Abstract: Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

Abstract: Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

Abstract: Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

Abstract: A hydrogen-containing chemical species is included in the reactant gas mixture in a plasma-enhanced CVD process for forming a carbon-containing dielectric film. The CVD reactant gas mixture contains silicon, oxygen, hydrogen and carbon atoms for forming a novel carbon-containing silicon oxide film in which both Si—C and Si—H bonds are present. Because dielectric material deposited in accordance with the invention has a significant number of Si—H bonds, which are more robust than Si—C bonds, it is more resistant to undesired etching and other physical changes during fabrication than dielectric material formed by conventional methods. A method in accordance with the invention allows a faster deposition rate. A dielectric film formed in accordance with the invention has enhanced uniformity characteristics and a dielectric constant less than 3.

Abstract: A point-of-use vaporization system for use in Chemical Vapor Deposition having a first delivery member for delivering a liquid precursor to a vaporization point, a second delivery member for separately delivering a solvent to the vaporization point, and a frit for vaporizing the precursor and solvent at the vaporization point.