Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.

Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators including such SiGe quantum wells can be operated at temperatures other than room temperature. Such temperature control is preferred for providing optical modulators that operate in the telecommunication C band (˜1530 nm to ˜1565 nm).

Abstract: An electro-optic semiconductor device (e.g., an optical modulator) having side access and beam propagation within the device is provided. Side access for the optical input and/or output facilitates disposition of electronic circuitry and/or heat sinking structures on the top and bottom surfaces of the modulator. Internal beam propagation instead of internal waveguiding advantageously simplifies optical coupling and alignment to the modulator. Interaction length within the device is preferably enhanced by passing through the device active region at a relatively shallow angle. The internally propagating beam is reflected from a reflective face parallel to the device active region. The side faces can be perpendicular or tilted with respect to the reflective face. Tilted side faces are preferably tilted to provide external beam paths parallel to the reflective face. Internal reflection from an angled side face can be employed to provide configurations having one side port and one top or bottom port.

Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.

Abstract: An optical switch assembly is provided having a plurality of optoelectronic switching nodes. Each node is a three terminal optical device having a first optical input, a second optical input and an optical output. Each node can be electrically activated or deactivated via an electrical control input. Each node has a transmittance between its second optical input and its optical output. This transmittance depends on the signal at the first optical input if the node is activated, and is independent of the first optical input if the node is deactivated. Thus modulation at the first optical input can be selectively imposed on the optical output. The switch includes at least two chains of nodes, each chain having two or more nodes connected in series such that each pair of adjacent nodes is connected from optical output to second optical input. Switches according to the invention can be configured as optical crossbar switches or optical routers.

Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.

Abstract: An optical switch assembly is provided having a plurality of optoelectronic switching nodes. Each node is a three terminal optical device having a first optical input, a second optical input and an optical output. Each node can be electrically activated or deactivated via an electrical control input. Each node has a transmittance between its second optical input and its optical output. This transmittance depends on the signal at the first optical input if the node is activated, and is independent of the first optical input if the node is deactivated. Thus modulation at the first optical input can be selectively imposed on the optical output. The switch includes at least two chains of nodes, each chain having two or more nodes connected in series such that each pair of adjacent nodes is connected from optical output to second optical input. Switches according to the invention can be configured as optical crossbar switches or optical routers.

Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.

Abstract: Optical devices having integrated waveguide and active areas are realized using a crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a growth region is formed such that the region is isolated from a silicon portion of silicon material. The region extends from a silicon-based seeding area of the substrate. A semiconductor material is deposited on a Silicon-based seeding area and in the growth region. A single crystalline material is formed from the deposited semiconductor material by heating and cooling the deposited semiconductor material while directing growth of the semiconductor material from the Silicon-based seeding area and through an opening sufficiently narrow to mitigate crystalline defects. A light-communicating device is formed by etching the silicon material over an insulator layer and etching the single crystalline material.

Abstract: An electronically tuned, wavelength-dependent optical detector is provided. The electronically tuned, wavelength-dependent optical detector is a modified metal-semiconductor-metal photodetector including a comb-like metal electrode at a common voltage and metal electrodes each supplied with a control voltage by a voltage means. The wavelength to be detected in an optical input illuminating the detector is selected based on the set of control voltages applied to the metal electrodes. In another embodiment of the invention, the wavelength to be detected with the electronically tuned, wavelength-dependent optical detector is also selected using a standing wave generator, such as an interferometer, to produce a spatially varying light intensity on the surface of the electronically tuned, wavelength-dependent optical detector. Electronic wavelength demultiplexing is also provided.

Abstract: An apparatus and method for spatially shifting a light using a multilayer thin-film stack of at least two materials having unequal optical properties, such as indices of refraction and absorption coefficients. The apparatus has an input face for admitting the light into the apparatus and an impedance matching mechanism for maximizing the in-coupling of the light into the multilayer thin-film stack at a non-normal incidence. The non-normal incidence is sufficient to generate a spatial shift of the light in the multilayer thin-film stack as a function of at least one light parameter, such as wavelength and/or polarization of the light, thereby separating the light into light components. The spatial shift is achieved by any one or any combination of effects including superprism, turning point and energy confinement. These effects are achieved in the multilayer thin-film stack by appropriately engineering its layer sequence.

