Patents by Inventor Daniele Mauri
Daniele Mauri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210405131Abstract: The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.Type: ApplicationFiled: June 25, 2020Publication date: December 30, 2021Inventors: Xiaoyong LIU, Quang LE, Zhigang BAI, Daniele MAURI, Zhanjie LI, Kuok San HO, Thao A. NGUYEN, Rajeev NAGABHIRAVA
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Publication number: 20210409602Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.Type: ApplicationFiled: June 29, 2020Publication date: December 30, 2021Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri
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Patent number: 11209505Abstract: A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.Type: GrantFiled: December 27, 2019Date of Patent: December 28, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Daniele Mauri, Yuankai Zheng, Lei Wang, Christian Kaiser
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Patent number: 11212447Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.Type: GrantFiled: June 29, 2020Date of Patent: December 28, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri
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Publication number: 20210390978Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).Type: ApplicationFiled: June 11, 2020Publication date: December 16, 2021Inventors: Chih-Ching HU, Yung-Hung WANG, Ming MAO, Guanxiong LI, Daniele MAURI, Xiaoyong LIU, Yukimasa OKADA, Anup ROY, Chen-jung CHIEN, Hongxue LIU
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Patent number: 11199594Abstract: Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.Type: GrantFiled: December 27, 2019Date of Patent: December 14, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Daniele Mauri, Alexander M. Zeltser, Goncalo Baiao De Albuquerque, Yuankai Zheng, Christian Kaiser
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Patent number: 11170807Abstract: The present disclosure generally relates to a read head of a data storage device. The read head includes a read sensor sandwiched between two shields. The shields can have different materials as well as a different number of layers. Furthermore the shields can be fabricated by different processes and have different heights and thicknesses. The ratio of the thickness to the height for the shields are substantially identical to ensure that the saturation field are substantially identical and balanced.Type: GrantFiled: June 23, 2020Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Xiaoyong Liu, Goncalo Baiao De Albuquerque, Daniele Mauri, Yukimasa Okada
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Patent number: 11169228Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.Type: GrantFiled: December 30, 2019Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Yung-Hung Wang, Daniele Mauri, Ming Mao, Chen-jung Chien, Yuankai Zheng, Chih-Ching Hu, Carlos Corona, Matthew Stevenson, Ming Jiang
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Patent number: 11169227Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.Type: GrantFiled: December 30, 2019Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Chih-Ching Hu, Yung-Hung Wang, Yuankai Zheng, Chen-jung Chien, Ming Mao, Daniele Mauri, Ming Jiang
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Patent number: 11170806Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.Type: GrantFiled: May 20, 2020Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Yuankai Zheng, Ming Mao, Daniele Mauri, Chih-Ching Hu, Chen-Jung Chien
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Patent number: 11172131Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.Type: GrantFiled: June 29, 2020Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri
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Patent number: 11170808Abstract: The present disclosure generally relates to magnetic read heads comprising a dual free layer (DFL) structure. The magnetic read head comprises a first shield, a second shield, and a DFL structure disposed between the first and second shields. The DFL structure comprises a magnetic seed layer, a first free layer, and a second free layer. A non-magnetic spacer layer is disposed between and in contact with the first shield and the magnetic seed layer of the DFL structure at a media facing surface. A material and a thickness of the non-magnetic spacer layer is selected to control the coupling between the first shield and the magnetic seed layer of the DFL structure.Type: GrantFiled: January 14, 2021Date of Patent: November 9, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Xiaoyong Liu, Ji Li, Goncalo Marcos Baião de Albuquerque, Daniele Mauri, Yukimasa Okada
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Patent number: 11127422Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.Type: GrantFiled: July 1, 2020Date of Patent: September 21, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Xiaoyong Liu, Ji Li, Changhe Shang, Daniele Mauri, Yukimasa Okada
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Patent number: 11087785Abstract: The present disclosure generally related to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Behind the DFL sensor, and away from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB seed layer has a thickness of between 26 Angstroms and 35 Angstroms. The RHB seed layer ensures the read head has a strong RHB magnetic field that can be uniformly applied.Type: GrantFiled: June 29, 2020Date of Patent: August 10, 2021Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Ming Mao, Daniele Mauri, Chen-Jung Chien, Guanxiong Li
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Publication number: 20210201943Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.Type: ApplicationFiled: May 20, 2020Publication date: July 1, 2021Inventors: Yuankai ZHENG, Ming MAO, Daniele MAURI, Chih-Ching HU, Chen-Jung CHIEN
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Patent number: 10957346Abstract: Disclosed herein are magnetic recording devices and methods of using them. A magnetic recording device comprises a main pole extending to an air-bearing surface (ABS), a trailing shield extending to the ABS, a write-field-enhancing structure disposed between and coupled to the main pole and the trailing shield at the ABS, a write coil configured to magnetize the main pole, a write current control circuit coupled to the write coil and configured to apply a write current to the write coil, wherein the write current comprises a write pulse, and a bias current control circuit coupled to the write-field-enhancing structure and configured to apply a bias current to the write-field-enhancing structure, wherein the bias current comprises a driving pulse offset in time from the write pulse by a delay, wherein the delay substantially coincides with an expected magnetization switch-time lag of a free layer of the write-field-enhancing structure.Type: GrantFiled: March 29, 2020Date of Patent: March 23, 2021Assignee: Western Digital Technologies, Inc.Inventors: Gonçalo Marcos Baião De Albuquerque, Yunfei Ding, Alexander Goncharov, Kuok San Ho, Daniele Mauri, Goran Mihajlovic, Suping Song, Petrus Antonius Van Der Heijden
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Publication number: 20210063508Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.Type: ApplicationFiled: December 30, 2019Publication date: March 4, 2021Inventors: Chih-Ching HU, Yung-Hung WANG, Yuankai ZHENG, Chen-jung CHIEN, Ming MAO, Daniele MAURI, Ming JIANG
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Publication number: 20210063500Abstract: Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.Type: ApplicationFiled: December 27, 2019Publication date: March 4, 2021Inventors: Daniele MAURI, Alexander M. ZELTSER, Goncalo BAIAO DE ALBUQUERQUE, Yuankai ZHENG, Christian KAISER
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Publication number: 20210063504Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.Type: ApplicationFiled: December 18, 2019Publication date: March 4, 2021Inventors: Yuankai ZHENG, Christian KAISER, Zhitao DIAO, Chih-Ching HU, Chen-Jung CHIEN, Yung-Hung WANG, Dujiang WAN, Ronghui ZHOU, Ming MAO, Ming JIANG, Daniele MAURI
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Publication number: 20210063505Abstract: A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.Type: ApplicationFiled: December 27, 2019Publication date: March 4, 2021Inventors: Daniele MAURI, Yuankai ZHENG, Lei WANG, Christian KAISER