Abstract: The present disclosure relates to detecting the use of fake voice command to activate microphones of smart devices. In one embodiment, sound characteristics associated with an audio signal from a microphone of smart device may be compared with other microphones of the smart device in order to detect fake voice commands. In another embodiment, sound characteristics associated with the audio signal from the microphone may be compared with a threshold range of stored sound characteristics in order to detect fake voice commands. In some embodiments, a controller may triangulate a position associated with a source of a sound in order to detect a fake voice command. In a further embodiment, a controller may verify that a user or associated electronic device are near a smart device to authorize a voice command.

Abstract: One or more radar sensors can be used to monitor patients in a variety of different environments and embodiments. In one embodiment, radar sensors can be used to monitor a patient's breathing, including monitoring of tidal volume, chest expansion distance, breathing rate, etc. In another embodiment, a patient position can be monitored in a patient bed, which can be used as feedback for control of bladders of a patient bed. Additional embodiments are described herein.

Abstract: Various implementations disclosed herein facilitate interactions with a user interface in 3D environment in which a user interface element is moved based on a user movement in a way that the user interface element appears to lag behind or follow a portion of the user (e.g., the user's fingertip). The user interface element may be moved in a way that it converges with and thus catches up to the portion of the user. Such convergence may be based on the speed of the movement of the portion of the user. No convergence may occur when the portion of the user is not moving or is moving below a threshold speed. When the portion of the user is moving (e.g., above a threshold speed), the user interface component may converge with the portion of the user and the rate of convergence may be increased with faster speeds.

Abstract: Suppressing a hand gesture upon detecting peripheral events on a peripheral device includes determining a first hand pose for a first hand a second hand pose for a second hand in response to a detected peripheral device peripheral event, determining, based on the first hand pose and the second hand pose, at least one hand of the first hand and the second hand in a peripheral use mode, detecting an input gesture from a hand of the at least one hand determined to be in the peripheral use mode, and rejecting the input gesture by a user input pipeline in accordance with the determination that the hand is in the peripheral use mode. The presence of a peripheral device is confirmed by activating a computer vision system in response to determining that a peripheral use condition is satisfied.

Abstract: In some embodiments, a computer system facilitates user input for displaying a selection refinement user interface object in an object within a three-dimensional environment, wherein the selection refinement user interface object indicates a location in the object at which the computer system performs a selection operation in response to further user input. In some embodiments, a computer system facilitates user input for activating a selection refinement mode in the three-dimensional environment during which an interaction point for a selection operation is movable based on movement of a hand of the user of the computer system.

Abstract: An indirect haptic device includes a substrate having a top surface and a bottom surface, and a plurality of haptic electrodes and a plurality of island electrodes arranged on the top surface. The device further includes a plurality of transmit electrodes and a plurality of receive electrodes arranged on the bottom surface, a position sensor, and a friction modulator. The device further includes a control device configured to apply bipolar electrical signals to the plurality of transmit electrodes to detect touch locations of a user's appendage and to modulate the friction between the user's appendage and the touch surface. Each of the plurality of haptic electrodes are substantially aligned with and capacitively coupled to a corresponding two of the plurality of transmit electrodes.

Abstract: Method for forming an integrated acoustic device. A thin film piezoelectric acoustic transducer is epitaxially formed on a host substrate and is then transferred to a functional target substrate wherein physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate.

Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

Abstract: A haptic interface unit may include an application in the operating system of a device in communication with a driver layer. A plurality of sensors and actuators may be in communication with the driver layer. The driver layer analyzes information from the sensors to generate an output signal based on an interaction model stored in the driver layer. The application updates the interaction model in the driver layer.

Abstract: Semiconductor devices having conductive floating gates superimposed on and/or embedded within a conducting channel for managing electromagnetic radiation in the device. The conductive floating gates can comprise a one- or two-dimensional array of asymmetric structures superimposed on and/or embedded within the conducting channel. The conductive floating gates can comprise Nb2N, Ta2N, TaNx, NbNx, WNx, or MoNx or any transition metal nitride compound. The device can include a plurality of conductive floating gates on a rear surface of a barrier layer, wherein each of the conductive floating gates might be separately biased for individual tuning. Antennas for capturing or emitting THz or sub-THz radiation could be attached to the device contacts. Terahertz or infrared radiation could be manipulated by driving a current through the conducting channel into a plasmonic boom regime. Additional manipulation of the electromagnetic radiation could be achieved by having antennas with an appropriate phase angle shift.

