Abstract: A computer architecture and method for transferring data in the generating and displaying or printing of images having high edge placement accuracy derived from multiply exposures of a plurality of predefined patterns, each having inherently lower edge placement accuracy. The edge placement accuracy achieved can far exceed that normally afforded by the pixel size of the image transducer on which is formed the coarse pattern. The procedure starts with a pattern laid out on a grid finer than, or different from, the grid size defined by the pixel size of the image transducer, which is overlaid by the transducer grid and converted to n different patterns compatible with the transducer grid. When suitably combined by partial exposures that weight the patterns unevenly, the n patterns generate a viewable or recordable image with line edge positions that are a fraction (1/(2n−1)) of the transducer grid size.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a field oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its field oriented in the positive Z direction. Additionally, four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: A simple −1X, catadioptric projection relay system (e.g., a modified Wynne-Dyson relay) is combined with a linear scanning and object and image indexing systems to provide good imagery over a useful field which is two or more times wider than the field size of the projection system and arbitrarily long. The projection system has opposed and parallel object and image planes and produces an image in which object and image vectors in one direction are parallel and in a normal direction are opposed. The reticle and substrate are clamped and scanned together in the parallel direction and are indexed in the normal direction by equal and opposite amounts between scans. An example shows how a 2.5 micron resolution, i-line projection system with a 300 mm wide field could be used to expose a 550 mm wide substrate In two scans to yield a very high throughput.

Abstract: The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed.

Abstract: The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a filed oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its filed oriented in the positive Z direction. Additionally, up to four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: The respective square cross-section permanent magnets of each of a plurality of spaced Halbach magnet arrays, attached to the bottom of movable X-Y stage and aligned with a given one of the X and Y axes, are spaced from one another parallel to the other one of the X and Y axes of by the width of the square cross-section cooperates with both a first set of a plurality of flat stationary electromagnet coils of wire and a second set of a plurality of flat stationary electromagnet coils of wire that substantially lie in proximate horizontal X, Y planes and, respectively, are angularly offset by +45.degree. and -45.degree. with respect to the given one of the X and Y horizontal axes to provide a lateral translational force on the stage with respect to the horizontal X and/or Y axes and/or a levitating translational force on the stage with respect to the vertical Z axis.

Abstract: This invention includes a pin mirror arranged to receive light, preferably from a laser source. The pin mirror has a reflective surface that diffracts and reflects the received light to generate a diffraction-limited spherical wavefront. The pin mirror can reflect the wavefront in a predetermined direction by angling the pin mirror's reflective surface with respect to the direction of travel of the light incident to the pin mirror. The capability of the pin mirror to generate a diffraction-limited spherical wavefront and to direct the wavefront in a predetermined direction provides the capability to test objects or systems with relatively high numerical apertures, and yet allows for a reduction in the number and criticality of the properties of optical elements that would otherwise be required in an interferometer.

Abstract: A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes.

Abstract: A substrate alignment and exposure system is disclosed The alignment is performed by capturing an image of the substrate with a pattern recognition system, determining the offset from the alignment and moving the substrate relative to the reticle to be in alignment. A first optical alignment system which captures an image of a position of the substrate off of the primary axis of the exposure optics is used to perform pre-alignment. A second optical alignment system captures an image of the reticle and the substrate through the lens of the exposure optics. The pattern recognition system recognizes the alignment keys on the reticle, alignment targets on the substrate, and computes their positions and displacement from alignment. The relative alignment can be direct or inferred. Any angular and translational misalignment is calculated. The pattern recognition system then moves the substrate to be in alignment with the reticle.

Abstract: A system to transfer a pattern from a reticle to a substrate using a lens array having an arbitrarily wide image field that spans the width of the substrate. The disclosed system incorporates multiple, Wynne Dyson lenses arranged in serial pairs and staggered in position so that each dual serial Wynne Dyson lens system transfers a portion of the overall image from the reticle to the substrate as each are transported past the array of lens pairs. To transfer a complete, unbroken pattern on the substrate, each of the dual serial Wynne Dyson lens pairs are positioned in opposing and side-by-side positions and are staggered with respect to the scan direction. Each lens pair optionally includes individual internal adjustments, so that the pattern produced on the substrate does not contain any breaks or discontinuities.

