Patents by Inventor Daniel Carleton

Daniel Carleton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Device Structures with Modulated Doping and Related Methods
    Publication number: 20110140083
    Abstract: A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may be configured to generate light responsive to an electrical signal therethrough. Related methods, devices, and structures are also discussed.
    Type: Application
    Filed: December 16, 2009
    Publication date: June 16, 2011
    Inventors: Daniel Carleton Driscoll, Ashonita Chavan, Adam William Saxler
  • Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices
    Patent number: 7943924
    Abstract: Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: May 17, 2011
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, David Todd Emerson
  • INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES
    Publication number: 20100314640
    Abstract: Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
    Type: Application
    Filed: August 5, 2010
    Publication date: December 16, 2010
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, David Todd Emerson
  • Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
    Patent number: 7791101
    Abstract: Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: September 7, 2010
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, David Todd Emerson
  • INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES
    Publication number: 20090242897
    Abstract: Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
    Type: Application
    Filed: June 24, 2008
    Publication date: October 1, 2009
    Inventors: Michael John Bergmann, Daniel Carleton Driscoll, David Todd Emerson