Abstract: A magnetic sensor includes: at least one sensitive element including a soft magnetic material and having a longitudinal direction and a transverse direction and a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, the at least one sensitive element being configured to sense a magnetic field by a magnetic impedance effect; at least one protruding portion including a soft magnetic material and protruding in the longitudinal direction from a longitudinal end of the at least one sensitive element; and a guiding member disposed opposite the at least one protruding portion and made of a soft magnetic material, the guiding member being configured to guide magnetic field lines toward the at least one protruding portion.

Abstract: A magnetic sensor includes: a substrate; and a sensitive portion disposed on the substrate and having a longitudinal direction and a transverse direction. The sensitive portion senses a magnetic field by a magnetic impedance effect. The sensitive portion includes a soft magnetic material layer composed of a soft magnetic material having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and sensing the magnetic field. The sensitive portion also includes a secondary soft magnetic material layer laminated between the substrate and the soft magnetic material layer. The secondary soft magnetic material layer is composed of a soft magnetic material with large saturation magnetization compared to the soft magnetic material constituting the soft magnetic material layer.

Abstract: A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.

Abstract: The sensitivity of a magnetic sensor using a sensitive element sensing a magnetic field by the magnetic impedance effect is increased. The magnetic sensor includes: a sensitive element sensing a magnetic field by a magnetic impedance effect; and a focusing member provided to face the sensitive element, configured with a soft magnetic material, and focusing magnetic force lines from outside onto the sensitive element.

Abstract: It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: A method for manufacturing an AlN-based laminate includes: forming on or above a substrate 210 a single-crystalline electrode layer 230 containing a metal element; and forming an AlN-based piezoelectric layer 240 on the electrode layer 230 by sputtering. Forming the piezoelectric layer 240 includes applying a pulse voltage to a target during the sputtering at a duty ratio of not more than 4% and at an average power density during pulse application of from 200 W/cm2 to 2500 W/cm2.

Abstract: Provided is a laminate including: a substrate 210, an electrode layer 230 disposed on or above the substrate 210 and having a single-crystalline structure containing a metal element; a buffer layer 220 formed between the substrate 210 and the electrode layer 230 and configured to improve crystal orientation of the electrode layer 230; and a piezoelectric layer 240 formed on the electrode layer 230 and made of a piezoelectric body. Each of the buffer layer 220 and the piezoelectric layer 240 has a single-crystalline structure based on a composition of either ScAlN or AlN.

Abstract: A piezoelectric film including a piezoelectric body configured to extract radio waves of a required frequency by resonance is provided. The piezoelectric body is based on either of ScAlN or AlN, and an X-ray rocking curve full-width at half-maximum (FWHM) of the piezoelectric body in a lattice plane with a Miller index of (11-20) is not more than 10°.

Abstract: Reduction of the S/N in an output from a magnetic sensor using the magnetic impedance effect is suppressed. A magnetic sensor 1 is provided with a sensitive element 31 including: plural soft magnetic material layers 105; and a nonmagnetic amorphous metal layer 106 provided between the plural soft magnetic material layers 105, wherein the soft magnetic material layers 105 facing each other with the nonmagnetic amorphous metal layer 106 interposed therebetween are antiferromagnetically coupled to sense a magnetic field by a magnetic impedance effect.

Abstract: A magnetic sensor includes: a sensitive layer made of a soft magnetic material with uniaxial magnetic anisotropy, the sensitive layer being configured to sense a magnetic field by a magnetic impedance effect; and a magnet layer made of a magnetized hard magnetic material and disposed to face the sensitive layer. The magnet layer is configured to apply a DC magnetic bias Hb in a direction intersecting a direction of the uniaxial magnetic anisotropy in the sensitive layer, the DC magnetic bias Hb having a greater value than an anisotropic magnetic field Hk of the sensitive layer.

