Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring. An integrated circuit device includes a core circuit and a wear-out monitor device. The wear-out monitor device configured to adjust an indication of wear out of the core circuit regardless of whether the core circuit is activated The integrated circuit further includes a sensing circuit coupled to the wear-out monitor device and configured to detect an electrical property of the wear-out monitor device that is indicative of a wear-out level of the core-circuit.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.

Abstract: SPI frame for simultaneously entering 8 bit daisy-chain mode from 16 bit register addressable mode. Some products that implement SPI may be connected in a daisy chain configuration, the first slave output being connected to the second slave input, etc. The SPI port of each slave is designed to send out during the second group of clock pulses an exact copy of the data it received during the first group of clock pulses. The whole chain acts as a communication shift register; daisy chaining is often done with shift registers to provide a bank of inputs or outputs through SPI. Large latency occurs during the entry into daisy-chain mode which increases as a function of the number of linked SPI devices. A means for simultaneously instructing all connected devices to enter/enable daisy-chain mode is disclosed.

Abstract: A charge injection compensation circuit compensates for charge injection by a field-effect transistor (FET) switch regardless of a supply voltage. The charge injection compensation circuit includes a main switch that injects charge into an electronic circuit when switched off, and a charge storage device that stores the injected charge until it can be dissipated to a dissipating node. Upon the main switch being controlled to switch off, a pulse generator circuit controls a charge storage switch to switch on to transfer the charge injected from the main switch to the charge storage device and then switch off. A dissipation circuit dissipates the charge from the charge storage device to a dissipating node.

Abstract: A dry powder inhalation device is disclosed. In one optional aspect, the device includes a housing, a base plate, a receptacle for a medicament and a mouthpiece. The base plate is engageable with the housing to form a main space with a main air inlet. The mouthpiece includes an inner conduit connected to its outlet and is engageable with the base plate to fluidly connect the inner conduit to the receptacle. The receptacle is fluidly connected to the main space, so that upon inhalation by a user, air can be drawn through the main air inlet into the main space and onward through the receptacle into the inner conduit. The mouthpiece and the base plate form an auxiliary space with an auxiliary air inlet, wherein the auxiliary space is fluidly connected to the main space.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring. An integrated circuit device includes a core circuit and a wear-out monitor device. The wear-out monitor device configured to adjust an indication of wear out of the core circuit regardless of whether the core circuit is activated The integrated circuit further includes a sensing circuit coupled to the wear-out monitor device and configured to detect an electrical property of the wear-out monitor device that is indicative of a wear-out level of the core-circuit.

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Abstract: An analog switch may be maintained reliably in an off state. The switch comprises: a P-type first transistor having a source, a drain and a gate, a N-type second transistor having a source, a drain and a gate, and a switch control circuit to drive the gates of the first and second transistors. The drain of the first transistor and the source of the second transistor are connected at a first node, and the source of the first transistor and the drain of the second transistor are connected at a second node. When the voltage at the first or second nodes falls outside of a supply voltage range of the switch control circuit, the switch control circuit is operable, in response to a signal to make the switch high impedance, by adjusting the gate voltages of the first transistor and the second transistor.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: A circuit and a system that uses the circuit for connecting a plurality of input channels to a receiving device. The circuit includes a plurality of DMOS switches, each of which connects a respective one of the input channels to the receiving device in response to a respective control signal. The control signals are referenced to a ground signal. Each input channel includes a common mode voltage that is non-referenced to the ground signal. The circuit also includes a switch driver that generates the control signals such that the input channels are activated one at a time.

Abstract: The present disclosure is directed to methods and systems for user registration, where a user is logged in to a first device in communication with a server, including: receiving an anonymous registration of a second device comprising a token, where the second device is in communication with the server; receiving a credential of the user and the token; finding the second device using the token; and registering the user on the second device using the credential.

Abstract: A method and corresponding circuits for operating a parallel DMOS switch that includes a pair of P-type DMOS devices connected in series with each other and in parallel with a pair of N-type DMOS devices connected in series with each other. The method and circuits involve turning the switch on by applying gate signals to the DMOS device pairs which are generated using at least one source voltage of a DMOS device pair. The switch is turned off by setting the gate signals equal to the respective source voltages of the DMOS device pairs.

Abstract: The present disclosure is directed to methods and systems for user registration, where a user is logged in to a first device in communication with a server, including: receiving an anonymous registration of a second device comprising a token, where the second device is in communication with the server; receiving a credential of the user and the token; finding the second device using the token; and registering the user on the second device using the credential.

Abstract: A bi-directional switch circuit includes a pair of N-type MOS devices connected in series with a common source terminal, and a pair of P-type MOS devices connected in series with a common source terminal. The series connected N-type devices are connected in parallel with the series connected P-type devices in a configuration that includes a first input/output (I/O) point of the switch circuit being connected to a drain of a first one of the N-type devices and a drain of a first one of the P-type devices. The parallel configuration also includes a second I/O point of the switch circuit being connected to a drain of a second one of the N-type devices and a drain of a second one of the P-type devices.