Abstract: A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.

Abstract: Articles formed from powders containing tungsten and at least one binder. In some embodiments, the article contains at least one metallic binder. In some embodiments, the article contains at least one non-metallic binder, such as a polymeric binder. In some embodiments, the article contains both a metallic binder and a non-metallic binder. In some embodiments the article is a firearms projectile, such as a bullet or shot, which may be ferromagnetic or non-ferromagnetic, which may be frangible or infrangible, and which may be jacketed or unjacketed. In some embodiments, the article is a radiation shield, and in other embodiments, the article is a weight or foundry article. In some embodiments, the article has a density in the range of approximately 8 g/cc and approximately 15 g/cc.

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract: In some embodiments, a mechanical adapter may be used to couple a first circuit board (e.g., a motherboard) to a second circuit board (e.g., a daughtercard) in a module. The mechanical adapter may have a mounting portion and a configurable portion. In some embodiments, the mounting portion may be similar for multiple configurations of the mechanical adapter. In various embodiments, the motherboard may be similar for different modules. For example, the mechanical adapter may be configured to mount a specific type of daughtercard in the configurable portion, while the mounting portion may be similar to mounting portions on other mechanical adapters with different configurations for different daughtercards (e.g., the motherboard may be similar for each of the different configurations). Therefore, in various embodiments, a common mounting portion may mate to a common motherboard configuration for different products each configured to mount a different daughtercard.

Abstract: A grating system includes a first welded subassembly and a second non-welded subassembly joined to one another. The first subassembly includes spaced elongated bearing bars and spaced elongated cross bars extending transversely to the bearing bars. The second subassembly includes spaced elongated filler bars and spaced elongated cross bars extending transversely to the filler bars. The filler bars extend in the same direction as the bearing bars and are disposed in sets between adjacent bearing bars. The bearing bars include spaced notches in which are received the first subassembly cross bars and the second subassembly cross bars, which are aligned above the first subassembly cross bars. The subassemblies have respective upper surfaces which are flush with one another. The first subassembly is configured to support vehicle traffic and the second subassembly is configured to support pedestrian traffic.

Abstract: Embodiments of the present invention relate to methods and systems suitable for de-convoluting a convoluted spectrum, such as by way of example, data obtained from a mass spectrometer.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

Abstract: Tungsten-containing articles and manufacturing processes for tungsten-containing articles. The articles may include firearms projectiles, such as shot, shot slugs, bullets, big game bullets, lead-equivalent bullets, black powder bullets, etc.; radiation shields; and weights, such as fishing weights, dart weights, golf club weights, wheel weights, stabilizers, etc. The projectiles may be at least one of non-toxic, lead-free, ferromagnetic, frangible, sintered, sealed, plated, and/or jacketed. The manufacturing processes include various powder-metallurgy and molten metal processes, and sealing, reforming, intermediate structure, reshaping, plating, working, and jacketing steps which may be selectively utilized. The processes may include forming an intermediate structure and reshaping the structure under different pressure or process to a desired shape.

Abstract: An air duct for a motor vehicle air dryer has an outer shell defining an inner surface. A porous, fluid permeable lining for attenuating noise caused by turbulent air flow through the air duct is positioned on the shell inner surface, and defines an inner surface. The lining is retained in place by a relatively rigid expanded mesh adjacent the inner surface of the lining. The interior lining and mesh is preferably removable from the outer shell, but may be permanently mounted therein.

Abstract: Firearm slugs formed from a non-toxic lead substitute that includes tungsten. In some embodiments, the firearm slug is formed with a recessed back portion, thus shifting an increased percentage of the slug's net mass toward the front of the slug. In some embodiments, the firearm slug is formed with a recessed front portion. In some embodiments, the slug is a component of a slug cartridge that includes a slug cup. The slug must have a density that is less than, equal to, or greater than lead, or a lead-antimony alloy used for firearm projectiles. In some embodiments, the slug is formed via powder metallurgy from a powder that includes at least one tungsten-containing component and at least one binder. In some embodiments, the slug is cast or otherwise formed from a molten feedstock that includes at least one tungsten-containing component. In some embodiments, the slug is frangible.