Abstract: A magnetic sensor includes: plural sensitive elements 31 each including a soft magnetic material layer 105 having a longitudinal direction and a transverse direction and a conductor layer having higher conductivity than the soft magnetic material layer 105 and extending through the soft magnetic material layer 105 in a longitudinal direction, the sensitive element 31 having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and being configured to sense a magnetic field by a magnetic impedance effect; and a connecting portion 32 continuous with the conductor layer of the sensitive element and configured to connect transversely adjacent sensitive elements 31 in series.

Abstract: A magnetic sensor 1 includes: a nonmagnetic substrate 10; a sensitive element 31 laminated on the substrate 10, the sensitive element 31 being made of a soft magnetic material, the sensitive element 31 having a longitudinal direction and a transverse direction and having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, the sensitive element 31 being configured to sense a magnetic field by a magnetic impedance effect; and a pair of thin-film magnets 20a, 20b laminated on the substrate 10 and disposed to face each other in the longitudinal direction across the sensitive element 31, the pair of thin-film magnets 20a, 20b being configured to apply a magnetic field in the longitudinal direction of the sensitive element 31.

Abstract: A magnetic sensor includes: a non-magnetic substrate; and a sensitive element 31 having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect, wherein the sensitive element 31 includes plural soft magnetic material layers 105a to 105d and plural non-magnetic material layers 106a to 106c configured with a non-magnetic material and laminated between the plural soft magnetic material layers 105a to 105d, and the soft magnetic material layers 105a to 105d facing each other with each of the non-magnetic material layers 106a to 106c interposed therebetween are antiferromagnetically coupled.

Abstract: A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.

Abstract: It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: The sensitivity of a magnetic sensor using a sensitive element sensing a magnetic field by the magnetic impedance effect is increased. The magnetic sensor includes: a sensitive element sensing a magnetic field by a magnetic impedance effect; and a focusing member provided to face the sensitive element, configured with a soft magnetic material, and focusing magnetic force lines from outside onto the sensitive element.

Abstract: A method of manufacturing a magnetic sensor includes: a soft magnetic material layer deposition process depositing a soft magnetic material layer (101) constituting a sensitive part (21) sensing a magnetic field on a substrate (10) by magnetron sputtering; and a sensitive part formation process forming the sensitive part (21) sensing the magnetic field in a portion of the soft magnetic material layer (101) where uniaxial magnetic anisotropy is provided by a magnetic field used for magnetron sputtering of the soft magnetic material layer (101).

Abstract: In a magnetic sensor using a magnetic impedance effect, sensitivity is improved as compared to the case where a width of a sensitive element in the short direction is equal from one end to the other end in the longitudinal direction. The magnetic sensor includes: a non-magnetic substrate; and a sensitive element that is provided on the substrate, composed of a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, having a width at a center portion in the longitudinal direction that is smaller compared to a width at each of both end portions in the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: Reduction of the S/N in an output from a magnetic sensor using the magnetic impedance effect is suppressed. A magnetic sensor 1 is provided with a sensitive element 31 including: plural soft magnetic material layers 105; and a nonmagnetic amorphous metal layer 106 provided between the plural soft magnetic material layers 105, wherein the soft magnetic material layers 105 facing each other with the nonmagnetic amorphous metal layer 106 interposed therebetween are antiferromagnetically coupled to sense a magnetic field by a magnetic impedance effect.

Abstract: A magnetic sensor 1 includes: a thin film magnet 20 which is constituted by a hard magnetic material layer 103 and has magnetic anisotropy in an in-plane direction; and a sensitive part 30 including a sensitive element 31 sensing a magnetic field by a magnetic impedance effect, the sensitive element 31 being constituted by a soft magnetic material layer 105 laminated on the hard magnetic material layer 103, having a longitudinal direction and a short direction, and having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, in which the longitudinal direction faces in the direction of a magnetic field generated by the thin film magnet 20. The thin film magnet 20 and the sensitive element 31 are provided to constitute a magnetic circuit with a facing member provided outside to face one of magnetic poles of the thin film magnet 20.