Abstract: Independent multi-plane commands for non-volatile memory devices are described. In one example, a three-dimensional (3D) NAND memory device includes 3D NAND dies, each die including multiple planes of memory cells. The device includes input/output (I/O) circuitry to receive multiple commands from a host, each of the received commands to access one of the planes. The device includes logic (which can be implemented with, for example, an ASIC controller, firmware, or both) to queue the commands in separate queues for each of the planes based on a target plane of each of the commands. The logic issues the commands to their target planes independent of other planes' status, and tracks completion status of the commands independently for each plane.

Abstract: An embodiment of a semiconductor apparatus may include technology to detect a collision for a read request of an electronic storage device, and read data for the read request directly from a transfer buffer if the collision is detected. Other embodiments are disclosed and claimed.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: An embodiment of a semiconductor apparatus may include technology to determine a differentiator associated with an access request for two or more memory devices, and set a target order for the two or more memory devices based on the differentiator. Other embodiments are disclosed and claimed.

Abstract: A reduction in Quality of Service (QoS) latency for host read commands in a power limited operation mode in a storage device is provided. A priority level is assigned to a host command using weighted round robin arbitration. Power resources are allocated based on the priority levels assigned to host commands to minimize host read command latency in the power limited operation mode.

Abstract: A refreshing method is described. The method includes recognizing a set of blocks of a non-volatile memory for refreshing and then refreshing a subset of the data within the blocks, where, invalid data within the blocks is not recognized for refreshing and a group of blocks whose oldest data has not aged for a pre-set time period is not recognized for refreshing.

Abstract: Technology to dynamically modulate read granularity of a memory device. A computing system may include a controller and one or more memory devices coupled to the controller, the one or more memory devices including instructions, which when executed by the controller, may cause the computing system to determine whether a read to a memory device satisfies a sub-page read policy. In addition, the instructions, when executed, may cause the computing system to issue a sub-page read command to retrieve data from the memory device at sub-page granularity when the read satisfies the sub-page read policy. Moreover, the instructions, when executed, may cause the computing system to issue a full-page read command to retrieve the data at full-page granularity when the read does not satisfy the sub-page read policy or when a read for a segment of sequentially stored data does not satisfy the sub-page read policy.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: Methods and apparatus related to a rotated planar XOR scheme for Varied-Sector-Size (VSS) enablement in flat indirection systems are described. In one embodiment, non-volatile memory stores user data in a first set of plurality of planes across a plurality of dies and parity data corresponding to the user data in a second set of plurality of planes. The user data in the first set of the plurality of planes across the plurality of dies and the second set of the plurality of planes is rotated to match a mapping of the parity data. Other embodiments are also disclosed and claimed.

Abstract: Provided are a method and apparatus for remapping logical to physical addresses for a non-volatile memory having dies. Bands extend through the dies and planes in the dies extending through the bands define addressable blocks. A first remapping of a logical-to-physical mapping is performed by remapping logical addresses of blocks in a first end of the bands that map to defective physical blocks to map to good physical blocks at a second end of the bands. After performing the first remapping, a second remapping of the logical-to-physical mapping is performed by remapping logical addresses in the second end of bands that map to defective blocks to map to good physical blocks in the first end of bands.

Abstract: Methods and apparatus related to a mechanism for quickly adapting garbage collection resource allocation for an incoming I/O (Input/Output) workload are described. In one embodiment, non-volatile memory stores data corresponding to a first workload and a second workload. Allocation of one or more resources in the non-volatile memory is determined based at least in part on a determination of an average validity of one or more blocks, where the one or more candidate bands are to be processed during operation of the first workload or the second workload. Other embodiments are also disclosed and claimed.

Abstract: Provided are an apparatus, memory controller and method for performing a block erase operation with respect to a non-volatile memory. A command is generated to perform a portion of the block erase operation. At least one read or write operation is performed after executing the command. An additional instance of the command is executed in response to determining that the block erase operation did not complete after performing the at least one read or write operation.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: Provided are a method and apparatus for remapping logical to physical addresses for a non-volatile memory having dies. Bands extend through the dies and planes in the dies extending through the bands define addressable blocks. A first remapping of a logical-to-physical mapping is performed by remapping logical addresses of blocks in a first end of the bands that map to defective physical blocks to map to good physical blocks at a second end of the bands. After performing the first remapping, a second remapping of the logical-to-physical mapping is performed by remapping logical addresses in the second end of bands that map to defective blocks to map to good physical blocks in the first end of bands.

Abstract: Provided are an apparatus, memory controller and method for performing a block erase operation with respect to a non-volatile memory. A command is generated to perform a portion of the block erase operation. At least one read or write operation is performed after executing the command. An additional instance of the command is executed in response to determining that the block erase operation did not complete after performing the at least one read or write operation.

Abstract: A page data (e.g., upper page data) received from a host is stored in a transfer buffer of a controller of a solid state drive. Another page data (e.g., lower page data) is read from a non-volatile memory (e.g., a NAND memory) to store in the transfer buffer as an error corrected page data. The error corrected page data and the page data are written to the non-volatile memory. In additional embodiments, a controller loads a page data (e.g., upper page data) received from the host in one or more NAND page buffers. The controller reads another page data (e.g., lower page data) from a NAND memory to store in a transfer buffer as an error corrected page data. The error corrected page data stored in the transfer buffer is loaded to the one or more NAND page buffers.

Abstract: Computer processor hardware receives notification that data stored in a region of storage cells in a non-volatile memory system stores invalid data. In response to the notification, the computer processor hardware marks the region as storing invalid data. The computer processor hardware controls the magnitude of erase dwell time (i.e., the amount of time that one or more cells are set to an erased state) associated with overwriting of the invalid data in the storage cells with replacement data. For example, to re-program respective storage cells, the data manager must erase the storage cells and then program the storage cells with replacement data. The data management logic can control the erase dwell time to be less than a threshold time value to enhance a life of the non-volatile memory system.

Abstract: The present disclosure is directed to gradual context saving in a data storage device. An example data storage device may comprise at least a non-volatile memory and a control module. The control module may cause context data to be gradually saved to the non-volatile memory based on monitoring write activity to the nonvolatile memory, wherein the context data may correspond to a current state of the data storage device. The control module may cause context data to be saved based on a budget ratio. For example, a budget ratio may compare an amount of total budget consumed (e.g., based a capacity of the data storage device, an amount of data stored in the data storage device, a target time-to-ready for the data storage device, etc.) to an amount of total context data that has already been written to the non-volatile memory.

Abstract: Methods and apparatus related to a mechanism for quickly adapting garbage collection resource allocation for an incoming I/O (Input/Output) workload are described. In one embodiment, non-volatile memory stores data corresponding to a first workload and a second workload. Allocation of one or more resources in the non-volatile memory is determined based at least in part on a determination of an average validity of one or more blocks, where the one or more candidate bands are to be processed during operation of the first workload or the second workload. Other embodiments are also disclosed and claimed.

Abstract: Apparatus, systems, and methods to implement read operations in nonvolatile memory devices are described. In one example, a controller comprises logic to receive a first read request from a host device, place the first read request in a read queue comprising a plurality of read requests directed to the nonvolatile memory, determine a first target die and a first target plane in the nonvolatile memory for the first read request and combine the first read request with at least a second read request in the read queue to form a combined read request, wherein the second read request comprise a second target die, which is the same as the first target die, and a second target plane which is different from the first target plane. Other examples are also disclosed and claimed.