Patents by Inventor Daniele Mauri

Daniele Mauri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11514934
    Abstract: The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: November 29, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Ming Mao, Chen-Jung Chien, Daniele Mauri, Goncalo Marcos Baião De Albuquerque, Chih-Ching Hu, Anup Ghosh Roy, Yung-Hung Wang
  • Patent number: 11514935
    Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A read head includes a first reader, an insulating separation layer, and a second reader disposed above the insulating separation layer. The second reader includes a magnetic seed layer and a cap layer. The second reader includes a first upper free layer disposed between the magnetic seed layer and the cap layer, and a second upper free layer disposed between the first upper free layer and the cap layer. The second reader includes a barrier layer. In one implementation the second reader includes an antiferromagnetic (AFM) layer disposed between the magnetic seed layer and the insulating separation layer to pin the magnetic seed layer.
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: November 29, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Xiaoyong Liu, Ji Li, Goncalo Marcos Baião De Albuquerque, Daniele Mauri, Yukimasa Okada
  • Patent number: 11514933
    Abstract: The present disclosure generally relates to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Recessed from the DFL sensor, and from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB bulk layer includes a first bulk layer and a second bulk layer, the first bulk layer having a different density relative to the second bulk layer.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: November 29, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chen-Jung Chien, Ming Mao, Daniele Mauri
  • Patent number: 11493573
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: November 8, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ann Lorraine Carvajal, Ming Mao, Chen-Jung Chien, Yuankai Zheng, Ronghui Zhou, Dujiang Wan, Carlos Corona, Daniele Mauri, Ming Jiang
  • Patent number: 11495252
    Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: November 8, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Yuankai Zheng, Ming Mao, Daniele Mauri, Chih-Ching Hu, Chen-Jung Chien
  • Patent number: 11428758
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: August 30, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Daniele Mauri, Ming Jiang
  • Patent number: 11430470
    Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: August 30, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Xiaoyong Liu, Ji Li, Changhe Shang, Daniele Mauri, Yukimasa Okada
  • Patent number: 11410690
    Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: August 9, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Chih-Ching Hu, Yung-Hung Wang, Ming Mao, Guanxiong Li, Daniele Mauri, Xiaoyong Liu, Yukimasa Okada, Anup Roy, Chen-Jung Chien, Hongxue Liu
  • Patent number: 11385305
    Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 12, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Yuankai Zheng, Christian Kaiser, Zhitao Diao, Chih-Ching Hu, Chen-Jung Chien, Yung-Hung Wang, Dujiang Wan, Ronghui Zhou, Ming Mao, Ming Jiang, Daniele Mauri
  • Patent number: 11385306
    Abstract: Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 ? or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: July 12, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Daniele Mauri, Lei Wang, Yuankai Zheng, Christian Kaiser, Chih-Ching Hu, Ming Mao, Ming Jiang, Petrus Antonius Van Der Heijden
  • Publication number: 20220115035
    Abstract: The present disclosure generally relates to a read head assembly having a dual free layer (DFL) structure disposed between a first shield and a second shield at a media facing surface. The read head assembly further comprises a rear hard bias (RHB) structure disposed adjacent to the DFL structure recessed from the media facing surface, where an insulation layer separates the RHB structure from the DFL structure. The insulation layer is disposed perpendicularly between the first shield and the second shield. The DFL structure comprises a first free layer and a second free layer having equal stripe heights from the media facing surface to the insulation layer. The RHB structure comprises a seed layer, a bulk layer, and a capping layer. The capping layer and the insulation layer prevent the bulk layer from contacting the second shield.
    Type: Application
    Filed: February 24, 2021
    Publication date: April 14, 2022
    Inventors: Ming MAO, Chen-Jung CHIEN, Daniele MAURI, Goncalo Marcos BAIÃO DE ALBUQUERQUE
  • Patent number: 11275130
    Abstract: The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: March 15, 2022
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Xiaoyong Liu, Quang Le, Zhigang Bai, Daniele Mauri, Zhanjie Li, Kuok San Ho, Thao A. Nguyen, Rajeev Nagabhirava
  • Publication number: 20220078348
    Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
    Type: Application
    Filed: November 19, 2021
    Publication date: March 10, 2022
    Applicant: Western Digital Technologies, Inc.
    Inventors: Quang LE, Rajeev NAGABHIRAVA, Kuok San HO, Zhigang BAI, Zhanjie LI, Xiaoyong LIU, Daniele MAURI
  • Publication number: 20220028418
    Abstract: The present disclosure generally relates to a read head of a data storage device. The read head includes a read sensor sandwiched between two shields. The shields can have different materials as well as a different number of layers. Furthermore the shields can be fabricated by different processes and have different heights and thicknesses. The ratio of the thickness to the height for the shields are substantially identical to ensure that the saturation field are substantially identical and balanced.
    Type: Application
    Filed: September 20, 2021
    Publication date: January 27, 2022
    Applicant: Western Digital Technologies, Inc.
    Inventors: Xiaoyong LIU, Goncalo BAIAO DE ALBUQUERQUE, Daniele MAURI, Yukimasa OKADA
  • Publication number: 20220005501
    Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.
    Type: Application
    Filed: September 2, 2021
    Publication date: January 6, 2022
    Applicant: Western Digital Technologies, Inc.
    Inventors: Xiaoyong LIU, Ji LI, Changhe SHANG, Daniele MAURI, Yukimasa OKADA
  • Publication number: 20220005500
    Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
    Type: Application
    Filed: September 20, 2021
    Publication date: January 6, 2022
    Applicant: Western Digital Technologies, Inc.
    Inventors: Yuankai ZHENG, Ming MAO, Daniele MAURI, Chih-Ching HU, Chen-Jung CHIEN
  • Publication number: 20210405131
    Abstract: The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.
    Type: Application
    Filed: June 25, 2020
    Publication date: December 30, 2021
    Inventors: Xiaoyong LIU, Quang LE, Zhigang BAI, Daniele MAURI, Zhanjie LI, Kuok San HO, Thao A. NGUYEN, Rajeev NAGABHIRAVA
  • Publication number: 20210409602
    Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 30, 2021
    Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri
  • Patent number: 11209505
    Abstract: A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: December 28, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Daniele Mauri, Yuankai Zheng, Lei Wang, Christian Kaiser
  • Patent number: 11212447
    Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: December 28, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri