Abstract: A ventilation assembly of the present disclosure includes: an internal member being a tubular body having an opening at a first end portion and an opening at a second end portion; an external member being a tubular body having a bottom; and a gas-permeable membrane covering the opening at the first end portion of the internal member, wherein the external member is joined to the internal member with the internal member inserted in the interior of the external member from the first end portion side, the ventilation assembly has a second space serving as a ventilation path connecting the gas-permeable membrane and the outside of the ventilation assembly in at least one selected from the inside of the internal member, the inside of the external member, and an interspace between the internal member and the external member joined together, and the internal member includes one first projecting portion or two or more first projecting portions projecting from the inner peripheral surface at a position on the second en

Abstract: The present invention provides a novel peptide that has an amino acid sequence represented by SEQ ID NO: 18, and binds to an active protease but does not bind to a pro-protease.

Abstract: A die support mechanism includes: a die holding member including a slit horizontally passing through the die holding member, wherein a lower side from the slit forms a die holding base configured to hold a blanking die having a punch hole, an upper side from the slit forms a ceiling portion having a ceiling hole concentric with the punch hole, a part of a sheet metal inserted in the slit is punched out as a blank by a blanking punch, and the ceiling portion separates the sheet metal from the blanking punch; a support base configured to horizontally slidably support the die holding member; and a guide portion formed on an inner surface of the ceiling hole and configured to come into sliding contact with the blanking punch and to slide the die holding member to a position where the punch hole is centered on the blanking punch.

Abstract: A problem to be solved by the present invention is to provide a magnetic recording medium having a jet-black magnetic stripe which is not tinged with red. The present invention is directed to a magnetic recording medium including: a magnetic recording layer on a substrate; and a protective layer (a) on the magnetic recording layer, wherein the protective layer (a) contains an aniline coloring material. The magnetic recording medium is advantageous in that the magnetic stripe is jet-black and has excellent design properties, and therefore can be widely used for credit cards, bank cards and the like.

Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A problem to be solved by the present invention is to provide a magnetic recording medium having a jet-black magnetic stripe which is not tinged with red. The present invention is directed to a magnetic recording medium including: a magnetic recording layer on a substrate; and a protective layer (a) on the magnetic recording layer, wherein the protective layer (a) contains an aniline coloring material. The magnetic recording medium is advantageous in that the magnetic stripe is jet-black and has excellent design properties, and therefore can be widely used for credit cards, bank cards and the like.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.

Abstract: Subject: A process for producing a magnetic recording medium, having a magnetic recording layer and a protective layer on a substrate which is a non-magnetic support, wherein the medium is able to greatly inhibit migration of a lubricant from the protective layer to the surface of the metal pressing plate having a mirrored finish in a hot pressing step during production of the magnetic recording medium, while maintaining satisfactory scratch resistance, suitable adhesion with the magnetic recording layer and the protective layer, and excellent read and write properties of the magnetic recording medium.

Abstract: To provide a card-like magnetic recording medium and a transferable laminate which can make a hologram distinctly recognizable and can prevent the occurrence of an ESD fault. In the card-like magnetic recording medium, on the magnetic recording layer 12 formed on the base material for a card 20, the transparent non-conductive deposited layer 14 and the transparent optical diffraction layer 15 are laminated in this order; between the magnetic recording layer 12 and the transparent non-conductive deposited layer 14, a reflective ink layer 13 which includes, at least, binder resin and metal flake, is formed; and a mass ratio of this binder resin/metal flake is set from 3 to 10.