Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: The disclosed technology relates generally to switching devices and more particularly to switching devices employing micro-electromechanical system (MEMS) switches. The switching devices can serve as circuit breakers for protecting electrical systems against certain electrical events. The switching devices can be configured to monitor and control one or both the MEMS switches and the electrical systems being protected. The disclosed technology additionally relates to systems including the switching devices and methods of using the switching devices.

Abstract: A method and circuit arrangement for voltage protection is disclosed. In certain embodiments, a controllable switch comprises a control terminal, a first channel terminal, and a second channel terminal, and arranged to be switched between an off-state and an on-state. In the on-state the controllable switch allows a current to flow between the first channel terminal and the second channel terminal. An overvoltage protection circuit is configured to determine a voltage difference between a first voltage of the first channel terminal and a second voltage of the second channel terminal. The overvoltage protection circuit also sets a control signal to a protection value to operate the controllable switch in the off-state in response to determining that the voltage difference is greater than or equal to a switch threshold.

Abstract: A method and circuit arrangement for a solid state switch device is disclosed. In certain embodiment, a solid state switch device comprising a controllable switch comprising a control terminal, a first channel terminal, and a second channel terminal, and arranged to be switched between an off-state and an on-state, wherein in the on-state the switch allows a current to flow between the first channel terminal and the second channel terminal. The solid state switch device further comprising: a first compensation circuit configured to: generate a first boost current based on a voltage difference between the first channel terminal and the second channel terminal; and apply the first boost current to the control terminal to charge a switch capacitance of the controllable switch.

Abstract: Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

Abstract: A signal driver system can include one or more force amplifiers configured to provide drive signals to an output node, such as a device under test (DUT) node. The system can include a first switch circuit coupled between a first force amplifier and the output node, and the first switch circuit can include multiple parallel instances of switch circuits with respective different resistance characteristics. The system can include a second switch circuit coupled between a second force amplifier and the output node. The system can include a control circuit configured to control the switch circuit instances of the first switch circuit to mitigate glitch at the output node, for example, when switching between the first and second drive signals.

Abstract: Impedance paths for integrated circuits having microelectromechanical systems (MEMS) switches that allow for electrical charge to bleed from circuit nodes to fixed electric potentials (e.g., ground) are described. Such paths are referred to herein as charge bleed circuits. The circuit nodes may be circuit locations where electrical charge may accumulate because there is no other path for the electrical charge to dissipate. In some embodiments, a charge bleed circuit includes a switchable device (e.g., a MEMS switch, a solid-state device switch, or a circuit including various solid-state device switches that, collectively, implement a device that can be switched on and off) that connects and disconnects the impedance path from a circuit node. This may allow the device to perform different types of measurements at desired performance levels.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: A solid state switch, comprising a first metal-oxide-semiconductor field-effect transistor (MOSFET). The first MOSFET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second MOSFET in series with the first MOSFET. The second MOSFET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first MOSFET is connected to the second terminal of the second MOSFET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first MOSFET, and an input terminal coupled to the first terminal of the first MOSFET.

Abstract: A solid state switch, comprising a first field-effect transistor (FET). The first FET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second FET in series with the first FET. The second FET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first FET is connected to the second terminal of the second FET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first FET, and an input terminal coupled to the first terminal of the first FET.

Abstract: A solid state switch, comprising a first field-effect transistor (FET). The first FET has a first terminal, a second terminal, a bulk terminal and a gate terminal, and is configured to be switched between an on-state and an off-state. The solid state switch also comprises a second FET in series with the first FET. The second FET has a first terminal, a second terminal, a bulk terminal, and a gate terminal. The second terminal of the first FET is connected to the second terminal of the second FET. The solid state switch comprises a first buffer comprises an output terminal coupled to the bulk terminal of the first FET, and an input terminal coupled to the first terminal of the first FET.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: A new field-effect transistor (FET) based switch for use in/with high voltage precision instruments is provided. The switch can enable leakage compensation. A switch comprises a first FET in series with a second FET, and a buffer with an output terminal and an input terminal. The drain terminal of the first FET is connected to the source terminal of the second FET. The input terminal is coupled to the drain terminal of the second FET. At least one of: the first FET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the first FET; and, the second SFET has an isolation terminal and the output terminal of the buffer is coupled to the isolation terminal of the second FET.

Abstract: Circuit breakers based on micro-electromechanical systems (MEMS) switches are described. A high voltage MEMS teeter-totter switch can include a beam coupled to an anchor on a substrate and two control electrodes, disposed on a surface of the substrate. A control voltage applied on one of the control electrodes with respect to a first reference voltage puts one of the two ends of the beam in electric contact with one of two contact electrodes of the MEMS teeter-totter switch to electrical connected two terminals of a circuit breaker. The input voltage is applied on the beam with respect to a second reference voltage different from the first reference voltage. A MEMS teeter-totter switch network comprises a plurality of MEMS teeter-totter switches configured to switch high voltage and high current between the two terminals of the circuit breaker.

Abstract: Circuit breakers comprising high voltage micro-electromechanical systems (MEMS) switches are described. A MEMS teeter-totter switch connected between two terminals of the circuit breaker can include a beam coupled to an anchor on a substrate and two control electrodes disposed on a surface of the substrate. The circuit breaker includes one or more sensors that generate sensor signals indicative of operational conditions of the MEMS teeter-totter switch. A microcontroller generates control signals to change the state of the switch based at least in part on one of the sensor signals.