Abstract: A structure and method for protecting exposed copper lines with chemisorbed, sacrificial, organic monolayers from further processing steps are herein described.

Abstract: Processing problems associated with porous low-k dielectric materials are often severe. Exposure of low-k materials to plasma during feature etching, ashing, and priming steps has deleterious consequences. For porous, silicon-based low-k dielectric materials, the plasma depletes a surface organic group, raising the dielectric constant of the material. In the worst case, the damaged dielectric is destroyed during the wet etch removal of the antireflective coating in the via-first copper dual-damascene integration scheme. This issue is addressed by exposing the dielectric to silane coupling agents at various stages of etching and cleaning. Chemical reactions with the silane coupling agent both replenish the dielectric surface organic group and passivate the dielectric surface relative to the surface of the antireflective coating.

Abstract: Fluidic self-assembly may be utilized to form a stack of two integrated circuits. The integrated circuits may include surface mount electrical connections and surface features that control the alignment between the integrated circuits. In particular, the contacts may be provided on one side of each integrated circuit and surface features may cause the integrated circuits to align with one another in an immersion fluid. The aligned circuits may join to form physical and electrical connections. The resulting structure may be a stack of two integrated circuits electrically coupled to one another.

Abstract: By exposing dielectrics to a strong electric field, anisotropic characteristics may be introduced into the dielectric. This may result in the dielectric having different dielectric constants in different directions. As integrated circuits scale, importance of line to line capacitance in one plane increases. Thus, in some embodiments, the dielectric constant of the oriented dielectric may be lower in the plane that controls line to line capacitance.