Patents by Inventor David C. Thomas

David C. Thomas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180319520
    Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.
    Type: Application
    Filed: July 9, 2018
    Publication date: November 8, 2018
    Inventors: Jeffrey D. Termanas, David C. Thomas, Janusz Ciurkot
  • Patent number: 10099808
    Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: October 16, 2018
    Assignee: SIGNODE INDUSTRIAL GROUP LLC
    Inventors: Jeffrey D. Termanas, David C. Thomas, Janusz Ciurkot
  • Patent number: 9825120
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: November 21, 2017
    Assignee: International Business Machines Corporation
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Patent number: 9825119
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: November 21, 2017
    Assignee: International Business Machines Corporation
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Patent number: 9607929
    Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: March 28, 2017
    Assignee: International Business Machines Corporation
    Inventors: James W. Adkisson, Yoba Amoah, Jeffrey P. Gambino, Christine A. Leggett, Max L. Lifson, Charles F. Musante, Sruthi Samala, David C. Thomas
  • Patent number: 9548349
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: January 17, 2017
    Assignee: International Business Machines Corporation
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Publication number: 20160343798
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Application
    Filed: August 2, 2016
    Publication date: November 24, 2016
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Publication number: 20160343797
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Application
    Filed: August 2, 2016
    Publication date: November 24, 2016
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Patent number: 9484301
    Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: November 1, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Max G. Levy, Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Steven S. Williams
  • Publication number: 20160152363
    Abstract: A device forms and applies an edge protector to a corner of a load as strap is positioned and tensioned around the load, to position the edge protector between the strap and the load. The device includes a shuttle movable between a home position away from the load and an application position near the load. The shuttle includes a breaker assembly having a fixed portion and a movable portion. The movable portion is movable between a position in which it is generally planar with the fixed portion and another position in which it is transverse to the fixed portion. The breaker assembly includes a shoe that defines a receiving region between the shoe and the fixed and movable portions. The shuttle includes a load contact portion. Movement of the shuttle from the home position moves the movable portion from the first to the second position to fold the edge protector.
    Type: Application
    Filed: September 24, 2015
    Publication date: June 2, 2016
    Inventors: Jeffrey D. Termanas, David C. Thomas, Janusz Ciurkot
  • Patent number: 9312205
    Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: April 12, 2016
    Assignee: International Business Machines Corporation
    Inventors: James W. Adkisson, Yoba Amoah, Jeffrey P. Gambino, Christine A. Leggett, Max L. Lifson, Charles F. Musante, Sruthi Samala, David C. Thomas
  • Patent number: 9275868
    Abstract: Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer through the patterned material to form a uniform roughness.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: March 1, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Shawn A. Adderly, Jeffrey P. Gambino, Max L. Lifson, Matthew D. Moon, William J. Murphy, Timothy D. Sullivan, David C. Thomas
  • Publication number: 20150380478
    Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
    Type: Application
    Filed: June 25, 2014
    Publication date: December 31, 2015
    Inventors: Max G. Levy, Gary L. Milo, David C. Thomas
  • Publication number: 20150348876
    Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
    Type: Application
    Filed: August 13, 2015
    Publication date: December 3, 2015
    Inventors: James W. Adkisson, Yoba Amoah, Jeffrey P. Gambino, Christine A. Leggett, Max L. Lifson, Charles F. Musante, Sruthi Samala, David C. Thomas
  • Publication number: 20150255395
    Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.
    Type: Application
    Filed: May 21, 2015
    Publication date: September 10, 2015
    Inventors: Max G. Levy, Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Steven S. Williams
  • Publication number: 20150255404
    Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
    Type: Application
    Filed: March 4, 2014
    Publication date: September 10, 2015
    Applicant: International Business Machines Corporation
    Inventors: James W. Adkisson, Yoba Amoah, Jeffrey P. Gambino, Christine A. Leggett, Max L. Lifson, Charles F. Musante, Sruthi Samala, David C. Thomas
  • Patent number: 9087839
    Abstract: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: July 21, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shawn A. Adderly, Daniel A. Delibac, Zhong-Xiang He, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Eric J. White
  • Patent number: 9059258
    Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: June 16, 2015
    Assignee: International Business Machines Corporation
    Inventors: Max G. Levy, Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas, Steven S. Williams
  • Patent number: 9006703
    Abstract: Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: April 14, 2015
    Assignee: International Business Machines Corporation
    Inventors: Shawn A. Adderly, Brian M. Czabaj, Daniel A. Delibac, Jeffrey P. Gambino, Matthew D. Moon, David C. Thomas
  • Publication number: 20150035117
    Abstract: Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer.
    Type: Application
    Filed: July 31, 2013
    Publication date: February 5, 2015
    Applicant: International Business Machines Corporation
    Inventors: Shawn A. Adderly, Brian M. Czabaj, Daniel A. Delibac, Jeffrey P. Gambino, Matthew D. Moon, David C. Thomas