Patents by Inventor David A. B. Miller

David A. B. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7457487
    Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: November 25, 2008
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: David A. B. Miller, Yu-Hsuan Kuo, James S. Harris, Jr.
  • Publication number: 20080247753
    Abstract: An optical switch assembly is provided having a plurality of optoelectronic switching nodes. Each node is a three terminal optical device having a first optical input, a second optical input and an optical output. Each node can be electrically activated or deactivated via an electrical control input. Each node has a transmittance between its second optical input and its optical output. This transmittance depends on the signal at the first optical input if the node is activated, and is independent of the first optical input if the node is deactivated. Thus modulation at the first optical input can be selectively imposed on the optical output. The switch includes at least two chains of nodes, each chain having two or more nodes connected in series such that each pair of adjacent nodes is connected from optical output to second optical input. Switches according to the invention can be configured as optical crossbar switches or optical routers.
    Type: Application
    Filed: January 19, 2006
    Publication date: October 9, 2008
    Inventors: Hilml Volkan Demir, David A.B. Miller, Vijit Ashok Sabnis
  • Publication number: 20080232735
    Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.
    Type: Application
    Filed: September 19, 2006
    Publication date: September 25, 2008
    Inventors: David A.B. Miller, Yu-Hsuan Kuo, James S. Harris
  • Patent number: 7418166
    Abstract: Optical devices having integrated waveguide and active areas are realized using a crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a growth region is formed such that the region is isolated from a silicon portion of silicon material. The region extends from a silicon-based seeding area of the substrate. A semiconductor material is deposited on a Silicon-based seeding area and in the growth region. A single crystalline material is formed from the deposited semiconductor material by heating and cooling the deposited semiconductor material while directing growth of the semiconductor material from the Silicon-based seeding area and through an opening sufficiently narrow to mitigate crystalline defects. A light-communicating device is formed by etching the silicon material over an insulator layer and etching the single crystalline material.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: August 26, 2008
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Pawan Kapur, Yu-Hsuan Kuo, Michael West Wiemer, David A. B. Miller
  • Patent number: 7105799
    Abstract: An electronically tuned, wavelength-dependent optical detector is provided. The electronically tuned, wavelength-dependent optical detector is a modified metal-semiconductor-metal photodetector including a comb-like metal electrode at a common voltage and metal electrodes each supplied with a control voltage by a voltage means. The wavelength to be detected in an optical input illuminating the detector is selected based on the set of control voltages applied to the metal electrodes. In another embodiment of the invention, the wavelength to be detected with the electronically tuned, wavelength-dependent optical detector is also selected using a standing wave generator, such as an interferometer, to produce a spatially varying light intensity on the surface of the electronically tuned, wavelength-dependent optical detector. Electronic wavelength demultiplexing is also provided.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: September 12, 2006
    Assignee: The Board of Trustees of the Leland Stanford Junior Universtiy
    Inventors: Ray Chen, David A. B. Miller
  • Patent number: 7088884
    Abstract: An apparatus and method for spatially shifting a light using a multilayer thin-film stack of at least two materials having unequal optical properties, such as indices of refraction and absorption coefficients. The apparatus has an input face for admitting the light into the apparatus and an impedance matching mechanism for maximizing the in-coupling of the light into the multilayer thin-film stack at a non-normal incidence. The non-normal incidence is sufficient to generate a spatial shift of the light in the multilayer thin-film stack as a function of at least one light parameter, such as wavelength and/or polarization of the light, thereby separating the light into light components. The spatial shift is achieved by any one or any combination of effects including superprism, turning point and energy confinement. These effects are achieved in the multilayer thin-film stack by appropriately engineering its layer sequence.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: August 8, 2006
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Martina Gerken, David A. B. Miller
  • Patent number: 6827465
    Abstract: A display lighting system is provided that assembles and installs easily. Luminaires of the system include a pair of arms and a wireway enclosure positioned between the arms at one end of the arms. The enclosure is dimensioned to enclose electrical wiring and at least one electrical component, such as a ballast or transformer. A lamp housing can be attached to the arms at the end opposite the enclosure. An uplight lamp housing is easily mounted to the arms anywhere between the wireway enclosure and lamp housing. Wiring between the enclosure and lamp housings is carried inconspicuously in a trough along the inside of one or both arms. Wiring between adjacent luminaires runs conveniently through nipple connectors connecting adjacent enclosures. Optional accent lighting is also provided.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: December 7, 2004
    Assignee: Sylvan R. Shemitz Designs, Inc.
