Abstract: Embodiments are disclosed for a method for generating a metal-oxide film. The method includes providing a metal ligand complex having a metal and a reactive moiety. The metal ligand complex is dissolved in a solvent that coats at least part of a substrate. Additionally, the method includes inducing a combustion process involving the metal ligand complex, in the absence of any additional fuel, to generate a film that is formed over at least part of the substrate. The film includes an oxide of the metal.

Abstract: Candidate material for polymerization can be received. One or more desired features in the candidate material can be identified. A machine learning model can be trained to generate a new material having one or more of the desired features. Permissively, the candidate material can be determined from running a machine learning classification model that ranks a plurality of material as candidates. Permissively, the generated new material can be input to the machine learning classification model, for the machine learning classification model to include in ranking the plurality of material as candidates.

Abstract: A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

Abstract: A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.

Abstract: Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art.

Abstract: Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art.

Abstract: The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.

Abstract: Provided are sulfonamide-containing photoresist compositions for use in lithographic processes that have improved properties for high resolution, low blur imaging. Also provided are alcohol-soluble photoresists for resist-on-resist applications.

Abstract: Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art.

Abstract: Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

Abstract: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

Abstract: A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.

Abstract: Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain.