Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: A method of providing home dialysis treatment with a dialysis machine includes performing, by the dialysis machine, dialysis on a patient using a first unit of a consumable, providing, by the dialysis machine as a result of performing the dialysis, operating data indicating consumption of the first unit, estimating a remaining count of the consumable based on the operating data, forecasting future demand for the consumable based on the operating data, providing a quantity of new units of the consumable to the dialysis machine based on a comparison of the forecasted future demand and the estimated remaining count, and performing, by the dialysis machine dialysis on the patient using one or more of the new units of the consumable.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Dream stage enhancement uses a headband with EEG-EOG sensors, onboard processors, memory, coarse and fine time REM waveform detection modules, LEDs and an audio playback unit. After normalization to the user's EEG waveforms, the user's EEG-EOG signals are processed, REM and NREM stages detected and light, sound or AV stimuli are presented to the user based upon user-supplied light-sound-AV stimuli commands. To provide a reality check control (“RCC”), the head unit has a user actuatable RC interface whereby during sleep, RC stimuli are presented when the user depresses the RCC control which plays back the user supplied stimulus. In a “learning mode,” the user selects “Recall” or “No Recall” (“NR”) after the sleep period. If NR, then the system changes the color of light stimuli, light intensity, flash, audio sound type, audio intensity, and AV. If “Recall” the user supplied stimuli commands are carried out.

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: A method for boiler control and a monitoring system is disclosed. The present invention provides superior boiler control compared with earlier and current systems. In accordance with the illustrative embodiment of the present invention, the heating system is improved by utilizing computer and telecommunications technology to provide more accurate boiler control and to automatically identify problems in the system.

Abstract: Dream stage enhancement uses a headband with EEG-EOG sensors, onboard processors, memory, coarse and fine time REM waveform detection modules, LEDs and an audio playback unit. After normalization to the user's EEG waveforms, the user's EEG-EOG signals are processed, REM and NREM stages detected and light, sound or AV stimuli are presented to the user based upon user-supplied light-sound-AV stimuli commands. To provide a reality check control (“RCC”), the head unit has a user actuatable RC interface whereby during sleep, RC stimuli are presented when the user depresses the RCC control which plays back the user supplied stimulus. In a “learning mode,” the user selects “Recall” or “No Recall” (“NR”) after the sleep period. If NR, then the system changes the color of light stimuli, light intensity, flash, audio sound type, audio intensity, and AV. If “Recall” the user supplied stimuli commands are carried out.

Abstract: A solid state light emitting device includes a solid state light emitter and a lumiphoric material that are selected for use with one another to provide light emissions with improved (i.e., reduced) thermal droop A solid state emitter having a short peak emission wavelength (e.g., in a visible range at or below 440 nm) seemingly less than optimal at room temperature for use with a particular lumiphor can trigger more efficient stimulation of lumiphor emissions at high temperatures. Enhanced epitaxial structures also inhibit decrease of radiant flux by LEDs at elevated temperatures.

Abstract: Dream stage enhancement uses a headband with EEG-EOG sensors, onboard processors, memory, coarse and fine time REM waveform detection modules, LEDs and an audio playback unit. After normalization to the user's EEG waveforms, the user's EEG-EOG signals are processed, REM and NREM stages detected and light, sound or AV stimuli are presented to the user based upon user-supplied light-sound-AV stimuli commands. To provide a reality check control (“RCC”), the head unit has a user actuatable RC interface whereby during sleep, RC stimuli are presented when the user depresses the RCC control which plays back the user supplied stimulus. In a “learning mode,” the user selects “Recall” or “No Recall” (“NR”) after the sleep period. If NR, then the system changes the color of light stimuli, light intensity, flash, audio sound type, audio intensity, and AV. If “Recall” the user supplied stimuli commands are carried out.

Abstract: A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may be configured to generate light responsive to an electrical signal therethrough. Related methods, devices, and structures are also discussed.

Abstract: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

Abstract: A semiconductor device may include a doped semiconductor region wherein a dopant concentration of the semiconductor region is modulated over a plurality of intervals. Each interval may include at least one portion having a relatively low dopant concentration and at least one portion having a relatively high dopant concentration. A plurality of delta doped layers may be included in the plurality of intervals. Related methods are also discussed.

Abstract: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.