Abstract: A display substrate, a method of manufacturing the same, and a display device are disclosed. The display substrate includes a driving substrate and a micro LED chip, wherein the micro LED chip includes a main body and an electrode pin, a TFT is arranged on the driving substrate, the micro LED chip is coupled to the TFT, and the display substrate further includes: a heat dissipation structure arranged between the micro LED chip and the TFT, wherein the heat dissipation structure is electrically coupled to the electrode pin of the micro LED chip.

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

Abstract: An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

Abstract: The present application provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: a gate electrode; an active layer including a first portion made of polysilicon and a second portion made of amorphous silicon; a source electrode and a drain electrode; and an ohmic contact layer. The second portion of the active layer is in contact with the source electrode and the drain electrode through the ohmic contact layer.

Abstract: The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.

Abstract: A display substrate, a method of manufacturing the same, and a display device are disclosed. The display substrate includes a driving substrate and a micro LED chip, wherein the micro LED chip includes a main body and an electrode pin, a TFT is arranged on the driving substrate, the micro LED chip is coupled to the TFT, and the display substrate further includes: a heat dissipation structure arranged between the micro LED chip and the TFT, wherein the heat dissipation structure is electrically coupled to the electrode pin of the micro LED chip.

Abstract: A display substrate, a method of manufacturing the same and a display device are provided. The display substrate includes a base substrate, a plurality of metal particles dispersedly disposed on the base substrate and forming a discontinuous film, a light shielding layer disposed on a side of the base substrate on which the plurality of metal particles are disposed and covering the plurality of metal particles, and a thin film transistor located on a side of the light shielding layer far away from the base substrate.

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

Abstract: The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.

Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.

Abstract: The present application provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: a gate electrode; an active layer including a first portion made of polysilicon and a second portion made of amorphous silicon; a source electrode and a drain electrode; and an ohmic contact layer. The second portion of the active layer is in contact with the source electrode and the drain electrode through the ohmic contact layer.

Abstract: A display substrate, a method of manufacturing the same and a display device are provided. The display substrate includes a base substrate, a plurality of metal particles dispersedly disposed on the base substrate and forming a discontinuous film, a light shielding layer disposed on a side of the base substrate on which the plurality of metal particles are disposed and covering the plurality of metal particles, and a thin film transistor located on a side of the light shielding layer far away from the base substrate.

Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.

Abstract: Embodiments of the present disclosure disclose a wet etching equipment and a wet etching method. The wet etching equipment includes a metal ion concentration adjusting device configured to adjust the concentration of metal ions in an etching solution, a sprinkler which is connected to the metal ion concentration adjusting device and configured to spray the etching solution. Embodiments of the present disclosure also disclose a wet etching method, comprising steps as follows: adjusting a concentration of metal ions in an etching solution so that an etching rate of a metal to be etched is kept stable; spraying the adjusted etching solution onto the metal to be etched.

Abstract: The present invention provides a wet etching apparatus. The wet etching apparatus comprises: an etching chamber, comprising an etching chamber inlet at a front end and an etching chamber outlet at a rear end, wherein in the etching chamber, a film to be etched on a substrate is subject to etching with an etching liquid; and a decrystallization device, which washes residual etching liquid or etching liquid crystal formed by the etching liquid at the etching chamber inlet and/or etching chamber outlet with a washing liquid. By means of the decrystallization device, residual etching liquid or etching liquid crystal formed by the etching liquid at the etching chamber inlet and the etching chamber outlet can be effectively removed, thus improving operation ratio and cleanness of the apparatus as well as quality of products.