface layer is 0.61 to 0.75, and a sum of atom density of silicon and carbon is 6.60×1022 atoms/cm3 or more, a ratio (C/(Si+C); C1) and a sum (D1) of atom density of silicon and carbon in the intermediate layer increase continuously from the photoconductive layer toward the surface layer without exceeding C2 and D2, and the intermediate layer has a continuous region in which C1 is 0.25 to C2 while D1 is 5.50×1022 to 6.45×1022 atoms/cm3, the region being 150 nm or larger in a layer thickness direction, and an electrophotographic apparatus equipped therewith.

Abstract: An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2?0.07×DS?0.38??Expression (1) HPmax?0.04×DS+0.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.

Abstract: A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.

Abstract: In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.