Abstract: The present disclosure provides a method and device for overvoltage protection. Specifically, the present disclosure provides an overvoltage protection device which provides a feedback loop for electronic components such as amplifiers and digital to analog converters which require feedback. The overvoltage protection device also includes overvoltage switches in both the signal and feedback channels, which may be opened by a fault detector in the event of an overvoltage. The device also includes an overvoltage feedback channel coupled between the signal and feedback channels, and which also includes a switch which may be closed in the event of an overvoltage event. As such, the overvoltage device provides a closed loop feedback channel during an overvoltage event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: There is provided an analog signal gauge that monitors an analog signal at a node and a non-volatile memory element to store an event that occurs at the node when a certain criteria, such as exceeding a maximum safe threshold, is satisfied. This way, the analog signal gauge can help to provide an accurate picture of the operating characteristics in the analog circuit which it is monitoring, including indications of faults that occur in the analog system.

Abstract: A package with a laminate substrate is disclosed. The laminate substrate includes a first layer with a first terminal and a second terminal. The laminate substrate also includes a second layer with a conductive element. The laminate substrate further includes a first via and a second via that electrically connect the first terminal to the conductive element and the second terminal to the conductive element, respectively. The package can include a die mounted on and electrically connected to the laminate substrate.

Abstract: SPI Round Robin Mode for Single-Cycle MUX Channel Sequencing. SPI round robin mode is an SPI mode applicable for MUX devices control. It allows the MUX output to connect to the next input channel sequentially in just one clock cycle. Configurations can be made such as: clock edge to use (rising/falling), ascending/descending channel sequence, and enabling/disabling the channels to go through. The device supersedes an ADC with built in sequencing and is applicable to multiplexing, switching, instrumentation, process control and isolation application—while retaining SPI device control and operation.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: SPI frame for simultaneously entering 8 bit daisy-chain mode from 16 bit register addressable mode. Some products that implement SPI may be connected in a daisy chain configuration, the first slave output being connected to the second slave input, etc. The SPI port of each slave is designed to send out during the second group of clock pulses an exact copy of the data it received during the first group of clock pulses. The whole chain acts as a communication shift register; daisy chaining is often done with shift registers to provide a bank of inputs or outputs through SPI. Large latency occurs during the entry into daisy-chain mode which increases as a function of the number of linked SPI devices. A means for simultaneously instructing all connected devices to enter/enable daisy-chain mode is disclosed.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: SPI Round Robin Mode for Single-Cycle MUX Channel Sequencing. SPI round robin mode is an SPI mode applicable for MUX devices control. It allows the MUX output to connect to the next input channel sequentially in just one clock cycle. Configurations can be made such as: clock edge to use (rising/falling), ascending/descending channel sequence, and enabling/disabling the channels to go through. The device supersedes an ADC with built in sequencing and is applicable to multiplexing, switching, instrumentation, process control and isolation application—while retaining SPI device control and operation.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring. An integrated circuit device includes a core circuit and a wear-out monitor device. The wear-out monitor device configured to adjust an indication of wear out of the core circuit regardless of whether the core circuit is activated The integrated circuit further includes a sensing circuit coupled to the wear-out monitor device and configured to detect an electrical property of the wear-out monitor device that is indicative of a wear-out level of the core-circuit.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.

Abstract: SPI frame for simultaneously entering 8 bit daisy-chain mode from 16 bit register addressable mode. Some products that implement SPI may be connected in a daisy chain configuration, the first slave output being connected to the second slave input, etc. The SPI port of each slave is designed to send out during the second group of clock pulses an exact copy of the data it received during the first group of clock pulses. The whole chain acts as a communication shift register; daisy chaining is often done with shift registers to provide a bank of inputs or outputs through SPI. Large latency occurs during the entry into daisy-chain mode which increases as a function of the number of linked SPI devices. A means for simultaneously instructing all connected devices to enter/enable daisy-chain mode is disclosed.

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring. An integrated circuit device includes a core circuit and a wear-out monitor device. The wear-out monitor device configured to adjust an indication of wear out of the core circuit regardless of whether the core circuit is activated The integrated circuit further includes a sensing circuit coupled to the wear-out monitor device and configured to detect an electrical property of the wear-out monitor device that is indicative of a wear-out level of the core-circuit.