Patents by Inventor Daisuke Tazawa

Daisuke Tazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6443191
    Abstract: For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: September 3, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hitoshi Murayama, Tatsuyuki Aoike, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Takashi Ohtsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
  • Publication number: 20020038632
    Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.
    Type: Application
    Filed: July 6, 2001
    Publication date: April 4, 2002
    Inventors: Toshiyasu Shirasuna, Tatsuyuki Aoike, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
  • Publication number: 20020038630
    Abstract: In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation:
    Type: Application
    Filed: May 10, 2001
    Publication date: April 4, 2002
    Inventors: Takashi Otsuka, Tatsuyuki Aoike, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Hitoshi Murayama, Daisuke Tazawa, Kazuto Hosoi
  • Publication number: 20020029818
    Abstract: For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened.
    Type: Application
    Filed: April 26, 2001
    Publication date: March 14, 2002
    Inventors: Hitoshi Murayama, Tatsuyuki Aoike, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Takashi Ohtsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
  • Patent number: 6294299
    Abstract: An electrophotographic light-receiving member has a conductive support and a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table. The photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs 50-90% of incident image exposure light and a second layer region that absorbs 60-90% of pre-exposure light incident on the photoconductive layer. The Group IIIb element is present such that its content decreases from the conductive support side to the surface side. In three embodiments the photoconductive layer has, respectively: 10-30 at. % H; 10-20 at. % H and 25-40 at % H; an optical band gap of 1.75-1.85 eV, 1.65-1.75 eV and 1.80-1.90 eV and a characteristic energy of each of 50-55 meV.
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: September 25, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shinji Tsuchida, Hiroaki Niino, Satoshi Kojima, Daisuke Tazawa
  • Publication number: 20010009747
    Abstract: An electrophotographic light-receiving member is disclosed which comprises a conductive support; and a light-receiving layer provided on the conductive support and having a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table, wherein the photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs a specified range of amount of image exposure light incident on the photoconductive layer, a second layer region that is other than the third layer region of a layer region that absorbs a specified range of amount of pre-exposure light incident on the photoconductive layer, and a first layer region that is other than the third and the second layer regions of the photoconductive layer, and wherein the element belonging to Group IIIb of the periodic table is contained in the photoconductive layer such that the content of
    Type: Application
    Filed: August 20, 1998
    Publication date: July 26, 2001
    Inventors: SHINJI TSUCHIDA, HIROAKI NIINO, SATOSHI KOJIMA, DAISUKE TAZAWA
  • Patent number: 6250251
    Abstract: An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method capable of effectively preventing film peeling generated in a reaction vessel to provide a deposited film of excellent quality with reduced spherical projections. The present invention provides a vacuum processing apparatus or method utilizing a vessel, means for supplying a gas into the vessel and means for supplying an electric power and in which the gas is decomposed by the electric power to generate a discharge, wherein the surface of a member confronted with the discharge satisfies the conditions of (1) the ten-point mean roughness Rz with respect to a reference length of 2.5 mm according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 200 &mgr;m, and (2) the mean spacing S of adjacent local peaks according to the JIS standard being in a range of not smaller than 5 &mgr;m and not larger than 100 &mgr;m.
    Type: Grant
    Filed: March 31, 1999
    Date of Patent: June 26, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuyoshi Akiyama, Tatsuyuki Aoike, Toshiyasu Shirasuna, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi