Abstract: There is a method for manufacturing wafers. In an example embodiment, the method employs a stepper with a reticle, lens, and stage movement parameters that comprise providing a set of intentionally-misaligned calibration wafers with predetermined input corrections, the input corrections accounting for linearity of response and interactions between the reticle, lens and stage movement parameters of the stepper. The stepper is calibrated by using the predetermined input corrections from the set of intentionally misaligned calibration wafers. Using the calibrated stepper, aligned patterns on the wafers are printed.

Abstract: A method for improving substrate alignment on a stepper comprises imposing predetermined corrections on each of a plurality of substrates, a different set of corrections for each substrate. The actual corrections occurring on the substrates are measured and mathematically processed to produce a matrix and a plurality of equations. The equations are resolved to provide correct corrections for accurate alignment.

Abstract: A method for improving substrate alignment on a stepper comprises imposing predetermined corrections on each of a plurality of substrates, a different set of corrections for each substrate. The actual corrections occurring on the substrates are measured and mathematically processed to produce a matrix and a plurality of equations. The equations are resolved to provide correct corrections for accurate alignment.

Abstract: The present invention provides an apparatus and a method for compensating critical dimension deviations across a photomask. In this method, a photomask is partitioned into a plurality of regions. A critical dimension is then measured for each of the regions in the photomask. Based on the measured critical dimensions, a deviation map is generated to map deviation of the critical dimension from a target dimension for each of the regions in the photomask. From the deviation map, an amount of actinic radiation needed to be attenuated to compensate for the critical dimension deviation from the target dimension is determined for each of the regions of the photomask. Based on the determined attenuation amount of actinic radiation, the transmission of the actinic radiation through each of the regions in the photomask is attenuated such that the critical dimension deviation is compensated to the target dimension for each of the regions in the photomask.

Abstract: There is a method for manufacturing wafers. In an example embodiment, the method employs a stepper with a reticle, lens, and stage movement parameters that comprise providing a set of intentionally-misaligned calibration wafers with predetermined input corrections, the input corrections accounting for linearity of response and interactions between the reticle, lens and stage movement parameters of the stepper. The stepper is calibrated by using the predetermined input corrections from the set of intentionally misaligned calibration wafers. Using the calibrated stepper, aligned patterns on the wafers are printed.

Abstract: The present invention provides an apparatus and a method for forming a photoresist pattern with a target critical dimension on an exposure field on a semiconductor wafer. The apparatus includes a light source, a lens, and a filter. The light source is adapted to generate actinic radiation for illuminating a photomask pattern onto the exposure field on the semiconductor wafer. The lens is arranged to focus the actinic radiation from the light source. The filter has a substrate that is transparent to the actinic radiation with the substrate being partitioned into a plurality of regions. One or more regions in the substrate is implanted with a dopant species adapted to absorb the actinic radiation from the lens to increase the critical dimension of the one or more regions to the target critical dimension.

Abstract: A method for improving substrate alignment on a stepper comprises imposing predetermined corrections on each of a plurality of substrates, a different set of corrections for each substrate. The actual corrections occurring on the substrates are measured and mathematically processed to produce a matrix and a plurality of equations. The equations are resolved to provide correct corrections for accurate alignment.

Abstract: The present invention provides an apparatus and a method for compensating critical dimension deviations across a photomask. In this method, a photomask is partitioned into a plurality of regions. A critical dimension is then measured for each of the regions in the photomask. Based on the measured critical dimensions, a deviation map is generated to map deviation of the critical dimension from a target dimension for each of the regions in the photomask. From the deviation map, an amount of actinic radiation needed to be attenuated to compensate for the critical dimension deviation from the target dimension is determined for each of the regions of the photomask. Based on the determined attenuation amount of actinic radiation, the transmission of the actinic radiation through each of the regions in the photomask is attenuated such that the critical dimension deviation is compensated to the target dimension for each of the regions in the photomask.

Abstract: A method for improving substrate alignment on a stepper comprises imposing predetermined corrections on each of a plurality of substrates, a different set of corrections for each substrate. The actual corrections occurring on the substrates are measured and mathematically processed to produce a matrix and a plurality of equations. The equations are resolved to provide correct corrections for accurate alignment.

Abstract: A method of adaptive sampling for accurate computer model building. The present invention is used in conjunction with a computer system to build models of responses, functions, and the like, that produce a given output for a given input(s). One embodiment in accordance with the present invention includes a computer system, software instructions, and a function to be modeled. The present embodiment directs the computer system to generate a set of equidistant data points for the function based on an input value. The present embodiment directs the computer to use a modeling curve to generate a set of prediction data points based on the odd positioned data points of the equidistant data points. The present embodiment directs the computer to determine whether the locations of the predicted data points satisfy a predetermined convergence criterion with respect to the determined locations of the even positioned data points of the equidistant data points.