    Inventors: Sylvan R. Shemitz, Paul R. Ford, David B. Miller
  • Patent number: 6759687
    Abstract: A scheme (systems and methods) for passively aligning one or more optical devices with a corresponding number of optical lenses in an accurate and efficient manner is described. By this approach, the invention avoids the often labor-intensive and costly steps required by conventional active alignment techniques that attempt to align the optical devices to the optical fibers. In one aspect, an optoelectronic device includes an optical device system, an optical lens system and a plurality of solder bumps disposed therebetween. The optical device system includes an optical device substrate supporting one or more optical devices and a solderable metallization pattern having a spatial arrangement with respect to the one or more optical devices. The optical lens system includes one or more optical lenses and a device bonding surface supporting a solderable metallization pattern having a spatial arrangement with respect to the one or more optical lenses.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: July 6, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: David B. Miller, Hing-Wah Chan, Tanya J. Snyder
  • Patent number: 6680791
    Abstract: This invention relates to a semiconductor device and method for switching or modulating optical signals. The semiconductor device has a photodetector having a low electrical capacitance Cd, a detector absorbing layer for absorbing an optical signal beam, a modulator having a low capacitance Cm and a modulator absorbing layer exhibiting an electric field-dependent absorption coefficient. The modulator absorbing layer is used for absorbing an optical power beam, which is to be modulated or switched. The device has a low resistivity region between the photodetector and the modulator such that the electric field-dependent absorption coefficient is altered uniformly and rapidly throughout the modulator absorbing layer during absorption of the optical signal beam in the detector absorbing layer. The device is equipped with a high resistivity element in series with the low resistivity region for minimizing a net charge flow to and from the device.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: January 20, 2004
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Hilmi Volkan Demir, David A. B. Miller, Vijit Sabnis
  • Publication number: 20040008928
    Abstract: An apparatus and method for spatially shifting a light using a multilayer thin-film stack of at least two materials having unequal optical properties, such as indices of refraction and absorption coefficients. The apparatus has an input face for admitting the light into the apparatus and an impedance matching mechanism for maximizing the in-coupling of the light into the multilayer thin-film stack at a non-normal incidence. The non-normal incidence is sufficient to generate a spatial shift of the light in the multilayer thin-film stack as a function of at least one light parameter, such as wavelength and/or polarization of the light, thereby separating the light into light components. The spatial shift is achieved by any one or any combination of effects including superprism, turning point and energy confinement. These effects are achieved in the multilayer thin-film stack by appropriately engineering its layer sequence.
    Type: Application
    Filed: August 22, 2002
    Publication date: January 15, 2004
    Inventors: Martina Gerken, David A.B. Miller
  • Patent number: 6653706
    Abstract: A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.
    Type: Grant
    Filed: May 8, 2000
    Date of Patent: November 25, 2003
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: David A. B. Miller, James S. Harris, Jr.
  • Publication number: 20030210560
    Abstract: A display lighting system is provided that assembles and installs easily. Luminaires of the system include a pair of arms and a wireway enclosure positioned between the arms at one end of the arms. The enclosure is dimensioned to enclose electrical wiring and at least one electrical component, such as a ballast or transformer. A lamp housing can be attached to the arms at the end opposite the enclosure. An uplight lamp housing is easily mounted to the arms anywhere between the wireway enclosure and lamp housing. Wiring between the enclosure and lamp housings is carried inconspicuously in a trough along the inside of one or both arms. Wiring between adjacent luminaires runs conveniently through nipple connectors connecting adjacent enclosures. Optional accent lighting is also provided.
    Type: Application
    Filed: March 13, 2003
    Publication date: November 13, 2003
    Inventors: Sylvan R. Shemitz, Paul R. Ford, David B. Miller
  • Publication number: 20030197936
    Abstract: We describe a novel approach for tunable polarization mode dispersion (PMD) compensation using multi-layered thin-film dielectric reflectors. This design can compensate for both the first-order PMD and the second-order PMD in ultrahigh speed optical fiber communication systems. Built-in cavity layers constitute optical resonators localizing electromagnetic energy at a specific frequency in the cavity region and therefore generating dispersive reflection. The two principal states of polarization in this system, TE and TM modes, demonstrate different dispersion responses for oblique incidences, which can be readily tuned to offset the PMD accumulated in fiber links. Various schemes of dispersion generation could be designed using single-cavity cascading or with coupled multiple-cavity resonator structures.