Abstract: A compliant system of workholders for use with woodworking, metalworking, or other machinery each of which pushes against a workpiece with substantially constant pressure while moving in and out to accommodate variation in the size of the workpiece. Preferably, the workholder uses a feather board mounted on one or more sliding guide rods. Rollers, a low friction shoe, or other elements may also be used to contact the workpiece. A pneumatic cylinder is the preferred mechanism for applying outward pressure to the feather board. The workholder will retract on activation of a momentary switch by the user and will remain retracted for an adjustable time period to allow positioning of the workpiece.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

Abstract: Medium- and high-density articles are formed from melting and casting alloys containing tungsten, iron, nickel and optionally manganese and/or steel. In some embodiments, the articles have densities in the range of 8-10.5 g/cm3, and in other embodiments, the articles have densities in the range of 10.5-15 g/cm3. In some embodiments, the articles are ferromagnetic, and in others the articles are not ferromagnetic. In some embodiments, tungsten forms the largest weight percent of the alloy, and in other embodiments the alloy contains no more than 50 wt % tungsten. In some embodiments, the articles are shell shot.

Abstract: Methods for producing medium-density articles from recovered high-density tungsten alloy (WHA) material, and especially from recovered WHA scrap. In one embodiment of the invention, the method includes forming a medium-density alloy from WHA material and one or more medium- to low-density metals or metal alloys. In another embodiment, medium-density grinding media, such as formed from the above method, is used to mill WHA scrap and one or more matrix metals into particulate that may be pressed and, in some embodiments, sintered to form medium-density articles therefrom.

Abstract: A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.

Abstract: A compliant system of workholders for use with woodworking, metalworking, or other machinery each of which pushes against a workpiece with substantially constant pressure while moving in and out to accommodate variation in the size of the workpiece. Preferably, the workholder uses a feather board mounted on one or more sliding guide rods. Rollers, a low friction shoe, or other elements may also be used to contact the workpiece. A pneumatic cylinder is the preferred mechanism for applying outward pressure to the feather board. The workholder will retract on activation of a momentary switch by the user and will remain retracted for an adjustable time period to allow positioning of the workpiece.

Abstract: Manufacturing processes for articles that are formed from compositions of matter that include powders containing tungsten and at least one binder, as well as articles formed thereby. In some embodiments, the processes include compacting the mixture of powders under a first pressure to yield a desired intermediate structure, then reshaping the structure under a second pressure that is lower than the first pressure to yield the desired article. The compacting steps may include punches and/or dies having different configurations and/or materials of construction. The composition of matter preferably is selected to reflow, or be reshaped, without fragmenting or otherwise disintegrating into discrete particles or particulate. In some embodiments, the compacted intermediate structure and/or final article has an extrusion constant of less than 30,000 psi. In some embodiments, the mixture of powders has an ASTM Hall flowmeter reading for fifty grams through a cone (without tapping) of less than 18 seconds.

Abstract: Tungsten-containing articles and manufacturing processes for tungsten-containing articles. The articles may include firearms projectiles, such as shot, shot slugs, bullets, big game bullets, lead-equivalent bullets, black powder bullets, etc.; radiation shields; and weights, such as fishing weights, dart weights, golf club weights, wheel weights, stabilizers, etc. The projectiles may be at least one of non-toxic, lead-free, ferromagnetic, frangible, sintered, sealed, plated, and/or jacketed. The manufacturing processes include various powder-metallurgy and molten metal processes, and sealing, reforming, intermediate structure, reshaping, plating, working, and jacketing steps which may be selectively utilized. The processes may include forming an intermediate structure and reshaping the structure under different pressure or process to a desired shape.

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.