Abstract: An ultra-low capacitance ESD protection device with an ultra-fast response time and a low turn-on voltage, and a high holding current. The device may include: a heavily-doped p-type substrate; a lightly-doped n-type epitaxial layer with a heavily-doped n-type buried layer; and a semiconductor-controlled rectifier (SCR) structure within the epitaxial layer. The SCR structure includes, between a ground terminal and a pad terminal: a shallow P+ region within a moderately-doped n-type well to form an emitter-base junction of a trigger transistor; a shallow N+ region within a moderately-doped p-type well to form an emitter-base junction of a latching transistor, and a PN junction coupled to either of the shallow regions as a forward-biased series diode. To reduce capacitance, the n-type and p-type wells are separated by a lightly-doped portion of the epitaxial layer having a small lateral dimension for enhanced switching speed.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.

Abstract: An ultra-low capacitance ESD protection device with an ultra-fast response time and a low turn-on voltage, and a high holding current. The device may include: a heavily-doped p-type substrate; a lightly-doped n-type epitaxial layer with a heavily-doped n-type buried layer; and a semiconductor-controlled rectifier (SCR) structure within the epitaxial layer. The SCR structure includes, between a ground terminal and a pad terminal: a shallow P+ region within a moderately-doped n-type well to form an emitter-base junction of a trigger transistor; a shallow N+ region within a moderately-doped p-type well to form an emitter-base junction of a latching transistor, and a PN junction coupled to either of the shallow regions as a forward-biased series diode. To reduce capacitance, the n-type and p-type wells are separated by a lightly-doped portion of the epitaxial layer having a small lateral dimension for enhanced switching speed.

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.

Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.

Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.

Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.

Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.

Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.

Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.