    Type: Application
    Filed: April 18, 2002
    Publication date: October 23, 2003
    Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
    Inventors: Zhang Wang, David A.B. Miller, Shanhui Fan
  • Patent number: 6636462
    Abstract: A compact disk duplication system with a compact disk drive with an extendible disk tray for copying data onto a batch of compact disks, the disk duplication system having a disk transport unit with an XYZ transport mechanism, the transport unit having a deck, a frame and a housing, the transport mechanism including a carriage displaceable from side to side relative to the deck, an elevator device carried by the carriage having an elevator cage displaceable up and down relative to the deck, and a tram device having a cross beam on the elevator cage with a tram having a disk pickup mechanism displaceable fore and aft relative to the deck with the displacements of the carriage, elevator cage and tram being controlled for automatic operation by controlled drive mechanisms.
    Type: Grant
    Filed: May 14, 2001
    Date of Patent: October 21, 2003
    Inventors: Alexander V. Drynkin, David B. Miller, William M. Hess
  • Patent number: 6628695
    Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
    Type: Grant
    Filed: June 19, 2002
    Date of Patent: September 30, 2003
    Assignee: The board of trustees of the Leland Stanford Junior University
    Inventors: Rafael I. Aldaz, Gordon A. Keeler, Vijit A. Sabnis, James S. Harris, Jr., David A.B. Miller
  • Publication number: 20030169797
    Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
    Type: Application
    Filed: June 19, 2002
    Publication date: September 11, 2003
    Inventors: Rafael I. Aldaz, Gordon A. Keeler, Vijit A. Sabnis, James S. Harris, David A.B. Miller
  • Patent number: 6618150
    Abstract: A spectrometer for determining a spectrum of a light by using a mirror to reflect the light so that the light forms an intensity standing wave pattern through superposition of an incident portion of the light and a reflected portion of the light. The spectrometer is equipped with an intensity detector whose thickness is less than a shortest wavelength of the light being examined and which is semitransparent over the spectrum. The spectrometer has a mechanism to provide relative movement between the mirror and the intensity detector such that the intensity detector registers a variation of the intensity standing wave pattern. An analyzer, such as a Fourier transform analyzer, is employed to determine the spectrum of the light from that variation of the intensity standing wave pattern.
    Type: Grant
    Filed: August 16, 2001
    Date of Patent: September 9, 2003
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: James S. Harris, Jr., Helen L. Kung, David A. B. Miller
  • Patent number: 6591035
    Abstract: A novel method and device for separating light of differing wavelengths (wavelength demultiplexing) uses a very simple and compact multilayer dielectric structure having high angular dispersion at certain wavelengths and angles of incidence. The structure is composed of alternating layers of dielectric materials of different refractive indices, and is designed to operate just outside the main reflection region rather than within the main reflection region. In this region just outside the main reflection region there is strong group velocity dispersion, causing different wavelengths of light to travel at different angles through the dielectric stack. As a consequence, different wavelength components of a polychromatic beam are separated as they pass through the device.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: July 8, 2003
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: David A. B. Miller, Martina Gerken, Bianca E. Nelson
  • Publication number: 20030063362
    Abstract: This invention relates to a semiconductor device for switching or modulating optical signals, cross-connects and switches built of such devices as well as a method of switching or modulating optical signals. The semiconductor device has a photodetector having a low electrical capacitance Cd, a detector absorbing layer for absorbing an optical signal beam, a modulator having a low capacitance Cm and a modulator absorbing layer exhibiting an electric field-dependent absorption coefficient. The modulator absorbing layer is used for absorbing an optical power beam, which is to be modulated or switched. The device has a low resistivity region between the photodetector and the modulator such that the electric field-dependent absorption coefficient is altered uniformly and rapidly throughout the modulator absorbing layer during absorption of the optical signal beam in the detector absorbing layer.
    Type: Application
    Filed: February 13, 2002
    Publication date: April 3, 2003
    Inventors: Hilmi Volkan Demir, David A.B. Miller, Vijit Sabnis
  • Patent number: 6525815
    Abstract: A transform spectrometer determines the spectrum of light based on the Talbot effect. Light to be analyzed is passed through a spatially periodic object, thereby generating a series of Talbot images. The intensities of these Talbot images at different optical distances from the spatially periodic object are then detected, and Fourier transformed to determine the spectrum of the light. Preferably, the detector comprises a spatial masking pattern such that the intensities detected are maximized at Talbot planes or at the midpoints between Talbot planes. In one embodiment, the optical distance between the spatially periodic object and the detector is changed in order to detect image intensities at different Talbot planes. In another embodiment, the detector and the spatially periodic object are positioned along a common optical axis at relative angle &thgr; such that different detector rows detect intensities at different Talbot planes.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: February 25, 2003
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Helen L. Kung, David A. B. Miller