Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a ?-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a ?-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln . . . M . . . Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R 1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

Abstract: A process of bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

Abstract: The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state Ln-M-XmL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.