Abstract: An optical system to project an image from an illuminated object to an image plane with a selected magnification factor. This system includes a lens system having a fixed magnification factor and at least one flat plate that is optically compatible with the lens system and which when bent into a cylindrical shape varies the fixed magnification factor of the lens system along one axis of the image. This variable magnification technique is applicable to all lens system types, including a Wynne Dyson type projection system. In addition, a Wynne Dyson optical projection system that includes an optical block in place of the usual fold prism is discussed. The optical block reduces changes in distortion caused by heat transferred from the reticle. The block permits the inclusion of a dichroic beamsplitter diagonally through the optical block which presents minimal attenuation of the exposure illumination.

Abstract: An alignment system for a unit magnification system (such as a Half-Field Dyson system) for use in microlithography is provided. The alignment system provides for aligning a pattern on a reticle with a complementary pattern on a wafer.

Abstract: Disclosed is tilt-sensing means that employs a point source of alternate 1st or 2nd divergent light beams which, after passing through collimating lenses of the Half-Field Dyson projection optics of the stepper, are separately incident on and reflected from a reflective pattern disposed on the surface of a reticle and from a reflective surface of a wafer, together with two-dimensional position detection means responsive to the position of each of the reflected alternate 1st or 2nd divergent light beams, for independently sensing the angular position of the surface of the reticle and the angular position of the surface of the wafer to determine thereby whether or not the surface of the reticle and the surface of the wafer are substantially parallel to one another.

Abstract: A microlithographic stepper, employing a Half-Field Dyson projection optical system, achieves focusing of an image of a first-layer reticle pattern on a completely unpatterned reflective wafer surface by including a repetitive diffraction pattern on the reticle which has a configuration in which a particular ordinal diffraction order is normally missing. In response to being simultaneously illuminated with each of two incident monochromatic beams of light, diffraction orders generated by the repetitive diffraction pattern are imaged on the reflective wafer surface and then reflected back to and reimaged on the repetitive diffraction pattern on the reticle. Diffraction orders generated on the first encounter with the repetitive diffraction pattern generate light in the originally missing ordinal diffraction order on the second encounter.

Abstract: An optical reticle inspection system and method employing a photolithographic projection optical system. The present invention provides for imaging a reticle pattern to be inspected onto a complementary reticle pattern and directly viewing the obscured image pattern to provide a measure of the fidelity of the reticle patterns.

Abstract: An optical projection system has been provided which is particularly suited for use in microlithography and includes a source of exposure energy for generating a beam of energy. A primary lens and mirror are located in the path of the beam for receiving the beam and passing only a portion of the beam therethrough. A refractive lens group is located in the path of the portion of the beam for receiving and transmitting that portion. A recticle element is located in the path of the portion of the beam and has a uniform thickness having a pattern on one surface thereof and an unpatterned portion adjacent thereto. The reticle element is positioned for permitting the portion of the beam to pass through its thickness and for reflecting the portion of the beam back through its thickness and the refractive lens group to the primary lens and mirror.

Abstract: A projection system provides a primary mirror with a thin nearly concentric shell which functions as a first mirror at shorter wavelengths for exposure purposes and functions as a second mirror surface at longer wavelengths for alignment purposes. The coating on the front surface of the shell is reflective to the exposing wavelengths and transmissive to the alignment illumination, and the coating on the back of the shell is reflective to the alignment wavelengths. This provides good focus and alignment of the images over two spectral regions.

Abstract: An optical projection system has been provided which is particularly suited for use in microlithography and includes a source of exposure energy for generating a beam of energy. A primary lens and mirror are located in the path of the beam for receiving the beam and passing only a portion of the beam therethrough. A refractive lens group is located in the path of the portion of the beam for receiving and transmitting that portion. A reticle element is located in the path of the portion of the beam and has a uniform thickness having a pattern on one surface thereof and an unpatterned portion adjacent thereto. The reticle element is positioned for permitting the portion of the beam to pass through its thickness and for reflecting the portion of the beam back through its thickness and the refractive lens group to the primary lens and mirror.