Patents by Inventor Daniel Alexander Steigerwald
Daniel Alexander Steigerwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10170675Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: GrantFiled: July 29, 2017Date of Patent: January 1, 2019Assignee: LUMILEDS LLCInventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
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Patent number: 10056531Abstract: A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.Type: GrantFiled: August 21, 2012Date of Patent: August 21, 2018Assignee: Lumileds LLCInventors: Jerome Chandra Bhat, Daniel Alexander Steigerwald, Michael David Camras, Han Ho Choi, Nathan Fredrick Gardner, Oleg Borisovich Shchekin
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Publication number: 20180019370Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.Type: ApplicationFiled: July 31, 2017Publication date: January 18, 2018Inventors: Jipu Lei, Kwong-Hin Henry Choy, Yajun Wei, Stefano Schiaffino, Daniel Alexander Steigerwald
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Publication number: 20170373235Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: ApplicationFiled: July 29, 2017Publication date: December 28, 2017Inventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
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Patent number: 9722137Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.Type: GrantFiled: January 12, 2016Date of Patent: August 1, 2017Assignee: Koninklijke Philips N.V.Inventors: Jipu Lei, Kwong-Hin Henry Choy, Yajun Wei, Stefano Schiaffino, Daniel Alexander Steigerwald
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Patent number: 9722161Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: GrantFiled: December 21, 2015Date of Patent: August 1, 2017Assignee: Koninklijke Philips N.V.Inventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
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Patent number: 9705047Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.Type: GrantFiled: March 10, 2016Date of Patent: July 11, 2017Assignee: Koninklijke Philips N.V.Inventors: Daniel Alexander Steigerwald, Jerome Chandra Bhat, Salman Akram
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Patent number: 9431581Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.Type: GrantFiled: September 29, 2015Date of Patent: August 30, 2016Assignee: Koninklijke Philips N.V.Inventors: Daniel Alexander Steigerwald, Jerome Chandra Bhat, Salman Akram
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Publication number: 20160197244Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.Type: ApplicationFiled: March 10, 2016Publication date: July 7, 2016Inventors: DANIEL ALEXANDER STEIGERWALD, JEROME CHANDRA BHAT, SALMAN AKRAM
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Publication number: 20160126408Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.Type: ApplicationFiled: January 12, 2016Publication date: May 5, 2016Inventors: Jipu Lei, Kwong-Hin Henry Choy, Yajun Wei, Stefano Schiaffino, Daniel Alexander Steigerwald
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Publication number: 20160126436Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: ApplicationFiled: December 21, 2015Publication date: May 5, 2016Inventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
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Publication number: 20160020198Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.Type: ApplicationFiled: September 29, 2015Publication date: January 21, 2016Inventors: DANIEL ALEXANDER STEIGERWALD, JEROME CHANDRA BHAT, SALMAN AKRAM
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Patent number: 9219209Abstract: A light emitting diode (LED) structure (10) has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer (34) is formed in the gap followed by filling the gap with a metal (42). The metal is patterned to form stud bumps (40, 42, 44) that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: GrantFiled: April 25, 2012Date of Patent: December 22, 2015Assignee: Koninklijke Philips N.V.Inventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiafino, Daniel Alexander Steigerwald
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Patent number: 9153758Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.Type: GrantFiled: May 21, 2012Date of Patent: October 6, 2015Assignee: Koninklijke Philips N.V.Inventors: Daniel Alexander Steigerwald, Jérôme Chandra Bhat, Salman Akram
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Patent number: 8951817Abstract: The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation.Type: GrantFiled: December 29, 2011Date of Patent: February 10, 2015Assignee: Koninklijke Philips N.V.Inventor: Daniel Alexander Steigerwald
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Publication number: 20140179029Abstract: A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.Type: ApplicationFiled: August 21, 2012Publication date: June 26, 2014Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Jerome Chandra Bhat, Daniel Alexander Steigerwald, Michael David Camras, Han Ho Choi, Nathan Fredrick Gardner, Oleg Borisovich Shchekin
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Publication number: 20140077246Abstract: A support substrate including a body (35) and a plurality of vias (48) extending through an entire thickness of the body is bonded to a semiconductor light emitting device including a light emitting layer (14) sandwiched between an n-type region (12) and a p-type region (16). The support substrate is no wider than the semiconductor light emitting device.Type: ApplicationFiled: May 22, 2012Publication date: March 20, 2014Applicant: KONINKLIJKE PHILIPS N.V.Inventors: Jerome Chandra Bhat, Salman Akram, Daniel Alexander Steigerwald
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Publication number: 20140061714Abstract: A light emitting diode (LED) structure (10) has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semi-conductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer (34) is formed in the gap followed by filling the gap with a metal (42). The metal is patterned to form stud bumps (40, 42, 44) that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: ApplicationFiled: April 25, 2012Publication date: March 6, 2014Applicant: KONINKLIJKE PHILIPS N.V.Inventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiafino, Daniel Alexander Steigerwald
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Publication number: 20130292716Abstract: The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation.Type: ApplicationFiled: December 29, 2011Publication date: November 7, 2013Applicant: KONINKLIJKE PHILIPS N.V.Inventor: Daniel Alexander Steigerwald
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Patent number: 6630689Abstract: In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from −10 to 30 degrees, relative to the substrate. The dielectric stack is comprised of alternating low refractive index and high refractive index layers. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric stack layer adjacent to the mesa wall has a low refractive index compared to GaN, and the low refractive index layers are Al2O3.Type: GrantFiled: May 9, 2001Date of Patent: October 7, 2003Assignee: Lumileds Lighting, U.S. LLCInventors: Jerome Chandra Bhat, Daniel Alexander Steigerwald