Abstract: A reference voltage value and a chip select (CS) signal timing delay provided to memory devices can be determined based on samples of the CS signal received by the memory devices. The CS signal can be provided to the memory devices with varying time delays and for various reference voltages. Various samples of the CS signal from the memory devices can indicate different times for rising and falling edges of the CS signal. A composite signal eye can be generated by the latest occurring rising edge and the earliest occurring falling edge of the CS signal. The reference voltage value and timing delay can be chosen based on the composite signal eye width that is the closest to a reference eye width.

Abstract: A reference voltage value and a chip select (CS) signal timing delay provided to memory devices can be determined based on samples of the CS signal received by the memory devices. The CS signal can be provided to the memory devices with varying time delays and for various reference voltages. Various samples of the CS signal from the memory devices can indicate different times for rising and falling edges of the CS signal. A composite signal eye can be generated by the latest occurring rising edge and the earliest occurring falling edge of the CS signal. The reference voltage value and timing delay can be chosen based on the composite signal eye width that is the closest to a reference eye width.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.

Abstract: A sample voltage is received from a device at a first slicer element and a second slicer element. A decision by the first slicer element based on the sample voltage is identified and compared with a decision of the second slicer element based on the sample voltage. The decision of the second slicer element is to be generated from a comparison of the sample voltage with a reference voltage for the second slicer element. Comparing the decisions can be the basis of a soft error ratio determined for a device.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. Other aspects are described herein.

Abstract: A memory subsystem includes logic buffer coupled to a command bus between a memory controller and a memory device. The logic buffer detects that the memory controller places the command bus in a state where the memory controller does not drive the command bus with a valid executable memory device command. In response to detecting the state of the command bus, the logic buffer generates a signal pattern and injects the signal pattern on the command bus after a scheduler of the memory controller to drive the command bus with the signal pattern.

Abstract: A memory subsystem includes a test signal generator of a memory controller that generates a test data signal in response to the memory controller receiving a test transaction. The test transaction indicates one or more I/O operations to perform on an associated memory device. The test signal generator can generate data signals from various different pattern generators. The memory controller scheduler schedules the test data signal pattern, and sends it to the memory device. The memory device can then execute I/O operation(s) to implement the test transaction. The memory controller can read back data written to a specific address of the memory device and compare the read back data with expected data. When the read back data and the expected data do not match, the memory controller can record an error. The error can include the specific address of the error, the specific data, and/or encoded data.

Abstract: REUT (Robust Electrical Unified Testing) for memory links is introduced which speeds testing, tool development, and debug. In addition it provides training hooks that have enough performance to be used by BIOS to train parameters and conditions that have not been possible with past implementations. Address pattern generation circuitry is also disclosed.

Abstract: A sample voltage is received from a device at a first slicer element and a second slicer element. A decision by the first slicer element based on the sample voltage is identified and compared with a decision of the second slicer element based on the sample voltage. The decision of the second slicer element is to be generated from a comparison of the sample voltage with a reference voltage for the second slicer element. Comparing the decisions can be the basis of a soft error ration determined for a device.

Abstract: A memory subsystem includes a test signal generator of a memory controller that generates a test data signal in response to the memory controller receiving a test transaction. The test transaction indicates one or more I/O operations to perform on an associated memory device. The test signal generator can generate data signals from various different pattern generators. The memory controller scheduler schedules the test data signal pattern, and sends it to the memory device. The memory device can then execute I/O operation(s) to implement the test transaction. The memory controller can read back data written to a specific address of the memory device and compare the read back data with expected data. When the read back data and the expected data do not match, the memory controller can record an error. The error can include the specific address of the error, the specific data, and/or encoded data.

Abstract: A memory subsystem includes logic buffer coupled to a command bus between a memory controller and a memory device. The logic buffer detects that the memory controller places the command bus in a state where the memory controller does not drive the command bus with a valid executable memory device command. In response to detecting the state of the command bus, the logic buffer generates a signal pattern and injects the signal pattern on the command bus after a scheduler of the memory controller to drive the command bus with the signal pattern.

Abstract: REUT (Robust Electrical Unified Testing) for memory links is introduced which speeds testing, tool development, and debug. In addition it provides training hooks that have enough performance to be used by BIOS to train parameters and conditions that have not been possible with past implementations. Address pattern generation circuitry is also disclosed.

Abstract: According to one embodiment, a built-in self test (IBIST) architecture/methodology is disclosed. The IBIST provides for testing the functionality of an interconnect (such as a bus) between a transmitter and a receiver component. The IBIST architecture includes a pattern generator and a pattern checker. The pattern checker operates to compare a received plurality of bits (for the pattern generator) with a previously stored plurality of bits.

Abstract: A redundant network interface for ethernet devices is disclosed. The redundant network interface provides connections between one or more Ethernet devices and two or more independent networks. The redundant network interface device also tests an active primary Ethernet connection path, and when a failure or inactive path is detected, the redundant network interface device reroutes the messages to alternate communication path.

Abstract: An Ethernet interface device, and associated system and method, for reporting the status information data of Ethernet devices through common industrial protocols. The Ethernet interface device provides operational connections between one or more Ethernet devices and one or more independent networks. The Ethernet interface device also monitors an Ethernet connection path, and produces status data indicative of the operational status of the connection path and the devices connected along the path. This status data is received by the Ethernet interface device, where it is manipulated into a format recognizable by common industrial protocols.

Abstract: A multi-bit test value is loaded into a built-in latch of the IC component, and a pad of the component is selected for testing. A number of different sequences of test values are automatically generated, based on the stored test value, without scanning-in additional multi-bit values into the latch. A signal that is based on the different sequences of test values is driven into the selected pad and looped back. A difference between the test values and the looped back version of the test values is determined, while automatically adjusting driver and/or receiver characteristics to determine a margin of operation of on-chip I/O buffering for the selected pad.