Abstract: Systems and methods using PVD for producing materials, for example nitrides, are disclosed. The present application also relates to use of the materials for electrode materials.

Abstract: PVD and HPHT methods and apparatus for producing materials, for example nitrides, are disclosed.

Abstract: A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.

Abstract: A method wherein a thermal gradient over a substrate enhances Chemical Vapor Deposition (CVD) at low pressures. An upper heat source is positioned above the substrate and a lower heat source is positioned below the substrate. The upper and lower heat sources are operated to raise the substrate temperature to 400-700° and cause a heat gradient of 100-200° C. between the upper and lower heat sources. This heat gradient causes an increase in the deposition rate for a given reactant gas flow rate and chamber pressure. The preferred parameters for implementation of the present invention for poly crystalline silicon deposition include the temperature of the upper heat source 100-200° C. above the lower heat source, a substrate temperature in the range of 400-700° C., a reactant gas pressure between 250 and 1000 mTorr, and a gas flow rate of 200-800 sccm. The substrate is rotated, with 5 RPM being a typical rate.

Abstract: An improved plastic package and method of manufacture thereof for use in packaging integrated circuit semiconductor devices and the like. A transfer molded package having the lead frame disposed therein is formed having an opening therethrough. The device to be packaged is mounted on a stepped mounting member which then is located with respect to the opening with the height of the step being selected to generally dispose the top surface of the device substantially co-planar with the adjacent leads of the package. Sealing of the package may be accomplished by potting the upper and lower cavities of the opening in the plastic package, or by potting or cementing over a cup above the device so the space immediately above the device remains unfilled after sealing.