Abstract: A display lighting system is provided that assembles and installs easily. Luminaires of the system include a pair of arms and a wireway enclosure positioned between the arms at one end of the arms. The enclosure is dimensioned to enclose electrical wiring and at least one electrical component, such as a ballast or transformer. A lamp housing can be attached to the arms at the end opposite the enclosure. An uplight lamp housing is easily mounted to the arms anywhere between the wireway enclosure and lamp housing. Wiring between the enclosure and lamp housings is carried inconspicuously in a trough along the inside of one or both arms. Wiring between adjacent luminaires runs conveniently through nipple connectors connecting adjacent enclosures. Optional accent lighting is also provided.

Abstract: A scheme (systems and methods) for passively aligning one or more optical devices with a corresponding number of optical lenses in an accurate and efficient manner is described. By this approach, the invention avoids the often labor-intensive and costly steps required by conventional active alignment techniques that attempt to align the optical devices to the optical fibers. In one aspect, an optoelectronic device includes an optical device system, an optical lens system and a plurality of solder bumps disposed therebetween. The optical device system includes an optical device substrate supporting one or more optical devices and a solderable metallization pattern having a spatial arrangement with respect to the one or more optical devices. The optical lens system includes one or more optical lenses and a device bonding surface supporting a solderable metallization pattern having a spatial arrangement with respect to the one or more optical lenses.

Abstract: This invention relates to a semiconductor device and method for switching or modulating optical signals. The semiconductor device has a photodetector having a low electrical capacitance Cd, a detector absorbing layer for absorbing an optical signal beam, a modulator having a low capacitance Cm and a modulator absorbing layer exhibiting an electric field-dependent absorption coefficient. The modulator absorbing layer is used for absorbing an optical power beam, which is to be modulated or switched. The device has a low resistivity region between the photodetector and the modulator such that the electric field-dependent absorption coefficient is altered uniformly and rapidly throughout the modulator absorbing layer during absorption of the optical signal beam in the detector absorbing layer. The device is equipped with a high resistivity element in series with the low resistivity region for minimizing a net charge flow to and from the device.

Abstract: An apparatus and method for spatially shifting a light using a multilayer thin-film stack of at least two materials having unequal optical properties, such as indices of refraction and absorption coefficients. The apparatus has an input face for admitting the light into the apparatus and an impedance matching mechanism for maximizing the in-coupling of the light into the multilayer thin-film stack at a non-normal incidence. The non-normal incidence is sufficient to generate a spatial shift of the light in the multilayer thin-film stack as a function of at least one light parameter, such as wavelength and/or polarization of the light, thereby separating the light into light components. The spatial shift is achieved by any one or any combination of effects including superprism, turning point and energy confinement. These effects are achieved in the multilayer thin-film stack by appropriately engineering its layer sequence.

Abstract: A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.

Abstract: A display lighting system is provided that assembles and installs easily. Luminaires of the system include a pair of arms and a wireway enclosure positioned between the arms at one end of the arms. The enclosure is dimensioned to enclose electrical wiring and at least one electrical component, such as a ballast or transformer. A lamp housing can be attached to the arms at the end opposite the enclosure. An uplight lamp housing is easily mounted to the arms anywhere between the wireway enclosure and lamp housing. Wiring between the enclosure and lamp housings is carried inconspicuously in a trough along the inside of one or both arms. Wiring between adjacent luminaires runs conveniently through nipple connectors connecting adjacent enclosures. Optional accent lighting is also provided.

Abstract: We describe a novel approach for tunable polarization mode dispersion (PMD) compensation using multi-layered thin-film dielectric reflectors. This design can compensate for both the first-order PMD and the second-order PMD in ultrahigh speed optical fiber communication systems. Built-in cavity layers constitute optical resonators localizing electromagnetic energy at a specific frequency in the cavity region and therefore generating dispersive reflection. The two principal states of polarization in this system, TE and TM modes, demonstrate different dispersion responses for oblique incidences, which can be readily tuned to offset the PMD accumulated in fiber links. Various schemes of dispersion generation could be designed using single-cavity cascading or with coupled multiple-cavity resonator structures.

Abstract: A compact disk duplication system with a compact disk drive with an extendible disk tray for copying data onto a batch of compact disks, the disk duplication system having a disk transport unit with an XYZ transport mechanism, the transport unit having a deck, a frame and a housing, the transport mechanism including a carriage displaceable from side to side relative to the deck, an elevator device carried by the carriage having an elevator cage displaceable up and down relative to the deck, and a tram device having a cross beam on the elevator cage with a tram having a disk pickup mechanism displaceable fore and aft relative to the deck with the displacements of the carriage, elevator cage and tram being controlled for automatic operation by controlled drive mechanisms.

Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.