Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

Abstract: The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate includes a base substrate, a black matrix and a color filter layer located on the base substrate, a quantum dot layer located on a side of the color filter layer away from the base substrate, a barrier layer located on a side of the black matrix away from the base substrate, and a first inorganic layer, and the first inorganic layer at least includes: a first portion located between the color filter layer and the quantum dot layer; a second portion located on the base substrate and between the quantum dot layer and the barrier layer; and a third portion located on a side of the barrier layer away from the base substrate.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.

Abstract: Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

Abstract: An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer . The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.

Abstract: The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.

Abstract: The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

Abstract: A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.

Abstract: A fixture, a tray and a sputtering system. The fixture is internally provided with a support structure and a clamping structure connected with each other, wherein the clamping structure is configured to clamp a to-be-sputtered substrate; an orthographic projection of the clamping structure on a plane where the support structure is located and the support structure share an superimposed area and are separate in non-superimposed areas; wherein the support structure located in the non-superimposed area and/or the clamping structure located in the non-superimposed area has a first hollowed structure. The fixture is internally provided with the first hollowed structure, such that a part of an area of the to-be-sputtered substrate covered by the fixture may be exposed via the first hollowed structure when the fixture holds the to-be-sputtered substrate, so as to reduce the area of the to-be-sputtered substrate covered by the fixture.

Abstract: A fingerprint recognition device includes a first substrate and at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector including a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer. A side of the photosensitive layer facing away from the first electrode has a curved shape.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

Abstract: The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate includes a base substrate, a black matrix and a color filter layer located on the base substrate, a quantum dot layer located on a side of the color filter layer away from the base substrate, a barrier layer located on a side of the black matrix away from the base substrate, and a first inorganic layer, and the first inorganic layer at least includes: a first portion located between the color filter layer and the quantum dot layer; a second portion located on the base substrate and between the quantum dot layer and the barrier layer; and a third portion located on a side of the barrier layer away from the base substrate.

Abstract: A fingerprint recognition device includes a first substrate and at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector including a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer. A side of the photosensitive layer facing away from the first electrode has a curved shape.

Abstract: The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.