Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

Abstract: One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

Abstract: A gas jet deposition method and apparatus includes a plurality of ports to supply plasma to the substrate on which deposition is to occur. A reagent gas is introduced either into the ports or into the expansion chamber. The use of multiple ports results in a much more uniform deposition of material on the substrate. In preferred embodiments, a carrier gas plasma is created using an excitation source such as a microwave power supply.

Abstract: A coast control device for a walkie/rider pallet truck locks the position of a steering arm of the truck to prevent movement by a deadman mechanism. The disclosed locking device is a brake: an armature plate mounted to the steering arm; and an electromagnet coupled to a steering head that is operated to activate coasting operation. The brake force can be overcome by an operator to manually apply the truck brake or to reposition the steering arm to a new position where it is again locked. For controlling coasting operation, the brake is manually engaged by an actuator mounted adjacent to or on a grab bar that is to be gripped by an operator riding on the truck. With the actuator so located, coasting operation can be conveniently engaged while the operator is walking beside the truck.

Abstract: A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

Abstract: The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

Abstract: The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.

Abstract: The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.

Abstract: Systems consistent with the present invention allow a user to scan document text and then automatically recognize and organize that text into a format for display by the user. The system preferably includes a hand-held device operable by the user for scanning the text of the document. The hand-held device stores the scanned text information and can then transfer the stored text information to a computer. The computer automatically recognizes the scanned text based on the format and context in which the text is found in the document. Further, the computer automatically creates data entries describing the scanned text and organizes these data entries for display to the user.

Abstract: An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition.

Abstract: The neuro-cottonoid dispensing device comprises a tray of plastic or similar disposable material with a trough and a series of channels to accommodate neurosurgical sponges. A neurosurgical sponge comprises a string attached to an absorbent material, usually cotton. Either the sponge or the string can be radio-opaque (x-ray detectable). The absorbent part of the neurosurgical sponge is often referred to as a cottonoid by those skilled in the art. The aforementioned grooves or channels keep the strings tangle-free and the cottonoids immediately accessible. The cottonoids rest within the trough. Immediately preceding or during neurosurgery, the trough can be filled with a wetting solution, usually saline. A plastic film or similar material covers the tray and encloses the neurosurgical sponges in a sterile environment.

Abstract: The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.

Abstract: This invention relates to herbicidal mixtures comprising sulfonylureas together with glyphosate, herbicidal compositions of said mixtures, and a method for the use of said mixtures to control undesired vegetation.

Abstract: This invention relates to herbicidal mixtures of anilofos with one or more of the compounds selected from azimsulfuron, metsulfuron methyl, chlorimuron ethyl, bensulfuron methyl, ethametsulfuron methyl, nicosulfuron, rimsulfuron, sulfometuron methyl, thifensulfuron methyl, tribenuron methyl, triflusulfuron methyl, methyl 2-????(4,6-dimethoxy-2-pyrimidinyl)amino!carbonyl!amino!sulfonyl!-6-(trifl uoromethyl)-3-pyridinecarboxylate, chlorsulfuron, propanil and hexazinone, herbicidal compositions of said mixtures, and a method for the use of said mixtures to control undesired vegetation.

Abstract: This invention relates to herbicidal mixtures of anilofos with propanil, or one or more of the compounds selected from azimsulfuron, metsulfuron methyl, chlorimuron ethyl, bensulfuron methyl, ethametsulfuron methyl, nicosulfuron, rimsulfuron, sulfometuron methyl, thifensulfuron methyl, tribenuron methyl, triflusulfuron methyl, methyl 2-????(4,6-dimethoxy-2-pyrimidinyl)amino!carbonyl!amino!sulfonyl!-6-(trifl uoro-methyl)-3-pyridinecarboxylate, chlorsulfuron, and hexazinone, herbicidal compositions of said mixtures, and a method for the use of said mixtures to control undesired vegetation.

Abstract: A fastener system (210) for adjustably attaching or mounting an automotive vehicle window channel member or guide rail (214) to or upon an automotive vehicle inner door panel (212) so that the automotive vehicle window channel member or guide rail (214) can be disposed at a predetermined position with respect to the automotive vehicle inner door panel (212) includes a nut member (234) mounted upon the inner door panel (212), and a shaft or rod portion (264) of the window channel member or guide rail (214) is inserted through the nut member (234). A tubular fastener screw or bolt (224) is inserted over the shaft or rod portion (264) of the window channel member or guide rail (214) so as to also be inserted within the nut member (234).

Abstract: Polysilicon (20) in a trench (21) is etched at an angle to produce a conductor within the trench that has shape characteristics which approximate the shadow of the side wall (26) of the trench (21) closest the beam source. Specifically, when the first side wall (26) is closest the beam source and the second side wall (27) is furthest from the beam source, the polysilicon on the first side wall (26) is almost as high as the first side wall (26), while the polysilicon on the more exposed side wall (27) is considerably lower than the first side wall (26) and approximates the shadow of the first side wall (26) on the second side wall (27) relative to the beam.