Abstract: A method for forming a trench filled with an insulator crossing a single-crystal silicon layer and a first SiO2 layer and penetrating into a silicon support, this method including the steps of forming on the silicon layer a second SiO2 layer and a first silicon nitride layer, forming the trench, and performing a first oxidizing processing to form a third SiO2 layer; performing a second oxidizing processing to form, on the exposed surfaces of the first silicon nitride layer a fourth SiO2 layer; depositing a second silicon nitride layer and filling the trench with SiO2; and removing the upper portion of the structure until the upper surface of the silicon layer is exposed.

Abstract: Embodiments of the invention provide systems and methods for nesting objects in 2D sheets and 3D volumes. In one embodiment, a nesting application simplifies the shapes of parts and performs a rigid body simulation of the parts dropping into a 2D sheet or 3D volume. In the rigid body simulation, parts begin from random initial positions on one or more sides and drop under the force of gravity into the 2D sheet or 3D volume until coming into contact with another part, a boundary, or the origin of the gravity. The parts may be dropped according to a particular order, such as alternating large and small parts. Further, the simulation may be translation- and/or position-only, meaning the parts do not rotate and/or do not have momentum, respectively. Tighter packing may be achieved by incorporating user inputs and simulating jittering of the parts using random forces.

Abstract: Embodiments disclosed herein provide systems and methods for preparing geometry for 3D printing. In one embodiment, a 3D printing preparation application receives 3D geometry and repairs non-manifold edges and non-manifold vertices, producing a topological manifold geometry. The 3D printing preparation application then welds coincident edges without coincident faces and fills holes in the geometry. The 3D printing preparation application may further perform resolution-aware thickening of the geometry by estimating distances to a medial axis based on distances to distance field shocks, and advecting the distance field using a velocity field. A similar approach may be used to perform resolution-aware separation enforcement. Alternatively, one component may be globally thickened and subtracted from another for separation enforcement. The 3D printing preparation application may also split large models and add connectors for connecting the split pieces after printing.

Abstract: Embodiments disclosed herein provide techniques for decomposing 3D geometry into developable surface patches and cut patterns. In one embodiment, a decomposition application receives a triangulated 3D surface as input and determines approximately developable surface patches from the 3D surface using a variant of k-means clustering. Such approximately developable surface patches may have undesirable jagged boundaries, which the decomposition application may eliminate by generating a data structure separate from the mesh that contains patch boundaries and optimizing the patch boundaries or, alternatively, remeshing the mesh such that patch boundaries fall on mesh edges. The decomposition application may then flatten the patches into truly developable surfaces by re-triangulating the patches as ruled surfaces. The decomposition application may further flatten the ruled surfaces into 2D shapes and lay those shapes out on virtual sheets of material.

Abstract: A method for forming a trench filled with an insulator crossing a single-crystal silicon layer and a first SiO2 layer and penetrating into a silicon support, this method including the steps of forming on the silicon layer a second SiO2 layer and a first silicon nitride layer, forming the trench, and performing a first oxidizing processing to form a third SiO2 layer; performing a second oxidizing processing to form, on the exposed surfaces of the first silicon nitride layer a fourth SiO2 layer; depositing a second silicon nitride layer and filling the trench with SiO2; and removing the upper portion of the structure until the upper surface of the silicon layer is exposed.

Abstract: A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.

Abstract: An assembly between a metal piece and a ceramic material piece made of SiC and/or C based ceramic material. The assembly includes a stack structure including the following elements assembled together in pairs in this order, by brazing: the metal piece; a first intermediate piece; a second intermediate piece; and the ceramic material piece. The second intermediate piece is made of another ceramic material, that is chemically less reactive relative to metals than are SiC or C, and that presents a coefficient of expansion smaller than that of the material constituting the metal piece. The first intermediate piece is made of metal and can deform to compensate for expansion difference between the metal piece and the second intermediate piece. The assembly can be used in a turbomachine.

