Abstract: Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

Abstract: A signal driver system can include one or more force amplifiers configured to provide drive signals to an output node, such as a device under test (DUT) node. The system can include a first switch circuit coupled between a first force amplifier and the output node, and the first switch circuit can include multiple parallel instances of switch circuits with respective different resistance characteristics. The system can include a second switch circuit coupled between a second force amplifier and the output node. The system can include a control circuit configured to control the switch circuit instances of the first switch circuit to mitigate glitch at the output node, for example, when switching between the first and second drive signals.

Abstract: Impedance paths for integrated circuits having microelectromechanical systems (MEMS) switches that allow for electrical charge to bleed from circuit nodes to fixed electric potentials (e.g., ground) are described. Such paths are referred to herein as charge bleed circuits. The circuit nodes may be circuit locations where electrical charge may accumulate because there is no other path for the electrical charge to dissipate. In some embodiments, a charge bleed circuit includes a switchable device (e.g., a MEMS switch, a solid-state device switch, or a circuit including various solid-state device switches that, collectively, implement a device that can be switched on and off) that connects and disconnects the impedance path from a circuit node. This may allow the device to perform different types of measurements at desired performance levels.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: A solid state switch, comprising a first metal-oxide-semiconductor field-effect transistor (MOSFET). The first MOSFET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second MOSFET in series with the first MOSFET. The second MOSFET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first MOSFET is connected to the second terminal of the second MOSFET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first MOSFET, and an input terminal coupled to the first terminal of the first MOSFET.

Abstract: A solid state switch, comprising a first field-effect transistor (FET). The first FET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second FET in series with the first FET. The second FET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first FET is connected to the second terminal of the second FET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first FET, and an input terminal coupled to the first terminal of the first FET.

Abstract: A solid state switch, comprising a first field-effect transistor (FET). The first FET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second FET in series with the first FET. The second FET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first FET is connected to the second terminal of the second FET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first FET, and an input terminal coupled to the first terminal of the first FET.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: A new field-effect transistor (FET) based switch for use in/with high voltage precision instruments is provided. The switch can enable leakage compensation. A switch comprises a first FET in series with a second FET, and a buffer with an output terminal and an input terminal. The drain terminal of the first FET is connected to the source terminal of the second FET. The input terminal is coupled to the drain terminal of the second FET. At least one of: the first FET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the first FET; and, the second SFET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the second FET.

Abstract: Circuit breakers based on micro-electromechanical systems (MEMS) switches are described. A high voltage MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control voltage applied on one of the control electrodes with respect to a first reference voltage puts one of the two ends of the beam in electric contact with one of two contact electrodes of the MEMS teeter-totter switch to electrical connected two terminals of a circuit breaker. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage. A MEMS teeter-totter switch network comprises a plurality of MEMS teeter-totter switches configured to switch high voltage and high current between the two terminals of the circuit breaker.

Abstract: Circuit breakers comprising high voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch connected between two terminals of the circuit breaker can include a beam coupled to an anchor on a substrate and two control electrodes disposed on a surface of the substrate. The circuit breaker includes one or more sensors that generate sensor signals indicative of operational conditions of the MEMS teeter-totter switch. A microcontroller generates control signals to change the state of the switch based at least in part on one of the sensor signals.

Abstract: High voltage microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The switch can include control electrodes, disposed on a surface of the substrate, for electrically controlling the beam. The anchor is asymmetrically positioned with respect to the two ends of the beam and is electrically connected to a middle electrode. A stopper serves as a pivot point during actuation of the switch to reduce the mechanical stress on the hinges.

Abstract: High voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control circuit may include an isolator that provides an isolated activation voltage to a voltage supply and control circuit. The voltage supply and control circuit uses the isolated activation voltage to supply a control voltage to one of the control electrodes with respect to a first reference voltage, causing the beam to provide an input voltage received from an input terminal to a contact electrode of the MEMS teeter-totter switch electrically connected to an output terminal. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage.

Abstract: High voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch connected between two terminals of a circuit breaker can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A protective switch connected between the two terminals in parallel with the MEMS teeter-totter switch may turn on during transition of the MEMS teeter-totter switch between ON and OFF states to protect the MEMS teeter-totter switch from large currents and voltages that may flow or develop across the MEMS teeter-totter switch when the voltage between two terminals is large.

Abstract: High voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch connected between two terminals of a circuit breaker can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. An electrical overstress device connected between the two terminals in parallel with the MEMS teeter-totter switch may protect the MEMS teeter-totter switch when a high voltage transient signal is applied across the teeter-totter switch.

Abstract: High voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control circuit may include an optical isolator that provides an isolated activation voltage to a voltage supply and control circuit. The voltage supply and control circuit uses the isolated activation voltage to supply a control voltage to one of the control electrodes with respect to a first reference voltage, causing the beam to provide an input voltage received from an input terminal to a contact electrode of the MEMS teeter-totter switch electrically connected to an output terminal. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage.

Abstract: Aspects of the disclosure relate to an electronic device package. The electronic device package can include a laminate substrate. The electronic device package can include connection pads disposed on the laminate substrate and along a perimeter of the electronic device package. Connection pads that are along a first side of the laminate substrate can have a first orientation that is different than a second orientation of connection pads that are along a second side of the laminate substrate. The first side can be adjacent to the second side. Each of connection pads can have a minimum size for Kelvin sensing in a process technology for manufacturing the electronic device package. The electronic device package can include a die enclosed within a packaging structure.

Abstract: A new MOS based switch for use in/with high voltage precision instruments is provided. The switch can enable leakage compensation. The switch can comprise a MOS device and a compensation circuit coupled to the MOS device to replicate and compensate for the MOS device leakage, such that the switch appears not to leak current. The compensation circuit may comprise a sense device which acts as a scaled replica of the MOS device being compensated. The sense device's leakage current can then be measured, reproduced at the scale factor, and injected back to the drain terminal of the MOS device.

Abstract: A solid state switch, comprising a first metal-oxide-semiconductor field-effect transistor (MOSFET) comprising: a drain terminal, a source terminal, and a gate terminal. The MOSFET is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second MOSFET in series with the first MOSFET and a buffer with an output terminal and an input terminal. The second MOSFET has a gate terminal, a drain terminal, and a source terminal. The drain terminal of the first MOSFET is connected to the source terminal of the second MOSFET. The input terminal is coupled to the drain terminal of the second MOSFET. At least one of: the first MOSFET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the first MOSFET; and, the second MOSFET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the second MOSFET.