Patents by Inventor David D. Marreiro

David D. Marreiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE
    Publication number: 20120080803
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Inventors: Phillip Holland, Rong Liu, Umesh Sharma, Der Min Liou, David D. Marreiro, Sudhama C. Shastri
  • Semiconductor Component and Method
    Publication number: 20120074846
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits.
    Type: Application
    Filed: September 27, 2010
    Publication date: March 29, 2012
    Inventors: David D. Marreiro, Sudhama C. Shastri, Stefan Gueorguiev
  • Method of forming a high capacitance diode and structure therefor
    Patent number: 8143701
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: March 27, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
  • INTEGRATED SEMICONDUCTOR DEVICE
    Publication number: 20110198728
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 18, 2011
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • Method of forming an integrated semiconductor device and structure therefor
    Patent number: 7955941
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • LOW CLAMP VOLTAGE ESD METHOD
    Publication number: 20110021009
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Application
    Filed: September 27, 2010
    Publication date: January 27, 2011
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, JR.
  • Low clamp voltage ESD device and method therefor
    Patent number: 7842969
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, Jr.
  • METHOD OF FORMING A HIGH CAPACITANCE DIODE AND STRUCTURE THEREFOR
    Publication number: 20100072573
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Application
    Filed: December 3, 2009
    Publication date: March 25, 2010
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
  • METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
    Publication number: 20100060349
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 11, 2010
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • Method of forming a high capacitance diode and structure therefor
    Patent number: 7666751
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: February 23, 2010
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
  • LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR
    Publication number: 20100006889
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Application
    Filed: July 10, 2008
    Publication date: January 14, 2010
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, JR.
  • METHOD OF FORMING A HIGH CAPACITANCE DIODE AND STRUCTURE THEREFOR
    Publication number: 20090079032
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs