Abstract: A method of creating a virtual profile library includes obtaining a reference signal. The reference signal was generated by measuring a signal off a reference structure on a semiconductor wafer with a metrology device. The reference signal is compared to a plurality of signals in a first library. The comparison is stopped if a first matching criteria is met. The reference signal is compared to a plurality of signals in a second library. The comparison is stopped if a second matching criteria is met. A virtual profile data space is created when the first and second matching criteria are not met. The virtual profile data space is created using differences between a profile data space associated with the first library and a profile data space associated with the second library. A first virtual profile signal is created in the virtual profile data space. A virtual profile shape and/or virtual profile parameters is created based on the first virtual profile signal.

Abstract: A method of using a virtual profile library to determine the profile of an integrated circuit structure includes measuring a signal off the structure with a metrology device. The measurement generates a measured signal. The measured signal is compared to a plurality of signals in at least one library. The comparison is stopped if a matching criteria is met. A subset of a virtual profile data space associated with the virtual profile library is determined when a matching criteria is not met. The subset is determined using profile data space associated with the at least one library. A virtual profile signal of the subset of the virtual profile data space is selected. A virtual profile shape and/or virtual profile parameters are determined based on the virtual profile signal. A difference is calculated between the measured signal and the virtual profile signal. The difference is compared to a virtual profile library creation criteria.

Abstract: A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract: The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract: A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.

Abstract: The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.