Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

Abstract: A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. If necessary the photoresist is then sensitized. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. These high spatial frequency transmitted waves can be evanescent, or they can propagate at a steeper obliquity in a higher index medium than is possible in a projected image.

Abstract: Embodiments of the present invention provide a method for performing lumped-process model calibration. The method includes creating a plurality of sub-process models for a set of sub-processes; creating a lumped-process-model incorporating said set of sub-processes; calculating a first set of output patterns from a set of test patterns by using said plurality of sub-process models; calculating a second set of output patterns from said set of test patterns by using said lumped-process-model; and adjusting process parameters used in said lumped-process-model to calculate said second set of output patterns to match said first set of output patterns. A computer system for performing the lumped-process model calibration is also provided.

Abstract: A method is disclosed for forming an array of focusing elements for use in a lithography system. The method involves varying an exposure characteristic over an area to create a focusing element that varies in thickness in certain embodiments. In further embodiments, the method includes the steps of providing a first pattern via lithography in a substrate, depositing a conductive absorber material on the substrate, applying an electrical potential to at least a first portion of the conductive absorber material, leaving a second portion of the conductive material without the electrical potential, and etching the second portion of the conductive material to provide a first pattern on the substrate that is aligned with the first portion of the conductive absorber material.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: A method is disclosed for creating a permanent pattern on a substrate. The method includes the steps of providing an array of photon sources, each of which provides a photon beam, providing an array of focusing elements, each of which focuses an associated photon beam from the array of photon sources onto a substrate, and creating a permanent pattern on a substrate using the array of focusing elements to respectively focus associated photon beams on the substrate.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

Abstract: An optical manipulation system is disclosed that includes an array of focusing elements, which focuses the energy beamlets from an array of beamlet sources into an array of focal spots in order to individually manipulate a plurality of samples on an adjacent substrate.

Abstract: A method is disclosed for forming an array of focusing elements for use in a lithography system. In accordance with an embodiment, the method includes the steps of providing a master element that includes at least one diffractive pattern at a first location with respect to a target surface, illuminating the master element to produce a first diffractive pattern on the target surface at the first location, moving the master element with respect to the target surface to a second location with respect to the target surface, and illuminating the master element to produce a second diffractive pattern on the target surface at the second location.

Abstract: A system and method are disclosed for providing error correction in an imaging system. The system includes an error determination unit for determining an amount of error associated with a spot at (x,y) in a binary pattern to be imaged, a determination unit for determining the location of a nearest exposed spot at (xi, yi) for each spot at (x,y), and a dose modification unit for modifying an exposure dose at the nearest exposed spot at (xi, yi) for each spot at (x,y).

Abstract: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: A maskless lithography system is disclosed that includes an array of blazed diffractive zone plates, each of which focuses an energy beam into an array of images in order to create a permanent pattern on an adjacent substrate in certain embodiments. In further embodiments, an array of apodized diffractive elements may also be used.

Abstract: A system and method are disclosed for providing error correction in an imaging system. The system includes an error determination unit for determining an amount of error associated with a spot at (x,y) in a binary pattern to be imaged, a determination unit for determining the location of a nearest exposed spot at (xi, yi) for each spot at (x,y), and a dose modification unit for modifying an exposure dose at the nearest exposed spot at (xi, yi) for each spot at (x,y).

Abstract: A maskless lithography system is disclosed that includes an array of focusing elements, each of which focuses an energy beam from an array of sources into an array of focal spots in order to create a permanent pattern on an adjacent substrate.

Abstract: An optical manipulation system is disclosed that includes an array of focusing elements, which focuses the energy beamlets from an array of beamlet sources into an array of focal spots in order to individually manipulate a plurality of samples on an adjacent substrate.

Abstract: A maskless lithography system is disclosed that includes an array of focusing elements, each of which focuses an energy beam from an array of sources into an array of focal spots in order to create a permanent pattern on an adjacent substrate.

Abstract: A method is disclosed for forming an array of focusing elements for use in a lithography system. In accordance with an embodiment, the method includes the steps of providing a master element that includes at least one diffractive pattern at a first location with respect to a target surface, illuminating the master element to produce a first diffractive pattern on the target surface at the first location, moving the master element with respect to the target surface to a second location with respect to the target surface, and illuminating the master element to produce a second diffractive pattern on the target surface at the second location.