Abstract: An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition.

Abstract: Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

Abstract: A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract: A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

Abstract: An adjustable eccentric axle caster assembly for a pallet truck is provided. The adjustable caster assembly includes an eccentric axle, a caster wheel mounted on the eccentric axle, and a fastener for securing the eccentric axle to provide a desired caster wheel position. Additionally, a method of adjusting the eccentric axle caster assembly is provided.

Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.

Abstract: A one-step method for production of green-colored, stabilized wet-process phosphoric acid in which black-colored, wet-process phosphoric acid containing incidental metallic impurities and a carbonaceous content of less than 1000 ppm is oxidized to produce a green-colored liquid having a carbonaceous content less than 500 ppm. A typical green-colored liquid product produced by this one-step process has an emf of greater than 800 mv.

Abstract: A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

Abstract: Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free polishing composition comprising one or more surfactants to the substrate surface to modify the removal rates of the at least the first dielectric material and the second dielectric material, polishing the substrate surface, and removing the second material at a higher removal rate than the first material from a substrate surface. One aspect of the apparatus provides a system for processing substrates including a platen adapted for polishing the substrate with polishing media and a computer based controller configured to perform one aspect of the method.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate.

Abstract: An article and method are provided for polishing a substrate surface. In one aspect, the invention provides polishing articles including a linear strip of backing material and a fibrous polishing material disposed on the backing material. The polishing material may be in the form of individual fibers, a mesh of fibers, a web of fibers, an interwoven cloth of fibers, or felt. The polishing material may be impregnated or coated with a polishing enhancing material. The polishing article may be disposed in an apparatus for processing a substrate on a platen. In operation, a substrate is contacted with the polishing article and relative motion is provided between the substrate and the polishing article to remove material from the substrate surface.

Abstract: The neuro-cottonoid dispensing device comprises a tray of plastic or similar disposable material with a trough and a series of channels to accommodate neurosurgical sponges. A neurosurgical sponge comprises a string attached to an absorbent material, usually cotton. Either the sponge or the string can be radio-opaque (x-ray detectable). The absorbent part of the neurosurgical sponge is often referred to as a cottonoid by those skilled in the art. The aforementioned grooves or channels keep the strings tangle-free and the cottonoids immediately accessible. The cottonoids rest within the trough. Immediately preceding or during neurosurgery, the trough can be filled with a wetting solution, usually saline. A plastic film or similar material covers the tray and encloses the neurosurgical sponges in a sterile environment.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Abstract: Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.

Abstract: Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free polishing composition comprising one or more surfactants to the substrate surface to modify the removal rates of the at least the first dielectric material and the second dielectric material, polishing the substrate surface, and removing the second material at a higher removal rate than the first material from a substrate surface. One aspect of the apparatus provides a system for processing substrates including a platen adapted for polishing the substrate with polishing media and a computer based controller configured to perform one aspect of the method.

Abstract: Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

Abstract: A method and apparatus for forming an in situ stabilized high concentration borophosphosilicate glass film on a semiconductor wafer or substrate. In an embodiment, the method starts by providing the substrate into a chamber. The method continues by providing a silicon source, an oxygen source, a boron source and a phosphorous source into the chamber to form a high concentration borophosphosilicate glass layer on the substrate. The method further includes reflowing the high concentration borophosphosilicate glass layer formed on the substrate.