Patents by Inventor Dal-Hee LEE

Dal-Hee LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180294280
    Abstract: An integrated circuit includes a first conductive pattern in a first conductive layer, a second conductive pattern in a second conductive layer over the first conductive layer, and a via electrically connected with the first conductive pattern and the second conductive pattern to allow a first current flowing from the first conductive pattern to the second conductive pattern and a second current flowing from the second conductive pattern to the first conductive pattern to pass through at different times. The via is placed on the first conductive pattern so that a path of the first current does not overlap with a path of the second current in the first conductive pattern.
    Type: Application
    Filed: March 6, 2018
    Publication date: October 11, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-young KIM, Chang-beom KIM, Hyun-jeong ROH, Tae-joong SONG, Dal-hee LEE, Sung-we CHO
  • Patent number: 9960768
    Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: May 1, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dal-Hee Lee, Jae-Woo Seo, Min-Ho Park
  • Patent number: 9831877
    Abstract: An integrated circuit (IC) includes a first circuit, a first well and a second circuit. The first circuit is disposed on a substrate and configured to shift a first bit signal between a first voltage logic level and a second logic voltage level. The first well is disposed in a cell on the substrate and biased to a first voltage. The first well is spaced apart from a first edge of the cell. The second well is disposed in the cell and biased to a second voltage. The second well is disposed to contact a second edge of the cell opposite to the first edge. The first circuit includes a plurality of transistors respectively disposed in the first and second wells.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: November 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dal-Hee Lee, Jae-Woo Seo
  • Publication number: 20170328954
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop is configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Application
    Filed: July 31, 2017
    Publication date: November 16, 2017
    Inventors: HA-YOUNG KIM, SUNG-WEE CHO, DAL-HEE LEE, JAE-HA LEE
  • Publication number: 20170294430
    Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.
    Type: Application
    Filed: October 20, 2016
    Publication date: October 12, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo SEO, Jin Tae KIM, Tae Joong SONG, Hyoung-Suk OH, Keun Ho LEE, Dal Hee LEE, Sung We CHO
  • Patent number: 9753086
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop os configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: September 5, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-Young Kim, Sung-Wee Cho, Dal-Hee Lee, Jae-Ha Lee
  • Patent number: 9665678
    Abstract: A method of designing an integrated circuit includes a processor receiving input data initially-defining the integrated circuit using a plurality of first standard cells designed to optimize a performance or yield characteristic. The processor substitutes at least one second standard cell designed to optimize a different performance or yield characteristic from that for which the first standard cells were optimized for a corresponding one of the first standard cells. The processor generates output data defining the integrated circuit including the second standard cell. The substituted second standard cell has the same function as the corresponding first standard cell for which it was substituted.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: May 30, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-we Cho, Dal-hee Lee, Ha-young Kim, Jae-woo Seo, Jin-tae Kim
  • Publication number: 20170116366
    Abstract: An engineering change order (ECO) base cell and an integrated circuit (IC) including the ECO base cell are provided. The IC includes a plurality of standard cells and at least one engineering change order (ECO) base cell. The ECO base cell has a layout that is generated based on a layout of a functional cell corresponding to a first circuit including a plurality of logic gates.
    Type: Application
    Filed: August 15, 2016
    Publication date: April 27, 2017
    Inventors: Jae-woo Seo, Dal-hee Lee
  • Publication number: 20170093401
    Abstract: An integrated circuit (IC) includes a first circuit, a first well and a second circuit. The first circuit is disposed on a substrate and configured to shift a first bit signal between a first voltage logic level and a second logic voltage level. The first well is disposed in a cell on the substrate and biased to a first voltage. The first well is spaced apart from a first edge of the cell. The second well is disposed in the cell and biased to a second voltage. The second well is disposed to contact a second edge of the cell opposite to the first edge. The first circuit includes a plurality of transistors respectively disposed in the first and second wells.
    Type: Application
    Filed: July 15, 2016
    Publication date: March 30, 2017
    Inventors: DAL-HEE LEE, JAE-WOO SEO
  • Publication number: 20170011160
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Application
    Filed: September 21, 2016
    Publication date: January 12, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon BAEK, Jae-woo SEO, Gi-young YANG, Dal-hee LEE, Sung-wee CHO
  • Patent number: 9460259
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: October 4, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon Baek, Jae-woo Seo, Gi-young Yang, Dal-hee Lee, Sung-wee Cho
  • Publication number: 20160285452
    Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.
    Type: Application
    Filed: June 9, 2016
    Publication date: September 29, 2016
    Inventors: DAL-HEE LEE, JAE-WOO SEO, MIN-HO PARK
  • Patent number: 9379705
    Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: June 28, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dal-Hee Lee, Jae-Woo Seo, Min-Ho Park
  • Publication number: 20160097811
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop os configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Application
    Filed: October 2, 2015
    Publication date: April 7, 2016
    Inventors: HA-YOUNG KIM, SUNG-WEE CHO, DAL-HEE LEE, JAE-HA LEE
  • Publication number: 20160055285
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Application
    Filed: August 21, 2015
    Publication date: February 25, 2016
    Inventors: Sang-hoon BAEK, Jae-woo SEO, Gi-young YANG, Dal-hee LEE, Sung-wee CHO
  • Publication number: 20160034627
    Abstract: A method of designing an integrated circuit includes a processor receiving input data initially-defining the integrated circuit using a plurality of first standard cells designed to optimize a performance or yield characteristic. The processor substitutes at least one second standard cell designed to optimize a different performance or yield characteristic from that for which the first standard cells were optimized for a corresponding one of the first standard cells. The processor generates output data defining the integrated circuit including the second standard cell. The substituted second standard cell has the same function as the corresponding first standard cell for which it was substituted.
    Type: Application
    Filed: June 19, 2015
    Publication date: February 4, 2016
    Inventors: Sung-we Cho, Dal-hee Lee, Ha-young Kim, Jae-woo Seo, Jin-tae Kim
  • Publication number: 20150244366
    Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.
    Type: Application
    Filed: February 18, 2015
    Publication date: August 27, 2015
    Inventors: DAL-HEE LEE, Jae-Woo Seo, Min-Ho Park
  • Patent number: 8952423
    Abstract: A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joong-Won Jeon, Hee-Sung Kang, Dae-Ho Yoon, Dal-Hee Lee, Suk-Joo Lee
  • Publication number: 20130320405
    Abstract: A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.
    Type: Application
    Filed: March 5, 2013
    Publication date: December 5, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joong-Won JEON, Hee-Sung KANG, Dae-Ho YOON, Dal-Hee LEE, Suk-Joo LEE