Publication number: 20190360096
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and RN is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R1, R2, R3, and R4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.
Type:
Application
Filed:
October 5, 2017
Publication date:
November 28, 2019
Applicant:
BASF SE
Inventors:
David Dominique SCHWEINFURTH, Falko ABELS, Lukas MAYR, Daniel LOEFFLER, Daniel WALDMANN