Abstract: Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

Abstract: A signal driver system can include one or more force amplifiers configured to provide drive signals to an output node, such as a device under test (DUT) node. The system can include a first switch circuit coupled between a first force amplifier and the output node, and the first switch circuit can include multiple parallel instances of switch circuits with respective different resistance characteristics. The system can include a second switch circuit coupled between a second force amplifier and the output node. The system can include a control circuit configured to control the switch circuit instances of the first switch circuit to mitigate glitch at the output node, for example, when switching between the first and second drive signals.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: Circuits and methods for protecting against over-current conditions of switches are described. Over-current conditions can damage switches and the circuits they connect. Some embodiments of the present application provide a sense switch in parallel with the load switch. The sense switch is smaller than the load switch, and is used to sense an over-current condition of the load switch. The sense switch can remain on even when the load switch is turned off in response to detection of an over-current condition.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: Circuits and methods for protecting against over-current conditions of switches are described. Over-current conditions can damage switches and the circuits they connect. Some embodiments of the present application provide a sense switch in parallel with the load switch. The sense switch is smaller than the load switch, and is used to sense an over-current condition of the load switch. The sense switch can remain on even when the load switch is turned off in response to detection of an over-current condition.

Abstract: A package with a laminate substrate is disclosed. The laminate substrate includes a first layer with a first terminal and a second terminal. The laminate substrate also includes a second layer with a conductive element. The laminate substrate further includes a first via and a second via that electrically connect the first terminal to the conductive element and the second terminal to the conductive element, respectively. The package can include a die mounted on and electrically connected to the laminate substrate.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The present disclosure provides a method and device for overvoltage protection. Specifically, the present disclosure provides an overvoltage protection device which provides a feedback loop for electronic components such as amplifiers and digital to analog converters which require feedback. The overvoltage protection device also includes overvoltage switches in both the signal and feedback channels, which may be opened by a fault detector in the event of an overvoltage. The device also includes an overvoltage feedback channel coupled between the signal and feedback channels, and which also includes a switch which may be closed in the event of an overvoltage event. As such, the overvoltage device provides a closed loop feedback channel during an overvoltage event.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: There is provided an analog signal gauge that monitors an analog signal at a node and a non-volatile memory element to store an event that occurs at the node when a certain criteria, such as exceeding a maximum safe threshold, is satisfied. This way, the analog signal gauge can help to provide an accurate picture of the operating characteristics in the analog circuit which it is monitoring, including indications of faults that occur in the analog system.