Abstract: A method and system for measuring the thickness of a patterned film. In one embodiment, a first patterned film is impinged with electromagnetic radiation having a wavelength which varies within a given wavelength range. The electromagnetic radiation reflected from the first patterned film is measured. The thickness of the first patterned film is then measured using thickness measuring equipment. The determined thickness of the first patterned film is then correlated with the measured reflectance of the electromagnetic radiation from the first patterned film. A second patterned film is then impinged with electromagnetic radiation having a wavelength which varies within the given wavelength range. The electromagnetic radiation reflected from the second patterned film is measured. The present invention uses the previously determined correlation to determine the thickness of the second patterned film.

Abstract: A method and system for measuring the thickness of a patterned film. In one embodiment, a first patterned film is impinged with electromagnetic radiation having a wavelength which varies within a given wavelength range. The electromagnetic radiation reflected from the first patterned film is measured. The thickness of the first patterned film is then measured using thickness measuring equipment. The determined thickness of the first patterned film is then correlated with the measured reflectance of the electromagnetic radiation from the first patterned film. A second patterned film is then impinged with electromagnetic radiation having a wavelength which varies within the given wavelength range. The electromagnetic radiation reflected from the second patterned film is measured. The present invention uses the previously determined correlation to determine the thickness of the second patterned film.

Abstract: A particle removal wafer including ridges defining recessed areas and sticky material placed in these recessed areas can be run through wafer processing equipment. The particle removal wafer can remove particles that would otherwise adhere to the backs of wafers run through this equipment. Particles adhering to the backs of wafers are a problem in the photolithographic steps. These particles cause the focus of the photolithographic system to be off and thus can cause fatal errors. By removing the particles which could adhere to the backs of wafers from the wafer fabrication equipment, the accuracy of the photolithographic process can be improved.

Abstract: A method and arrangement for characterizing features of a patterned material on an underlying layer is disclosed. According to the method, the patterned material is subjected to radiation including a range of wavelengths such that the patterned material absorbs more radiation than the underlying layer, and the underlying layer reflects more radiation than the patterned material. Zeroth order reflected radiation is measured and the reflectance measurement is expressed as a spectrum of the intensity of the reflected radiation as a function of the wavelength of the reflected radiation, or as an average reflectance over a range of wavelengths. The reflectance measurement can be correlated with features of the patterned material. An arrangement of equipment is disclosed for characterizing features of a patterned material according to the method.

Abstract: Etch baths having phosphoric acid, nitric acid and hydrofluoric acid and used to selectively remove silicon nitride or silicon with respect to silicon oxide have enhanced initial selectivity when silicon is added to the initial bath. The silicon may be added in the form of soluble silicon compounds such a hexafluorosilicic acid or ammonium fluorosilicate.

Abstract: High etch selectivity of both silicon nitride and silicon with respect to silicon oxide is obtained using an etch bath of phosphoric acid, hydrofluoric acid, and nitric acid. Minimal loading effects are observed and a long bath life is obtained by replenishing the hydroflouric and nitric acids.

Abstract: A semiconductor wafer 11 is mounted on an elongated member 18, one end of which is rotatable about a transverse axis (14), thereby to distribute a liquid on the upper surface of the wafer more evenly. In order to stabilize the rotation of the elongated member, a second elongated member is preferably attached end-to-end to the elongated member (18) and rotates with it. A counterweight (26) in the second elongated member moves during the rotation such that the distance between the wafer and the central axis and the distance between the center of the counterweight and the axis are substantially equal. The weight distribution is approximately symmetrical about the axis and the structure is dynamically stabilized. The counterweight and the wafer assembly may be moved during rotation by applying air pressure from a source (23) to pistons (13, 26) in the two elongated members.

Abstract: A semiconductor wafer 11 is mounted on an elongated member 18, one end of which is rotatable about a transverse axis (14), thereby to distribute a liquid on the upper surface of the wafer more evenly. In order to stabilize the rotation of the elongated member, a second elongated member is preferably attached end-to-end to the elongated member (18) and rotates with it. A counterweight (26) in the second elongated member moves during the rotation such that the distance between the wafer and the central axis and the distance between the center of the counterweight and the axis are substantially equal. The weight distribution is approximately symmetrical about the axis and the structure is dynamically stabilized. The counterweight and the wafer assembly may be moved during rotation by applying air pressure from a source (23) to pistons (13,26) in the two elongated member.

Abstract: An antireflection coating (16) for use with a photolithographic process comprises a layer of organic material that planarizes the surface upon which a photoresist layer (21) is deposited, is highly absorptive of deep ultraviolet actinic light, and can be plasma etched along with an underlying metal layer (11), thereby obviating the need for a separate step to remove the exposed antireflection coating prior to metal etch.

Abstract: A semiconductor wafer 11 is mounted on an elongated member 18, one end of which is rotatable about a transverse axis (14), thereby to distribute a liquid on the upper surface of the wafer more evenly. In order to stabilize the rotation of the elongated member, a second elongated member is preferably attached end-to-end to the elongated member (18) and rotates with it. A counterweight (26) in the second elongated member moves during the rotation such that the distance between the wafer and the central axis and the distance between the center of the counterweight and the axis are substantially equal. The weight distribution is approximately symmetrical about the axis and the structure is dynamically stabilized. The counterweight and the wafer assembly may be moved during rotation by applying air pressure from the source (23) to pistons (13,26) in the two elongated members.