Patents by Inventor Daniel M. Kinzer

Daniel M. Kinzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190326427
    Abstract: A gallium nitride transistor includes one or more P-type hole injection structures that are positioned between the gate and the drain. The P-type hole injection structures are configured to inject holes in the transistor channel to combine with trapped carriers (e.g., electrons) so the electrical conductivity of the channel is less susceptible to previous voltage potentials applied to the transistor.
    Type: Application
    Filed: April 23, 2019
    Publication date: October 24, 2019
    Applicant: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel M. Kinzer, Maher J. Hamdan
  • Publication number: 20190326426
    Abstract: A gallium nitride transistor includes a substrate on which a source region, a drain region, a drift region and a gate region are defined. The drift region extends between the source region and the drain region. The gate region includes a combination of enhancement-mode and depletion-mode devices that are positioned across the drift region and are used together to control charge density and mobility of electrons in the drift region with a relatively low threshold voltage (Vth). Enhancement-mode devices are formed using a P-type layer disposed on the substrate and coupled to a gate electrode.
    Type: Application
    Filed: April 23, 2019
    Publication date: October 24, 2019
    Applicant: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Pil Sung Park, Maher J. Hamdan, Santosh Sharma, Daniel M. Kinzer
  • Publication number: 20190319471
    Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 17, 2019
    Applicant: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 10355475
    Abstract: A gallium-nitride based power transistor is coupled to a voltage source that has transient overvoltage conditions exceeding the allowable withstanding voltage of the power transistor. An overvoltage protection circuit is coupled to the power transistor to temporarily turn on the power transistor during the overvoltage condition to protect the power transistor from overvoltage breakdown.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: July 16, 2019
    Assignee: NAVITAS SEMICONDUCTOR, INC.
    Inventor: Daniel M. Kinzer
  • Patent number: 10135275
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: November 20, 2018
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9985626
    Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: May 29, 2018
    Assignee: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel M. Kinzer, Ju Jason Zhang
  • Patent number: 9960620
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: May 1, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9960154
    Abstract: A semiconductor device is disclosed. The device includes a substrate including GaN, a two dimensional electron gas (2DEG) inducing layer on the substrate, and a lateral transistor on the 2DEG inducing layer. The lateral transistor includes source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a field plate between the gate and the drain contact. The device also includes one or more insulation layers on the 2DEG inducing layer, where the field plate is spaced apart from the 2DEG inducing layer by the insulation layers, and a conductor on the insulation layers, where a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: May 1, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventor: Daniel M. Kinzer
  • Patent number: 9859732
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: January 2, 2018
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Publication number: 20170222644
    Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.
    Type: Application
    Filed: January 29, 2016
    Publication date: August 3, 2017
    Applicant: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel M. Kinzer, Ju Jason Zhang
  • Patent number: 9716395
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: July 25, 2017
    Assignee: NAVITAS SEMICONDUCTOR, INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9685869
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: June 20, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9647476
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: May 9, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9640471
    Abstract: Leadless electronic packages for GaN-based half bridge power conversion circuits have low inductance internal and external connections, high thermal conductivity and a large separation between external connections for use in high voltage power conversion circuits. Some electronic packages employ ā€œLā€ shaped power paths and internal low impedance die to die connections. Further embodiments employ an insulative substrate disposed within the electronic package for efficient power path routing and increased packaging density.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: May 2, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventor: Daniel M. Kinzer
  • Patent number: 9621044
    Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: April 11, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Ju Jason Zhang, Daniel M. Kinzer
  • Patent number: 9613891
    Abstract: Electronic packages are formed from a generally planar leadframe having a plurality of leads coupled to a GaN-based semiconductor device, and are encased in an encapsulant. The plurality of leads are interdigitated and are at different voltage potentials.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: April 4, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventor: Daniel M. Kinzer
  • Patent number: 9571093
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: February 14, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9570927
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: February 14, 2017
    Assignee: Navitas Semiconductor, Inc.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Patent number: 9537338
    Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: January 3, 2017
    Assignee: NAVITAS SEMICONDUCTOR INC.
    Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
  • Publication number: 20160372920
    Abstract: An electronic circuit is disclosed and described herein. The circuit includes first and second pins, and an overvoltage protection circuit including a first enhancement-mode transistor. The overvoltage protection circuit is disposed on a GaN-based substrate, and the first enhancement mode transistor is configured to provide overvoltage protection between the first and second pins.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 22, 2016
    Inventors: Daniel M. Kinzer, Santosh Sharma, Jason Zhang, Marco Giandalia