Abstract: An assembly including a metal piece, a piece made of ceramic material, and at least one intermediate connection element assembled to each of the pieces by brazing. The intermediate connection element includes a deformable sheet presenting at least two flat zones brazed to respective ones of the pieces, the two flat zones being interconnected by a deformable zone presenting at least two free undulations oriented in alternation towards the metal piece and towards the piece made of ceramic material.

Abstract: A method of protecting a thermostructural part made of ceramic matrix composite material against wear by coating the part is disclosed. The coating is made by providing a mixture comprising colloidal silica, a powdered silico-aluminous and/or aluminous refractory ceramic material, and water; applying at least one layer of the mixture on the part; drying the layer; and placing the part at a temperature greater than 1000° C., thereby firing the layer and forming an enamel coating. The invention is applicable to SiC moving flaps for a turbojet nozzle.

Abstract: An assembly including a metal piece, a piece made of ceramic material, and at least one intermediate connection element assembled to each of the pieces by brazing. The intermediate connection element includes a deformable sheet presenting at least two flat zones brazed to respective ones of the pieces, the two flat zones being interconnected by a deformable zone presenting at least two free undulations oriented in alternation towards the metal piece and towards the piece made of ceramic material.

Abstract: An assembly between a metal piece and a ceramic material piece made of SiC and/or C based ceramic material. The assembly includes a stack structure including the following elements assembled together in pairs in this order, by brazing: the metal piece; a first intermediate piece; a second intermediate piece; and the ceramic material piece. The second intermediate piece is made of another ceramic material, that is chemically less reactive relative to metals than are SiC or C, and that presents a coefficient of expansion smaller than that of the material constituting the metal piece. The first intermediate piece is made of metal and can deform to compensate for expansion difference between the metal piece and the second intermediate piece. The assembly can be used in a turbomachine.

Abstract: A process for depositing a silicon-based material on a substrate uses the technology of plasma-enhanced atomic layer deposition. The process is carried out over several cycles, wherein each cycle includes: exposing the substrate to a first precursor, which is an organometallic silicon precursor; and applying a plasma of at least a second precursor, different from the first precursor. Semiconductor products such as 3D capacitors, vertical transistor gate spacers, and conformal transistor stressors are made from the process.

Abstract: A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.

Abstract: The device (10) is used for temporarily repairing a ruptured or otherwise damaged rubber-band track (50) of a vehicle and allow the vehicle to proceed on its own to the nearest maintenance site or to a convenient location where replacement or permanent repair of the track (50) can be undertaken. A method for temporarily repairing a damaged rubber-band track (50) is also disclosed. The device (10) comprises a plurality of spaced-apart and parallel support members (12), each being transversely disposed on the exterior side (50a) of the track (50). A plurality of linking members (18) is extending between corresponding ends of two adjacent support members (12) and are pivotally connected to each adjacent linking member (18). A plurality of track retention members (30) maintain the device (10) on the track (50). Damaged portions of the track (50) are also positively secured to the device (10) by fasteners or the like to prevent them from moving.

Abstract: The invention concerns a clutch friction disk for a dry disk clutch, more particularly for a motor vehicle, comprising two friction rings including structure generating an air pressure force under the effect of the rotating friction disk, comprising a circumferential groove (20) communicating with a plurality of radial grooves (30) emerging at the friction ring internal periphery (13).

Abstract: Temperatures of 0.2.degree. K or lower are achieved by feeding 3He and 4He separately into a mixing chamber (5) in an enclosure (3) in which the temperature is held at around 2.degree. K. The endothermal dilution of 3He into 4He provides the required cold. The resulting mixture (M) passes out of the mixing chamber and the enclosure while cooling the incoming fluids by means of exchangers (1, 12, 4). To compensate for thermal losses, the mixture (M) also undergoes Joule-Thompson expansion (12) optionally followed by evaporation (13), preferably between about 1.5.degree. and 2.5.degree. K, and the resulting cold is used to lower the temperature of the incoming fluids from well above 4.degree. K to between 1.5.degree. and 2.5.degree. K, which is close to the temperature prevailing inside the enclosure (13) containing the coldest point (6) in the circuit.