Patents by Inventor Damien Saint-Patrice

Damien Saint-Patrice has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9003654
    Abstract: A method for metalizing at least one blind via formed in at least one substrate, including: a) arranging at least one solid portion of electrically conductive material in the blind via, b) performing a thermal treatment of the solid portion of electrically conductive material, making it melt in the blind via, cooling the electrically conductive material, solidifying it in the blind via, and wherein, before carrying out step a), at least part of the walls of the blind via is covered with a material able to prevent wetting of said part of the walls of the blind via by the melted electrically conductive material obtained during the performance of step b), the solidified electrically conductive material obtained after carrying out step c) being able not to be secured to said non-wetting part of the walls of the blind via.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: April 14, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Fabrice Jacquet, Sebastien Bolis, Damien Saint-Patrice
  • Patent number: 8898896
    Abstract: The invention relates to a method for making a connection component that comprises a set of conducting inserts to be electrically connected with another component, said inserts being hollow.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: December 2, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Francois Marion, Damien Saint-Patrice
  • Patent number: 8674489
    Abstract: An interconnect device is disclosed including a support in which at least one hole is formed, the hole having walls forming a closed contour and being formed by a cavity and one or several slots communicating with the cavity. The slots extend in a direction making a non-zero angle with the main plane of the support. Several conducting elements are positioned on at least one wall of the hole and pass through the hole. The conducting elements are each intended to connect conducting areas to each other that are situated on either side of the support. At least one of the slots separates two of the conducting elements from each other.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: March 18, 2014
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Sebastien Bolis, Fabrice Jacquet, Damien Saint-Patrice
  • Patent number: 8482130
    Abstract: An interconnect structure including: at least one first substrate, whereof at least one first face is made integral with at least one face of at least one second substrate, at least one blind via passing through the first substrate and emerging at the first face of the first substrate and at a second face, opposite the first face, of the first substrate, at least one electric contact arranged against said face of the second substrate and opposite the blind via, and/or against the first face and/or against the second face of the first substrate, at least one channel putting the blind via in communication with an environment outside the interconnect structure and/or with at least one cavity formed in the interconnect structure, and extending substantially parallel to one of said faces of the first or second substrate.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: July 9, 2013
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Damien Saint-Patrice, Sebastien Bolis, Fabrice Jacquet
  • Patent number: 8470184
    Abstract: A method for making a micro-device including at least one receiving site for components, formed in a thickness of a substrate. The method includes: a) making in at least one first substrate adhesively bonded to a second substrate via a discontinuous adhesive bonding interface, at least one first trench around at least one sacrificial block of the first substrate, by etching the first substrate so as to expose the adhesive bonding interface; and b) removing the sacrificial block so as to make at least one first cavity in the first substrate.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: June 25, 2013
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Damien Saint-Patrice, Sebastien Bolis, Fabrice Jacquet
  • Publication number: 20120031874
    Abstract: A method for making a micro-device including at least one receiving site for components, formed in a thickness of a substrate. The method includes: a) making in at least one first substrate adhesively bonded to a second substrate via a discontinuous adhesive bonding interface, at least one first trench around at least one sacrificial block of the first substrate, by etching the first substrate so as to expose the adhesive bonding interface; and b) removing the sacrificial block so as to make at least one first cavity in the first substrate.
    Type: Application
    Filed: April 20, 2010
    Publication date: February 9, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Damien Saint-Patrice, Sebastien Bolis, Fabrice Jacquet
  • Publication number: 20110221068
    Abstract: An interconnect structure including: at least one first substrate, whereof at least one first face is made integral with at least one face of at least one second substrate, at least one blind via passing through the first substrate and emerging at the first face of the first substrate and at a second face, opposite the first face, of the first substrate, at least one electric contact arranged against said face of the second substrate and opposite the blind via, and/or against the first face and/or against the second face of the first substrate, at least one channel putting the blind via in communication with an environment outside the interconnect structure and/or with at least one cavity formed in the interconnect structure, and extending substantially parallel to one of said faces of the first or second substrate.
    Type: Application
    Filed: February 22, 2011
    Publication date: September 15, 2011
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
    Inventors: Damien SAINT-PATRICE, Sébastien Bolis, Fabrice Jacquet
  • Publication number: 20110219612
    Abstract: A method for metalizing at least one blind via formed in at least one substrate, including at least the following steps: a) arranging at least one solid portion of electrically conductive material in the blind via, b) performing a thermal treatment of the solid portion of electrically conductive material, making it melt in the blind via, c) cooling the electrically conductive material, solidifying it in the blind via, and wherein, before carrying out step a), at least part of the walls of the blind via is covered with a material able to prevent wetting of said part of the walls of the blind via by the melted electrically conductive material obtained during the performance of step b), the solidified electrically conductive material obtained after carrying out step c) being able not to be secured to said non-wetting part of the walls of the blind via.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 15, 2011
    Applicant: Comm. a I' ener. atom. et aux energies alter.
    Inventors: Fabrice JACQUET, Sébastien Bolis, Damien Saint-Patrice
  • Publication number: 20110097909
    Abstract: The invention concerns an interconnect device comprising a support (200) in which at least one hole is formed, the hole having walls forming a closed contour and being formed by a cavity (203) and one or several slots (205a-205b, 215a-215b) communicating with the cavity, the slots extending in a direction making a non-zero angle with the main plane of the support, several conducting elements (214) being positioned on at least one wall of the hole and passing through the latter part, the conducting elements each being intended to connect conducting areas to each other that are situated on either side of the support, at least one of said slots separating two of said conducting elements from each other.
    Type: Application
    Filed: October 26, 2010
    Publication date: April 28, 2011
    Applicant: COMM. A L'ENER.ATOM. ET AUX ENERGIES ALT.
    Inventors: Sébastien BOLIS, Fabrice Jacquet, Damien Saint-Patrice
  • Publication number: 20110094789
    Abstract: The invention relates to a method for making a connection component that comprises a set of conducting inserts to be electrically connected with another component, said inserts being hollow.
    Type: Application
    Filed: February 19, 2009
    Publication date: April 28, 2011
    Applicant: Commissariat A. L'Energie Atomique et Aux Energies Alternatives
    Inventors: Francois Marion, Damien Saint-Patrice
  • Publication number: 20110041332
    Abstract: The invention relates to a component comprising, on one face, a set of conductive inserts to be electrically connected to conductive buried regions of another component, said inserts resting on conductive blocks, advantageously produced from a deformable material and positioned at the surface of the component. The surface of the block, which is to come into contact with the insert, has at least one dimension larger than that of the buried region.
    Type: Application
    Filed: February 19, 2009
    Publication date: February 24, 2011
    Inventors: Damien Saint-Patrice, Francois Marion