Abstract: A device for machining a surface of a workpiece includes a workpiece holder configured to rotate the workpiece about a workpiece rotational axis, a tool having a tool rotational axis and at least one blade having a blade radius of curvature and a tool holder configured to position the tool such that an active point of the blade comes into engagement with the workpiece and configured to pivot the tool about the tool rotational axis and to configured to move the tool with an advancing motion such that the active point of the blade shifts along the blade. The advancing motion is defined by a curve having at least a first radius of curvature and a second radius of curvature.

Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.

Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.

Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract: Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer through the patterned material to form a uniform roughness.

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process.

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.