Abstract: The present invention relates to a method used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. In one aspect, the method involves contacting the substrate with a composition are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: An arrangement and method for managing the tribology associated with a chemical mechanical planarization (CMP) process continuously monitors and modifies the properties of a polishing slurry in order to assist in controlling the removal rate associated with the CMP process. The viscosity of slurry as it leaves the CMP system (“spent slurry”) and the material removal rate associated with the semiconductor wafer are measured, and then the viscosity of the incoming slurry is adjusted if the measured material removal rate differs from a desired removal rate. If the removal rate is considered to be too fast, the viscosity of the fresh slurry being dispensed onto polishing pad is decreased; alternatively, if the removal rate is too slow, the viscosity is increased. As an alternative to modifying the viscosity of the slurry (or, perhaps in addition to modifying the viscosity), a lubricant may be added to the slurry to slow down the removal rate.

Abstract: Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

Abstract: The evacuation properties of an abrasive disk are improved by forming its apertures to exhibit a configuration that will direct process fluids onto or away from a workpiece (or contact) interface through capillary action, surface tension/affinity, and/or boundary layer pump actions. The capillary action is accomplished by modifying the geometries of the apertures to form capillary tubes, where the orientation and lift angle of the capillary tubes is controlled to improve the flow of relatively thin layers of liquids. The surface tension/affinity between a liquid material and the abrasive disk is controlled by modifying the through-hole apertures to exhibit a serrated inner surface, which will decrease the attraction between the material of the abrasive disk and the process liquid.

Abstract: The invention relates to aqueous, buffered, fluoride containing compositions having a pH of greater than 7.0 to about 11.0. In certain embodiments, the buffered compositions have an extended worklife because pH dependent attributes such as oxide and metal etch rates are stable so long as the pH remains stable.

Abstract: The invention relates to aqueous, buffered, fluoride containing compositions having a pH of greater than 7.0 to about 11.0. In certain embodiments, the buffered compositions have an extended worklife because pH dependent attributes such as oxide and metal etch rates are stable so long as the pH remains stable.

Abstract: Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

Abstract: An apparatus and method for collecting and analyzing the effluent stream created by a chemical mechanical planarization (CMP) process performs a continuous measurement of at least one effluent characteristic and integrates the results over time to create a volumetric analysis of the planarization process. The volumetric analysis can be used as feedback/feedforward signals to control the planarization process itself (e.g., endpoint detection based upon an known initial thickness of film material), create alarm signals for out-of-range measurements, and/or waste stream indicators useful in treating the effluent prior to discharge (e.g., determining a pH correction).

Abstract: A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid selected from a carboxylic acid or a polybasic acid and an ammonium salt of the acid in a molar ratio of acid to ammonium salt ranging from 10:1 to 1:10; an organic polar solvent that is miscible in all proportions in water; a fluoride, and water wherein the composition has a pH ranging from about 3 to about 7.

Abstract: Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.

Abstract: The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: The invention relates to aqueous, buffered, fluoride containing compositions having a pH of greater than 7.0 to about 11.0. In certain embodiments, the buffered compositions have an extended worklife because pH dependent attributes such as oxide and metal etch rates are stable so long as the pH remains stable.

Abstract: The present invention relates to compositions useful in removing photoresist and organic and inorganic residues and processes for removal of photoresists and etch residues. The compositions are aqueous, acidic compositions containing fluoride and organic polar solvents. The compositions are free of glycols and have a low surface tension and viscosity. Corrosion inhibitors are optionally present.

Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2, an additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.

Abstract: The invention relates to a method useful in removing etch residue from etcher equipment parts. The compositions used are aqueous, acidic compositions containing flouride and polar, organic solvents. The compositions are free of glycols and hydroxyl amine and have a low surface tension and viscosity.

Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including carbon dioxide, an additive for removing the residues and a co-solvent dissolving the additive in said carbon dioxide at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. A composition for removing residues from the microstructure of an object is also provided.

Abstract: The present invention relates to compositions useful in removing photoresist and organic and inorganic residues and processes for removal of photoresists and etch residues. The compositions are aqueous, acidic compositions containing fluoride and organic polar solvents. The compositions are free of glycols and have a low surface tension and viscosity. Corrosion inhibitors are optionally present.

Abstract: The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2, an additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.

Abstract: A stripping and cleaning composition for the removal of residue from metal and dielectric surfaces in the manufacture of semi-conductors and microcircuits. The composition is an aqueous system including organic polar solvents including corrosive inhibitor component from a select group of aromatic carboxylic acids used in effective inhibiting amounts. A method in accordance with this invention for the removal of residues from metal and dielectric surfaces comprises the steps of contacting the metal or dielectric surface with the above inhibited compositions for a time sufficient to remove the residues.