Abstract: Compounds 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 are made using a simplified synthetic strategy which is readily scalable. On reaction with a suitable transition metal species, a 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 molecule provides an organotransition metal complex comprising a 1,2-(C6F5)(alkyl) substituted cyclopentadienyl ligand, which is active toward olefin polymerization.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: In one embodiment, a method comprises providing a chemical phase deposition copper precursor within a chemical phase deposition chamber; and depositing a metal film onto a substrate with the copper precursor by a chemical phase deposition process.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: An iridium precursor, and an iridium layer from the precursor is described. The Ir(I) in the precursor becomes Ir(III) in a reduction pathway before forming an Ir(0) layer.

Abstract: A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.