Abstract: A conductive solder pad for a ball grid array (BGA) includes a concave edge to accommodate a via that exits a substrate at a position at the surface of the substrate that is offset from the solder pad. The offset arrangement of the via and solder pad allow for differential thermal expansion of the substrate material and the via material with reduced risk of cracking or fracturing the solder joint. The concave edge of the solder pad provides a gap from the via to avoid unintended electrical connections while maintaining the solder-joint pitch of the BGA.

Abstract: An indirect haptic device includes a substrate having a top surface and a bottom surface, and a plurality of haptic electrodes and a plurality of island electrodes arranged on the top surface. The device further includes a plurality of transmit electrodes and a plurality of receive electrodes arranged on the bottom surface, a position sensor, and a friction modulator. The device further includes a control device configured to apply bipolar electrical signals to the plurality of transmit electrodes to detect touch locations of a user's appendage and to modulate the friction between the user's appendage and the touch surface. Each of the plurality of haptic electrodes are substantially aligned with and capacitively coupled to a corresponding two of the plurality of transmit electrodes.

Abstract: An indirect haptic device includes a substrate having a top surface and a bottom surface, and a plurality of haptic electrodes and a plurality of island electrodes arranged on the top surface. The device further includes a plurality of transmit electrodes and a plurality of receive electrodes arranged on the bottom surface, a position sensor, and a friction modulator. The device further includes a control device configured to apply bipolar electrical signals to the plurality of transmit electrodes to detect touch locations of a user's appendage and to modulate the friction between the user's appendage and the touch surface. Each of the plurality of haptic electrodes are substantially aligned with and capacitively coupled to a corresponding two of the plurality of transmit electrodes.

Abstract: The present invention provides a composition comprising nanoparticles of prodrugs of certain pharmaceutically active agents, wherein the nanoparticles of prodrugs are dispersed within a carrier material. The present invention further provides processes for the making of the same.

Abstract: A haptic interface unit may include an application in the operating system of a device in communication with a driver layer. A plurality of sensors and actuators may be in communication with the driver layer. The driver layer analyzes information from the sensors to generate an output signal based on an interaction model stored in the driver layer. The application updates the interaction model in the driver layer.

Abstract: A haptic interface unit may include an application in the operating system of a device in communication with a driver layer. A plurality of sensors and actuators may be in communication with the driver layer. The driver layer analyzes information from the sensors to generate an output signal based on an interaction model stored in the driver layer. The application updates the interaction model in the driver layer.

Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

Abstract: Semiconductor devices having conductive floating gates superimposed on and/or embedded within a conducting channel for managing electromagnetic radiation in the device. The conductive floating gates can comprise a one- or two-dimensional array of asymmetric structures superimposed on and/or embedded within the conducting channel. The conductive floating gates can comprise Nb2N, Ta2N, TaNx, NbNx, WNx, or MoNx or any transition metal nitride compound. The device can include a plurality of conductive floating gates on a rear surface of a barrier layer, wherein each of the conductive floating gates might be separately biased for individual tuning. Antennas for capturing or emitting THz or sub-THz radiation could be attached to the device contacts. Terahertz or infrared radiation could be manipulated by driving a current through the conducting channel into a plasmonic boom regime. Additional manipulation of the electromagnetic radiation could be achieved by having antennas with an appropriate phase angle shift.

Abstract: Solid-state devices including a layer of a superconductor material epitaxially grown on a crystalline high thermal conductivity substrate, the superconductor material being one of TiNx, ZrNx, HfNx, VNx, NbNx, TaNx, MoNx, WNx, or alloys thereof, and one or more layers of a semiconducting or insulating or metallic material epitaxially grown on the layer of superconductor material, the semiconducting or insulating material being one of a Group III N material or alloys thereof or a Group 4b N material or SiC or ScN or alloys thereof.

Abstract: An indirect haptic device includes a substrate having a top surface and a bottom surface, and a plurality of haptic electrodes and a plurality of island electrodes arranged on the top surface. The device further includes a plurality of transmit electrodes and a plurality of receive electrodes arranged on the bottom surface, a position sensor, and a friction modulator. The device further includes a control device configured to apply bipolar electrical signals to the plurality of transmit electrodes to detect touch locations of a user's appendage and to modulate the friction between the user's appendage and the touch surface. Each of the plurality of haptic electrodes are substantially aligned with and capacitively coupled to a corresponding two of the plurality of transmit electrodes.